Design of a new K-band push-push oscillator improving output power

2008 ◽  
Author(s):  
Hyun-Wook Lee ◽  
Sung-Won Seo ◽  
Ki-Cheol Yoon ◽  
Kyoung-Min Oh ◽  
Seung-yeon Oh ◽  
...  
Keyword(s):  
Output Power ◽  
K Band

K-band FMCW radar CMOS front-end ICs with 13.3 dBm output power

2014 ◽  
Author(s):  
Gitae Pyo ◽  
Jaemo Yang ◽  
Hyunji Ku ◽  
Choul-Young Kim ◽  
Songcheol Hong
Keyword(s):  
Output Power ◽  
Fmcw Radar ◽  
Front End ◽  
K Band

A high-efficiency, broadband and high output power PHEMT balanced K-band doubler with integrated balun

2006 ◽  
Author(s):  
Wen-Ren Lee ◽  
Shih-Fong Chao ◽  
Zuo-Min Tsai ◽  
Pin-Cheng Huang ◽  
Chun-Hsien Lien ◽  
...  
Keyword(s):  
Output Power ◽  
High Efficiency ◽  
High Output Power ◽  
High Output ◽  
K Band

scholarly journals A High-Efficiency K-band MMIC Linear Amplifier Using Diode Compensation

Electronics ◽  
2019 ◽  
Vol 8 (5) ◽  
pp. 487 ◽  
Author(s):  
Zhu ◽  
Chen ◽  
Huang ◽  
Wang ◽  
Yu
Keyword(s):  
Output Power ◽  
High Efficiency ◽  
Small Signal Gain ◽  
Small Signal ◽  
Third Order ◽  
Nonlinear Capacitance ◽  
Power Added Efficiency ◽  
Linear Amplifier ◽  
Enhancement Method ◽  
K Band

This paper describes the design and measured performance of a high-efficiency and linearity-enhanced K-band MMIC amplifier fabricated with a 0.15 μm GaAs pHEMT processing technology. The linearization enhancement method utilizing a parallel nonlinear capacitance compensation diode was analyzed and verified. The three-stage MMIC operating at 20–22 GHz obtained an improved third-order intermodulation ratio (IM3) of 20 dBc at a 27 dBm per carrier output power while demonstrating higher than a 27 dB small signal gain and 1-dB compression point output power of 30 dBm with 33% power added efficiency (PAE). The chip dimension was 2.00 mm × 1.40 mm.

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