Copper Metallization for Power Devices

2007 ◽  
Author(s):  
W. Robl ◽  
M. Melzl ◽  
B. Weidgans ◽  
R. Hofmann ◽  
M. Stecher
Keyword(s):  
Copper Metallization ◽  
Power Devices

Reliability aspects of copper metallization and interconnect technology for power devices

2016 ◽  
Vol 64 ◽  
pp. 393-402 ◽  
Author(s):  
Frank Hille ◽  
Roman Roth ◽  
Carsten Schäffer ◽  
Holger Schulze ◽  
Nicolas Heuck ◽  
...  
Keyword(s):  
Copper Metallization ◽  
Power Devices ◽  
Interconnect Technology

Tungsten Carbide as a Diffusion Barrier on Silicon Nitride Active- Metal-Brazed Substrates for Silicon Carbide Power Devices

2009 ◽  
Vol 131 (3) ◽  
Author(s):  
H. A. Mustain ◽  
William D. Brown ◽  
Simon S. Ang
Keyword(s):  
Silicon Carbide ◽  
Silicon Nitride ◽  
Tungsten Carbide ◽  
Diffusion Barrier ◽  
Coefficient Of Thermal Expansion ◽  
Depth Profiling ◽  
Transient Liquid Phase ◽  
Copper Metallization ◽  
Phase Identification ◽  
Power Devices

Recently, silicon nitride (Si3N4) has been receiving renewed attention because of its potential use as a substrate material for packaging of silicon carbide (SiC) power devices for high temperature applications. It is an attractive material for this application because it has moderate thermal conductivity and a low coefficient of thermal expansion, which is close to that of SiC. Materials that show promise for use as a diffusion barrier on Si3N4 substrate for bonding SiC devices to a Si3N4 substrate are refractory metals such as titanium (Ti), molybdenum (Mo), tungsten (W), and their alloys. Tungsten carbide (WC) shows promise as a diffusion barrier for bonding these devices to copper metallization on Si3N4 substrates. This paper presents the results of an investigation of a metallization stack (Si3N4/Cu/WC/Ti/Pt/Ti/Au) used to bond SiC dice to Si3N4 substrates. The dice were bonded using transient liquid phase bonding. Samples were characterized using X-ray diffraction for phase identification and Auger electron spectroscopy for depth profiling of the elemental composition of the metallization stack in the as-deposited state, and immediately following annealing. The metallization remained stable following subjection to a temperature of 400°C for 100 h in air.

Performance of vertical power devices with contact-level copper metallization

1999 ◽  
Vol 348 (1-2) ◽  
pp. 14-21 ◽  
Author(s):  
Jeffrey Cook ◽  
Misbahul Azam ◽  
Pak Leung ◽  
Melissa Grupen
Keyword(s):  
Copper Metallization ◽  
Power Devices

Last Metal Copper Metallization for Power Devices

2008 ◽  
Vol 21 (3) ◽  
pp. 358-362 ◽  
Author(s):  
W. Robl ◽  
M. Melzl ◽  
B. Weidgans ◽  
R. Hofmann ◽  
M. Stecher
Keyword(s):  
Copper Metallization ◽  
Power Devices

Evolution of the microstructure of Cu(Ti)/SiO2 layers annealed in NH3

1995 ◽  
Vol 53 ◽  
pp. 452-453
Author(s):  
J. Liu ◽  
N. D. Theodore ◽  
D. Adams ◽  
S. Russell ◽  
T. L. Alford ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Titanium Nitride ◽  
Large Scale ◽  
Standard Procedure ◽  
Alloy Film ◽  
Electron Beam Evaporation ◽  
Copper Metallization ◽  
Nominal Composition ◽  
Ti Alloy ◽  
Thermally Grown

Copper-based metallization has recently attracted extensive research because of its potential application in ultra-large-scale integration (ULSI) of semiconductor devices. The feasibility of copper metallization is, however, limited due to its thermal stability issues. In order to utilize copper in metallization systems diffusion barriers such as titanium nitride and other refractory materials, have been employed to enhance the thermal stability of copper. Titanium nitride layers can be formed by annealing Cu(Ti) alloy film evaporated on thermally grown SiO2 substrates in an ammonia ambient. We report here the microstructural evolution of Cu(Ti)/SiO2 layers during annealing in NH3 flowing ambient.The Cu(Ti) films used in this experiment were prepared by electron beam evaporation onto thermally grown SiO2 substrates. The nominal composition of the Cu(Ti) alloy was Cu73Ti27. Thermal treatments were conducted in NH3 flowing ambient for 30 minutes at temperatures ranging from 450°C to 650°C. Cross-section TEM specimens were prepared by the standard procedure.

Nanoprobing Application on Characterization of 6T-SRAM Single Bit Failures with Different Gox Breakdown Defect

2006 ◽  
Author(s):  
Cheng-Piao Lin ◽  
Chin-Hsin Tang ◽  
Cheng-Hsu Wu ◽  
Cheng-Chun Ting
Keyword(s):  
Copper Metallization ◽  
Physical Analysis ◽  
Electrical Characteristics ◽  
Gate Leakage Current ◽  
Data Retention ◽  
Simulation Data ◽  
Failure Data ◽  
Dual Gate ◽  
Soft Breakdown

Abstract This paper analyzes several SRAM failures using nano-probing technique. Three SRAM single bit failures with different kinds of Gox breakdown defects analyzed are gross function single bit failure, data retention single bit failure, and special data retention single bit failure. The electrical characteristics of discrete 6T-SRAM cells with soft breakdown are discussed and correlated to evidences obtained from physical analysis. The paper also verifies many previously published simulation data. It utilizes a 6T-SRAM vehicle consisting of a large number of SRAM cells fabricated by deep sub-micron, dual gate, and copper metallization processes. The data obtained from this paper indicates that Gox breakdown location within NMOS pull-down device has larger a impact on SRAM stability than magnitude of gate leakage current, which agrees with previously published simulation data.

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