60-GHz dual-conversion down-/up- converters using Schottky diode in 0.18 μm CMOS process: An alternative approach for millimeter-wave transceiver

2012 ◽  
Author(s):  
Chinchun Meng ◽  
Mau-Chung Frank Chang
Keyword(s):  
Millimeter Wave ◽  
Schottky Diode ◽  
Cmos Process ◽  
60 Ghz ◽  
Alternative Approach

A 60 GHz balun low-noise amplifier in 28-nm CMOS for millimeter-wave communication

2019 ◽  
Vol 33 (32) ◽  
pp. 1950396 ◽  
Author(s):  
Benqing Guo ◽  
Hongpeng Chen ◽  
Xuebing Wang ◽  
Jun Chen ◽  
Xianbin Xie ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Oxide Semiconductor ◽  
Cmos Process ◽  
60 Ghz ◽  
Noise Amplifier ◽  
5 Ghz ◽  
Millimeter Wave Communication ◽  
28 Nm

In this paper, a 60 GHz complementary metal-oxide-semiconductor (CMOS) balun low-noise amplifier (LNA) was implemented for millimeter-wave communication. To improve the gain and noise performance, slow-wave coplanar waveguides (S-CPW) with high quality factor were designed as input, output, and inter-stage matching networks. At the input port, a balun transformer provides additional passive gain while performing the singled-ended to differential conversion. Implemented in a 28-nm CMOS process, simulated results show that the proposed LNA exhibits a simulated linear gain of 16 dB and a noise figure of 5.6 dB at 60 GHz, with a 3-dB gain bandwidth of 5 GHz (58 GHz–63 GHz). The input return loss is better than −25 dB at the central frequency. The simulated input third-order intercept point (IIP3) is −5 dBm. The circuit draws 35 mA from 1 V supply voltage.

Millimeter-wave dual-mode and dual-band switchable Gilbert up-conversion mixer in 65-nm CMOS process

2021 ◽  
pp. 1-5
Author(s):  
Fang Zhu ◽  
Guo Qing Luo
Keyword(s):  
Millimeter Wave ◽  
Complementary Metal Oxide Semiconductor ◽  
Local Oscillator ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Dual Band ◽  
Cmos Process ◽  
Pumping Power ◽  
Dual Mode ◽  
Dc Power

Abstract In this paper, a millimeter-wave (MMW) dual-mode and dual-band switchable Gilbert up-conversion mixer in a commercial 65-nm complementary metal oxide semiconductor (CMOS) process is presented. By simply changing the bias, the proposed CMOS Gilbert up-conversion mixer can be switched between subharmonic and fundamental operation modes for MMW dual-band applications. With a low local oscillator pumping power of 3 dBm and low dc power consumption of 6 mW, the proposed CMOS Gilbert up-conversion mixer exhibits a measured conversion gain of −0.5 ± 1.5 dB from 37 to 50 GHz and 2.5 ± 1.5 dB from 17.5 to 32 GHz for the subharmonic and fundamental modes, respectively.

Photoresponse Nonlinearity of a Uni-Traveling-Carrier Photodiode and Its Application to Optoelectronic Millimeter-Wave Mixing in 60 GHz Band

2004 ◽  
Vol 43 (No. 7B) ◽  
pp. L966-L968 ◽  
Author(s):  
Hiroshi Fushimi ◽  
Tomofumu Furuta ◽  
Tadao Ishibashi ◽  
Hiroshi Ito
Keyword(s):  
Millimeter Wave ◽  
Wave Mixing ◽  
60 Ghz
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