A 3D-Integrated 56 Gb/s NRZ/PAM4 Reconfigurable Segmented Mach-Zehnder Modulator-Based Si-Photonics Transmitter

2018 ◽  
Author(s):  
Cheng Li ◽  
Kunzhi Yu ◽  
Jinsoo Rhim ◽  
Kehan Zhu ◽  
Nan Qi ◽  
...  
Keyword(s):  
Si Photonics ◽  
Mach Zehnder Modulator

Heterogeneously Integrated Membrane DFB Laser and Si Mach-Zehnder Modulator on Si Photonics Platform

2020 ◽  
Author(s):  
Takuma Aihara ◽  
Tatsurou Hiraki ◽  
Takuro Fujii ◽  
Koji Takeda ◽  
Tai Tsuchizawa ◽  
...  
Keyword(s):  
Si Photonics ◽  
Dfb Laser ◽  
Mach Zehnder Modulator

Mach-Zehnder Modulator using Membrane InGaAsP Phase Shifters and SOAs inside Interferometer Arms on Si Photonics Platform

2020 ◽  
Author(s):  
Takuma Aihara ◽  
Tatsurou Hiraki ◽  
Takuro Fujii ◽  
Koji Takeda ◽  
Takaaki Kakitsuka ◽  
...  
Keyword(s):  
Phase Shifters ◽  
Si Photonics ◽  
Mach Zehnder Modulator

scholarly journals Integration of high-efficiency Mach-Zehnder modulator with DFB laser using membrane InP-based devices on Si photonics platform

2020 ◽  
Author(s):  
Tatsurou Hiraki ◽  
Takuma Aihara ◽  
Takuro Fujii ◽  
Koji Takeda ◽  
Yoshiho Maeda ◽  
...  
Keyword(s):  
High Efficiency ◽  
Si Photonics ◽  
Dfb Laser ◽  
Mach Zehnder Modulator

Generation of Millimeter Waves with Fine Frequency Tunability Using Mach-Zehnder-Modulator-Based Flat Comb Generator

2013 ◽  
Vol E96.C (2) ◽  
pp. 192-196 ◽  
Author(s):  
Isao MOROHASHI ◽  
Yoshihisa IRIMAJIRI ◽  
Takahide SAKAMOTO ◽  
Tetsuya KAWANISHI ◽  
Motoaki YASUI ◽  
...  
Keyword(s):  
Millimeter Waves ◽  
Frequency Tunability ◽  
Mach Zehnder Modulator

scholarly journals Performance analysis of carrier depletion silicon PIN phase shifter

2020 ◽  
Vol 0 (0) ◽  
Author(s):  
Jesuwanth Sugesh Ramesh Gabriel ◽  
Sivasubramanian Arunagiri
Keyword(s):  
Performance Analysis ◽  
Bit Error Rate ◽  
Error Rate ◽  
Phase Shifter ◽  
Extinction Ratio ◽  
Fibre Length ◽  
Data Rate ◽  
Operating Voltage ◽  
Data Centre ◽  
Mach Zehnder Modulator

AbstractIn this paper, we report the performance of a carrier depletion Silicon PIN phase shifter with over layer of 130 nm. It is observed that an optimum intrinsic gap of 250 nm for a device length of 5 mm at 2 V, resulted in Extinction Ratio (ER) of 23.41 dB and Bit Error Rate (BER) of 1.00 × 10−7 is obtained for 50 Gbps. The phase shifter is also designed for length 2 mm with an intrinsic gap of 100 nm at an operating voltage <4 V. The study also reveals that the proposed design for Mach-Zehnder modulator operating at a data rate of 100 Gbps for the concentration of P = 7 × 1017 cm−3 and N = 5 × 1017 cm−3 gives better BER and phase performance. The proposed design was also analysed in an intra-data centre communication setup of fibre length 15 km.

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