Evaluation of trade-offs in transformer design for very-low-voltage power supply with very high efficiency and power density

1990 ◽  
Author(s):  
K.D.T. Ngo ◽  
R.P. Alley ◽  
A.J. Yerman ◽  
R.J. Charles ◽  
M.H. Kuo
Keyword(s):  
Power Density ◽  
Power Supply ◽  
High Efficiency ◽  
Low Voltage ◽  
Trade Offs ◽  
Transformer Design ◽  
Very High

Design issues for the transformer in a low-voltage power supply with high efficiency and high power density

1992 ◽  
Vol 7 (3) ◽  
pp. 592-600 ◽  
Author(s):  
K.D.T. Ngo ◽  
R.P. Alley ◽  
A.J. Yerman ◽  
R.J. Charles ◽  
M.H. Kuo
Keyword(s):  
Power Density ◽  
High Power ◽  
Power Supply ◽  
High Efficiency ◽  
Low Voltage ◽  
High Power Density ◽  
Design Issues

High Temperature Silicon-on-Insulator Gate Driver for SiC-FET Power Modules

2011 ◽  
Vol 2011 (HITEN) ◽  
pp. 000152-000158
Author(s):  
J. Valle Mayorga ◽  
C. Gutshall ◽  
K. Phan ◽  
I. Escorcia ◽  
H. A. Mantooth ◽  
...  
Keyword(s):  
Power Density ◽  
High Power ◽  
High Efficiency ◽  
Low Voltage ◽  
Silicon On Insulator ◽  
Switching Frequency ◽  
Cmos Process ◽  
High Power Density ◽  
Power Modules ◽  
Gate Driver

SiC power semiconductors have the capability of greatly outperforming Si-based power devices. Faster switching and smaller on-state losses coupled with higher voltage blocking and temperature capabilities, make SiC a very attractive semiconductor for high performance, high power density power modules. However, the temperature capabilities and increased power density are fully utilized only when the gate driver is placed next to the SiC devices. This requires the gate driver to successfully operate under these extreme conditions with reduced or no heat sinking requirements, allowing the full realization of a high efficiency, high power density SiC power module. In addition, since SiC devices are usually connected in a half or full bridge configuration, the gate driver should provide electrical isolation between the high and low voltage sections of the driver itself. This paper presents a 225 degrees Celsius operable, Silicon-On-Insulator (SOI) high voltage isolated gate driver IC for SiC devices. The IC was designed and fabricated in a 1 μm, partially depleted, CMOS process. The presented gate driver consists of a primary and a secondary side which are electrically isolated by the use of a transformer. The gate driver IC has been tested at a switching frequency of 200 kHz at 225 degrees Celsius while exhibiting a dv/dt noise immunity of at least 45 kV/μs.

Compact DC-DC Power Design in Half-Bridge IGBT Driver

2013 ◽  
Vol 397-400 ◽  
pp. 1888-1892
Author(s):  
Qiu Yan Wang ◽  
Yan Liu ◽  
Ping Xu ◽  
Da Cheng Luo
Keyword(s):  
Power Density ◽  
High Power ◽  
Power Supply ◽  
High Frequency ◽  
High Efficiency ◽  
High Power Density ◽  
Simple Circuit ◽  
Dc Power ◽  
Magnetic Cores ◽  
Drive Signals

The integrated half-bridge IGBT driver need compact, high efficiency and high power density isolated DC-DC power supply, a set of two magnetic cores share a high-frequency full-bridge switches are designed. A simple circuit generates four channel drive signals, without isolation, to achieve compact on-board power supply and the best combination with the integrated half-bridge IGBT driver. The key signals are simulated, and experimental results show that the power supply is simple, reliable.

Very high-efficiency and low voltage phosphorescent organic light-emitting diodes based on a p-i-n junction

2004 ◽  
Vol 95 (10) ◽  
pp. 5773-5777 ◽  
Author(s):  
Gufeng He ◽  
Oliver Schneider ◽  
Dashan Qin ◽  
Xiang Zhou ◽  
Martin Pfeiffer ◽  
...  
Keyword(s):  
High Efficiency ◽  
Light Emitting Diodes ◽  
Low Voltage ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Organic Light ◽  
Very High

Analysis of SMPS in Clinical Medical Equipment

2014 ◽  
Vol 484-485 ◽  
pp. 671-673
Author(s):  
Jun Ying Zhou ◽  
Nan Zhang ◽  
Su Fang Kong ◽  
Fu Hua Zhang ◽  
Xiu Xian Guo
Keyword(s):  
Power Supply ◽  
Medical Equipment ◽  
High Efficiency ◽  
Low Voltage ◽  
Voltage Level ◽  
Switch Mode Power Supply ◽  
Voltage Range ◽  
Dc Voltage ◽  
Off Time ◽  
Switch Circuit

There exists low voltage in circuit of domestic and imported medical equipment and it is what we call power supply. In the past, equipment mainly uses transformer to step down the voltage of power supply. With the progress of science and technology, the technique is gradually replaced by SMPW (switch mode power supply) which is extensively applied to various types of medical equipment due to the high efficiency and wide voltage range. The mains power supply is rectified and filtered into a DC high voltage and then use the switch circuit and energy storage elements to convert them into a variety of required DC voltage output, output DC voltage level can be adjusted by changing the off time (namely Mark-Space Ratio) of switching circuit.

Design and Testing of Bipolar Pulsed-Power Supply With High Efficiency and Power Density for Strategic Mineral Exploration

2019 ◽  
Vol 47 (10) ◽  
pp. 4458-4465
Author(s):  
Jung-Soo Bae ◽  
Jong-Soo Kim ◽  
Hyoung-Suk Kim ◽  
Chan-Hun Yu ◽  
Shin Kim ◽  
...  
Keyword(s):  
Power Density ◽  
Power Supply ◽  
High Efficiency ◽  
Mineral Exploration ◽  
Pulsed Power ◽  
Pulsed Power Supply ◽  
Design And Testing
Sign in / Sign up

Export Citation Format

Share Document