Tungsten silicide gate stack optimization for 170-nm DRAM technology

2002 ◽  
Author(s):  
V. Rao ◽  
J. Morgan ◽  
W. Hoesler ◽  
J. Barden ◽  
Y. Karzhavin ◽  
...  
Keyword(s):  
Gate Stack ◽  
Tungsten Silicide

TEM characterization of WSix films

1994 ◽  
Vol 52 ◽  
pp. 848-849
Author(s):  
V. C. Kannan ◽  
S. M. Merchant ◽  
R. B. Irwin ◽  
A. K. Nanda ◽  
M. Sundahl ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Vapor Deposition ◽  
High Purity ◽  
Physical Vapor Deposition ◽  
Thermal Treatments ◽  
Rapid Thermal Anneal ◽  
Tungsten Silicide ◽  
Tem Characterization ◽  
Metal Silicides

Metal silicides such as WSi2, MoSi2, TiSi2, TaSi2 and CoSi2 have received wide attention in recent years for semiconductor applications in integrated circuits. In this study, we describe the microstructures of WSix films deposited on SiO2 (oxide) and polysilicon (poly) surfaces on Si wafers afterdeposition and rapid thermal anneal (RTA) at several temperatures. The stoichiometry of WSix films was confirmed by Rutherford Backscattering Spectroscopy (RBS). A correlation between the observed microstructure and measured sheet resistance of the films was also obtained.WSix films were deposited by physical vapor deposition (PVD) using magnetron sputteringin a Varian 3180. A high purity tungsten silicide target with a Si:W ratio of 2.85 was used. Films deposited on oxide or poly substrates gave rise to a Si:W ratio of 2.65 as observed by RBS. To simulatethe thermal treatments of subsequent processing procedures, wafers with tungsten silicide films were subjected to RTA (AG Associates Heatpulse 4108) in a N2 ambient for 60 seconds at temperatures ranging from 700° to 1000°C.

scholarly journals Multibit non-volatile memory based on WS2 transistor with engineered gate stack

AIP Advances ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 125124
Author(s):  
Xinyi Zhu ◽  
Longfei He ◽  
Yafen Yang ◽  
Kai Zhang ◽  
Hao Zhu ◽  
...  
Keyword(s):  
Gate Stack ◽  
Non Volatile Memory ◽  
Volatile Memory

Performance Analysis of Gate-Stack Dual-Material DG MOSFET Using Work-Function Modulation Technique for Lower Technology Nodes

Silicon ◽  
2021 ◽  
Author(s):  
Satish K. Das ◽  
Umakanta Nanda ◽  
Sudhansu M. Biswal ◽  
Chandan Kumar Pandey ◽  
Lalat Indu Giri
Keyword(s):  
Performance Analysis ◽  
Work Function ◽  
Gate Stack ◽  
Modulation Technique ◽  
Dg Mosfet ◽  
Technology Nodes ◽  
Dual Material

Properties of tungsten silicide thin films obtained by magnetron sputtering of composite cast targets

1997 ◽  
Author(s):  
V.G. Glebovsky ◽  
S.N. Ermolov ◽  
V.N. Motuzenko ◽  
E.D. Shtinov
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Tungsten Silicide
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