Trimming of hard-masks by gaseous Chemical Oxide Removal (COR) for sub-10 nm gates/fins, for gate length control and for embedded logic

2004 ◽  
Author(s):  
W.C. Natzle ◽  
D. Horak ◽  
S. Deshpande ◽  
Chien-Fan Yu ◽  
J.C. Liu ◽  
...  
Keyword(s):  
Gate Length ◽  
Oxide Removal ◽  
Gaseous Chemical

RMG Patterning by Digital Wet Etching of Polycrystalline Metal Films

2018 ◽  
Vol 282 ◽  
pp. 132-138
Author(s):  
Yusuke Oniki ◽  
Guy Vereecke ◽  
Eugenio Dentoni Litta ◽  
Lars-Ake Ragnarsson ◽  
Harold Dekkers ◽  
...  
Keyword(s):  
Thin Films ◽  
Metal Films ◽  
Wet Etching ◽  
Oxide Growth ◽  
Gate Length ◽  
Metal Gate ◽  
Polycrystalline Metal ◽  
Metal Thin Films ◽  
Tin Films ◽  
Oxide Removal

A self-limiting wet etching of metal thin films has been developed for the replacement metal gate patterning in advanced logic devices, which will have aggressively scaled gate length and fin pitches. A uniform and highly selective wet etching of polycrystalline TiN films is demonstrated by a diffusion-limiting oxide growth on the metal surfaces as well as a subsequent highly selective oxide removal.

OPTIMISATION OF SAND CASTING PROCESS FOR IMPELLER USING TAGUCHI METHODOLOGY

2020 ◽  
Vol XVII (2) ◽  
pp. 23-33
Author(s):  
Faisal Hafeez ◽  
Salman Hussain ◽  
Wasim Ahmad ◽  
Mirza Jahanzaib
Keyword(s):  
Surface Roughness ◽  
Surface Defects ◽  
A356 Alloy ◽  
Casting Process ◽  
Sand Casting ◽  
Gate Length ◽  
Taguchi Methodology ◽  
Confirmatory Tests ◽  
Binder Ratio ◽  
Response Measures

This paper presents the study to investigate the effects of binder ratio, in-gate length and pouring height on hardness, surface roughness and casting defects of sand casting process. Taguchi methodology with L9 orthogonal array was employed to design the experimentation. Sand casting of six blade impeller using A356 alloy was performed and empirical models for all the above response measures were formulated. Confirmatory tests and analysis of variance results confirmed the accuracy of the model. Binder ratio was found to be the most significant parameter affecting casting surface defects and surface roughness. This was followed by pouring height and in-gate length.

Analysis of Hot Carrier Injection According to Gate Length

2019 ◽  
Vol 19 (10) ◽  
pp. 6746-6749 ◽  
Author(s):  
Taejin Jang ◽  
Myung-Hyun Baek ◽  
Min-Woo Kwon ◽  
Sungmin Hwang ◽  
Jeesoo Chang ◽  
...  
Keyword(s):  
Gate Length ◽  
Carrier Injection ◽  
Hot Carrier ◽  
Hot Carrier Injection

scholarly journals Ab initio perspective of ultra-scaled CMOS from 2D-material fundamentals to dynamically doped transistors

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Aryan Afzalian
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
High Mobility ◽  
Complementary Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Grand Challenge ◽  
Gate Length ◽  
Delay Performance ◽  
Effect Transistor

AbstractUsing accurate dissipative DFT-NEGF atomistic-simulation techniques within the Wannier-Function formalism, we give a fresh look at the possibility of sub-10-nm scaling for high-performance complementary metal oxide semiconductor (CMOS) applications. We show that a combination of good electrostatic control together with high mobility is paramount to meet the stringent roadmap targets. Such requirements typically play against each other at sub-10-nm gate length for MOS transistors made of conventional semiconductor materials like Si, Ge, or III–V and dimensional scaling is expected to end ~12 nm gate-length (pitch of 40 nm). We demonstrate that using alternative 2D channel materials, such as the less-explored HfS2 or ZrS2, high-drive current down to ~6 nm is, however, achievable. We also propose a dynamically doped field-effect transistor concept, that scales better than its MOSFET counterpart. Used in combination with a high-mobility material such as HfS2, it allows for keeping the stringent high-performance CMOS on current and competitive energy-delay performance, when scaling down to virtually 0 nm gate length using a single-gate architecture and an ultra-compact design (pitch of 22 nm). The dynamically doped field-effect transistor further addresses the grand-challenge of doping in ultra-scaled devices and 2D materials in particular.

Effect of Underlap with Fixed Gate Length: GaN-Based Double-Gate MOSFETs

2021 ◽  
Author(s):  
Md. Rokib Hasan ◽  
Md. Rabiul Islam ◽  
Tanjim Masroor Bhuiyan ◽  
Muhib Ashraf Nibir ◽  
Md. Emran Hasan ◽  
...  
Keyword(s):  
Gate Length ◽  
Double Gate

Preparation of Cr2O3/Al2O3 bipolar oxides as hydrogen permeation barriers by selective oxide removal on SS and atomic layer deposition

2019 ◽  
Vol 44 (23) ◽  
pp. 12277-12287 ◽  
Author(s):  
Mengyuan Zhang ◽  
Rongyi Zhao ◽  
Yunhan Ling ◽  
Rongguang Wang ◽  
Qingyun Zhou ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Hydrogen Permeation ◽  
Atomic Layer ◽  
Layer Deposition ◽  
Oxide Removal

scholarly journals Gate length dependent transport properties of in-plane core-shell nanowires with raised contacts

Nano Research ◽  
2019 ◽  
Vol 13 (1) ◽  
pp. 61-66
Author(s):  
Alexandre Bucamp ◽  
Christophe Coinon ◽  
David Troadec ◽  
Sylvie Lepilliet ◽  
Gilles Patriarche ◽  
...  
Keyword(s):  
Transport Properties ◽  
Core Shell ◽  
Gate Length ◽  
Dependent Transport ◽  
Shell Nanowires

Criteria for Accurate Measurement of Charge-Pumping Current in 4H-SiC MOSFETs

2008 ◽  
Vol 600-603 ◽  
pp. 747-750 ◽  
Author(s):  
Dai Okamoto ◽  
Hiroshi Yano ◽  
Tomoaki Hatayama ◽  
Yukiharu Uraoka ◽  
Takashi Fuyuki
Keyword(s):  
Gate Length ◽  
Fall Time ◽  
Charge Pumping

This paper describes the influence of the geometric component in the charge-pumping measurement of 4H-SiC MOSFETs. Charge-pumping measurements were conducted on 4H-SiC MOSFETs with and without NO annealing. Charge-pumping measurements with different pulse-fall times revealed that the geometric component exists in 4H-SiC MOSFETs and is especially large in the unannealed MOSFETs. A sufficiently long fall-time is needed to minimize its effect, which is expected to be 1–10 μs for 4H-SiC MOSFETs with a gate length of 10 μm.

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