High frame rate VGA CMOS image sensor using two-step single slope ADCs

2016 ◽  
Author(s):  
Himchan Park ◽  
Junan Lee ◽  
Jinwoo Kim ◽  
Yongsik Shin ◽  
Jinwook Burm
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Frame Rate ◽  
High Frame Rate

High Frame-Rate VGA CMOS Image Sensor Using Non-Memory Capacitor Two-Step Single-Slope ADCs

2015 ◽  
Vol 62 (9) ◽  
pp. 2147-2155 ◽  
Author(s):  
Junan Lee ◽  
Himchan Park ◽  
Bongsub Song ◽  
Kiwoon Kim ◽  
Jaeha Eom ◽  
...  
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Frame Rate ◽  
High Frame Rate

High frame-rate low-power compressive sampling CMOS image sensor architecture

2013 ◽  
Author(s):  
Nikola Katic ◽  
Mahdad Hosseini Kamal ◽  
Mustafa Kilic ◽  
Alexandre Schmid ◽  
Pierre Vandergheynst ◽  
...  
Keyword(s):  
Low Power ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Compressive Sampling ◽  
Frame Rate ◽  
High Frame Rate

A Relative Imaging CMOS Image Sensor for High Dynamic Range and High Frame-Rate Machine Vision Imaging Applications

2015 ◽  
Vol 15 (7) ◽  
pp. 4121-4129 ◽  
Author(s):  
Nikola Katic ◽  
Vladan Popovic ◽  
Radisav Cojbasic ◽  
Alexandre Schmid ◽  
Yusuf Leblebici
Keyword(s):  
Machine Vision ◽  
Dynamic Range ◽  
High Dynamic Range ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Frame Rate ◽  
High Frame Rate ◽  
High Dynamic

High Frame Rate VGA CMOS Image Sensor using Three Step Single Slope Column-Parallel ADCs

2015 ◽  
Vol 15 (1) ◽  
pp. 22-28
Author(s):  
Junan Lee ◽  
Qiwei Huang ◽  
Kiwoon Kim ◽  
Kyunghoon Kim ◽  
Jinwook Burm
Keyword(s):  
Cmos Image Sensor ◽  
Image Sensor ◽  
Frame Rate ◽  
High Frame Rate

scholarly journals On-CMOS Image Sensor Processing for Lane Detection

Sensors ◽  
2021 ◽  
Vol 21 (11) ◽  
pp. 3713
Author(s):  
Soyeon Lee ◽  
Bohyeok Jeong ◽  
Keunyeol Park ◽  
Minkyu Song ◽  
Soo Youn Kim
Keyword(s):  
Edge Detection ◽  
High Speed ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Image Resolution ◽  
Lane Detection ◽  
Frame Rate ◽  
Total Power ◽  
Detection Accuracy ◽  
Total Power Consumption

This paper presents a CMOS image sensor (CIS) with built-in lane detection computing circuits for automotive applications. We propose on-CIS processing with an edge detection mask used in the readout circuit of the conventional CIS structure for high-speed lane detection. Furthermore, the edge detection mask can detect the edges of slanting lanes to improve accuracy. A prototype of the proposed CIS was fabricated using a 110 nm CIS process. It has an image resolution of 160 (H) × 120 (V) and a frame rate of 113, and it occupies an area of 5900 μm × 5240 μm. A comparison of its lane detection accuracy with that of existing edge detection algorithms shows that it achieves an acceptable accuracy. Moreover, the total power consumption of the proposed CIS is 9.7 mW at pixel, analog, and digital supply voltages of 3.3, 3.3, and 1.5 V, respectively.

scholarly journals Design of an Edge-Detection CMOS Image Sensor with Built-in Mask Circuits

Sensors ◽  
2020 ◽  
Vol 20 (13) ◽  
pp. 3649
Author(s):  
Minhyun Jin ◽  
Hyeonseob Noh ◽  
Minkyu Song ◽  
Soo Youn Kim
Keyword(s):  
Power Consumption ◽  
Edge Detection ◽  
Low Power ◽  
High Speed ◽  
Cmos Image Sensor ◽  
Image Sensor ◽  
Frame Rate ◽  
Oxide Semiconductor ◽  
Total Power ◽  
Total Power Consumption

In this paper, we propose a complementary metal-oxide-semiconductor (CMOS) image sensor (CIS) that has built-in mask circuits to selectively capture either edge-detection images or normal 8-bit images for low-power computer vision applications. To detect the edges of images in the CIS, neighboring column data are compared in in-column memories after column-parallel analog-to-digital conversion with the proposed mask. The proposed built-in mask circuits are implemented in the CIS without a complex image signal processer to obtain edge images with high speed and low power consumption. According to the measurement results, edge images were successfully obtained with a maximum frame rate of 60 fps. A prototype sensor with 1920 × 1440 resolution was fabricated with a 90-nm 1-poly 5-metal CIS process. The area of the 4-shared 4T-active pixel sensor was 1.4 × 1.4 µm2, and the chip size was 5.15 × 5.15 mm2. The total power consumption was 9.4 mW at 60 fps with supply voltages of 3.3 V (analog), 2.8 V (pixel), and 1.2 V (digital).

360×360 element three-phase very high frame rate burst image sensor: design, operation and performance

1997 ◽  
Vol 44 (10) ◽  
pp. 1617-1624 ◽  
Author(s):  
W.F. Kosonocky ◽  
G. Yang ◽  
R.K. Kabra ◽  
C. Ye ◽  
Z. Pektas ◽  
...  
Keyword(s):  
Image Sensor ◽  
Frame Rate ◽  
Sensor Design ◽  
High Frame Rate ◽  
Three Phase ◽  
And Performance ◽  
Very High
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