scholarly journals Paraxial space-domain formulation for surface fields on large dielectric coated circular cylinders

Author(s):  
V.B. Erturk ◽  
R.G. Rojas
2011 ◽  
Vol 42 (7) ◽  
pp. 595-612
Author(s):  
Masome Heidary ◽  
Mousa Farhadi ◽  
Kurosh Sedighi ◽  
Mostafa Nourollahi

Author(s):  
Carmen Popa ◽  
Violeta Anghelina ◽  
Octavian Munteanu

Abstract The descriptive geometry constitues the foundation of the engineering sciences, so necessary to the specialists of this field. The aim of this paper is to establish the intersection curve between two cylinders and their unfoldings, by using the programmes:AutoCAD and Mathematica. We used the classical method and we first establish the intersection curve and then the cylinders unfoldings. To do this, we used the AutoCAD program. The same unfoldings can be obtained by introducing directly the curve equations (which are inferred) in Mathematica program.


Author(s):  
J. Gaudestad ◽  
V. Talanov ◽  
A. Orozco ◽  
M. Marchetti

Abstract In the past couple years, Space Domain Reflectometry (SDR) has become a mainstream method to locate open defects among the major semiconductor manufacturers. SDR injects a radio frequency (RF) signal into the open trace creating a standing wave with a node at the open location. The magnetic field generated by the standing wave is imaged with a SQUID sensor using RF electronics. In this paper, we show that SDR can be used to non-destructively locate high resistance failures in Micro LeadFrame Packages (MLP).


Author(s):  
Mayue Xie ◽  
Zhiguo Qian ◽  
Mario Pacheco ◽  
Zhiyong Wang ◽  
Rajen Dias ◽  
...  

Abstract Recently, a new approach for isolation of open faults in integrated circuits (ICs) was developed. It is based on mapping the radio-frequency (RF) magnetic field produced by the defective part fed with RF probing current, giving the name to Space Domain Reflectometry (SDR). SDR is a non-contact and nondestructive technique to localize open defects in package substrates, interconnections and semiconductor devices. It provides 2D failure isolation capability with defect localization resolution down to 50 microns. It is also capable of scanning long traces in Si. This paper describes the principles of the SDR and its application for the localization of open and high resistance defects. It then discusses some analysis methods for application optimization, and gives examples of test samples as well as case studies from actual failures.


1990 ◽  
Vol 10 (1Supplement) ◽  
pp. 35-40 ◽  
Author(s):  
Kazuo OHMI ◽  
Kensaku IMAICHI ◽  
Ei-ichi TADA

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