A 40 Gb/s Optical Receiver in 80-nm CMOS for Short-Distance High-Density Interconnects

Author(s):  
C. Kromer ◽  
G. Sialm ◽  
D. Erni ◽  
H. Jackel ◽  
T. Morf ◽  
...  
2013 ◽  
Vol 78 (1) ◽  
pp. 43-51 ◽  
Author(s):  
Toru Yazaki ◽  
Toshiaki Takai ◽  
Norio Chujo ◽  
Naoki Matsushima ◽  
Kenichi Ohhata

1992 ◽  
Vol 258 ◽  
Author(s):  
W. D. Dozier ◽  
K. W. Herwig ◽  
R. Shinar ◽  
H. Jia ◽  
J. Shinar

ABSTRACTPreliminary results of neutron reflectometry (NR) measurements on if sputter-deposited a-Si:H/a-Si:D bilayers indicate that this technique may be used to monitor H and D motions over distances of ≈ 10 to 200 Å with a nominal resolution of 5 – 10 Å. In studying rf sputter-deposited thin films containing a high density of microvoids annealed at 270 C, we found that the hydrogen diffused a distance of only ≈ 100 Å. Further annealing at 270 and 280 C produced no additional motion. This result is consistent with a model of this system in which the hydrogen is trapped in microvoids after moving a relatively short distance.


2019 ◽  
Vol 27 (4) ◽  
pp. 553-564 ◽  
Author(s):  
Ernest Boakye-Dankwa ◽  
Anthony Barnett ◽  
Nancy A. Pachana ◽  
Gavin Turrell ◽  
Ester Cerin

To examine associations between perceived destination accessibility within different distances from home and self-reported overall amounts of walking for different purposes among older adults (aged ≥ 65 years) in Brisbane, Australia (N = 793) and Hong Kong, China (N = 484). Perceived neighborhood destination accessibility types were derived from latent class analysis using comparable measures of perceived distance to 12 destinations from epidemiological studies in the two cities. Associations of perceived destination accessibility with measures of within-neighborhood walking were also estimated in Hong Kong participants. Better perceived destination accessibility was positively associated with the likelihood of walking in Brisbane participants only. Perceived destination accessibility within a short distance from home (5-min walk) was negatively related to the amount of within-neighborhood walking for transport in Hong Kong residents who walked. Our findings suggest that providing moderate-to-high, but not extreme, levels of destination accessibility may be optimal for the promotion of walking in older community dwellers.


Author(s):  
Tom Middlebrook ◽  
Timothy K. Perttula

The Henry M. site (41NA60) is an early historic (post-A.D. 1680) Allen phase farmstead on a natural rise in the Bayou Loco floodplain in western Nacogdoches County in East Texas. Bayou Loco, a relatively small stream, flows south a few miles to its confluence with the Angelina River. The dam for Lake Nacogdoches on the bayou is about 1.7 miles to the north. Construction of Lake Nacogdoches inundated a number of contemporaneous Allen phase farmsteads- some of which were the scene of 1970s excavations-including 41NA18. The Henry M. site in the mid-1980s. (41NA21), Iron Rock (41NA22), Loco Bottoms (41NA23), and Deshazo (41NA27). The Bayou Loco valley has a high density of historic Caddo settlements. The natural rise that the Henry M. site is located on was in an 8 acre pasture. This rise is about 50 min diameter, ca. 1 min height, and south a short distance from an eastward-flowing spring-fed tributary to Bayou Loco. The rise has loamy alluvial Marietta soils. The main part of the Henry M. site has a ca. 10 m diameter midden deposit near the center of the natural rise. The midden deposit contains extensive amounts of Caddo ceramic sherds and many well-preserved animal bones, some mussel shell, and other artifactual debris.


Author(s):  
S. McKernan ◽  
C. B. Carter ◽  
D. Bour ◽  
J. R. Shealy

The growth of ternary III-V semiconductors by organo-metallic vapor phase epitaxy (OMVPE) is widely practiced. It has been generally assumed that the resulting structure is the same as that of the corresponding binary semiconductors, but with the two different cation or anion species randomly distributed on their appropriate sublattice sites. Recently several different ternary semiconductors including AlxGa1-xAs, Gaxln-1-xAs and Gaxln1-xP1-6 have been observed in ordered states. A common feature of these ordered compounds is that they contain a relatively high density of defects. This is evident in electron diffraction patterns from these materials where streaks, which are typically parallel to the growth direction, are associated with the extra reflections arising from the ordering. However, where the (Ga,ln)P epilayer is reasonably well ordered the streaking is extremely faint, and the intensity of the ordered spot at 1/2(111) is much greater than that at 1/2(111). In these cases it is possible to image relatively clearly many of the defects found in the ordered structure.


Author(s):  
L. Mulestagno ◽  
J.C. Holzer ◽  
P. Fraundorf

Due to the wealth of information, both analytical and structural that can be obtained from it TEM always has been a favorite tool for the analysis of process-induced defects in semiconductor wafers. The only major disadvantage has always been, that the volume under study in the TEM is relatively small, making it difficult to locate low density defects, and sample preparation is a somewhat lengthy procedure. This problem has been somewhat alleviated by the availability of efficient low angle milling.Using a PIPS® variable angle ion -mill, manufactured by Gatan, we have been consistently obtaining planar specimens with a high quality thin area in excess of 5 × 104 μm2 in about half an hour (milling time), which has made it possible to locate defects at lower densities, or, for defects of relatively high density, obtain information which is statistically more significant (table 1).


Author(s):  
Evelyn R. Ackerman ◽  
Gary D. Burnett

Advancements in state of the art high density Head/Disk retrieval systems has increased the demand for sophisticated failure analysis methods. From 1968 to 1974 the emphasis was on the number of tracks per inch. (TPI) ranging from 100 to 400 as summarized in Table 1. This emphasis shifted with the increase in densities to include the number of bits per inch (BPI). A bit is formed by magnetizing the Fe203 particles of the media in one direction and allowing magnetic heads to recognize specific data patterns. From 1977 to 1986 the tracks per inch increased from 470 to 1400 corresponding to an increase from 6300 to 10,800 bits per inch respectively. Due to the reduction in the bit and track sizes, build and operating environments of systems have become critical factors in media reliability.Using the Ferrofluid pattern developing technique, the scanning electron microscope can be a valuable diagnostic tool in the examination of failure sites on disks.


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