A 2.4-GHz CMOS Tunable Image-Rejection Low-Noise Amplifier with Active Inductor

2006 ◽  
Author(s):  
Ler Chun Lee ◽  
Abu Khari bin A'ain ◽  
Albert Victor Kordesch
Keyword(s):  
Low Noise ◽  
Low Noise Amplifier ◽  
Active Inductor ◽  
Image Rejection ◽  
Noise Amplifier

A 2.4 GHz highly linear image-rejection low noise amplifier by using an active inductor

2009 ◽  
Vol 51 (6) ◽  
pp. 1570-1573
Author(s):  
Jain-Yi Li ◽  
Chin-Sheng Chang ◽  
Wen-Jeng Lin ◽  
Han-Jan Chen ◽  
Lih-Shan Chen ◽  
...  
Keyword(s):  
Low Noise ◽  
Low Noise Amplifier ◽  
Active Inductor ◽  
Image Rejection ◽  
Noise Amplifier

scholarly journals Design of CMOS Tunable Image-Rejection Low-Noise Amplifier with Active Inductor

VLSI Design ◽  
2008 ◽  
Vol 2008 ◽  
pp. 1-6 ◽  
Author(s):  
Ler Chun Lee ◽  
Abu Khari bin A'ain ◽  
Albert Victor Kordesch
Keyword(s):  
Noise Figure ◽  
Notch Filter ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Active Inductor ◽  
Cmos Process ◽  
Image Rejection ◽  
Fully Integrated ◽  
Active Inductors ◽  
Noise Amplifier

A fully integrated CMOS tunable image-rejection low-noise amplifier (IRLNA) has been designed using Silterra's industry standard 0.18 μm RF CMOS process. The notch filter is designed using an active inductor. Measurement results show that the notch filter designed using active inductor contributes additional 1.19 dB to the noise figure of the low-noise amplifier (LNA). A better result is possible if the active inductor is optimized. Since active inductors require less die area, the die area occupied by the IRLNA is not significantly different from a conventional LNA, which was designed for comparison. The proposed IRLNA exhibits S21 of 11.8 dB, S11 of −17.8 dB, S22 of −10.7 dB, and input 1 dB compression point of −12 dBm at 3 GHz

scholarly journals Design of Low Power UWB CMOS Low Noise Amplifier using Active Inductor for WLAN Receiver

2018 ◽  
Vol 7 (2.24) ◽  
pp. 448
Author(s):  
S Manjula ◽  
M Malleshwari ◽  
M Suganthy
Keyword(s):  
Low Power ◽  
Noise Figure ◽  
Wide Band ◽  
Cmos Technology ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
Design System ◽  
Active Inductor ◽  
Chip Area ◽  
Noise Amplifier

This paper presents a low power Low Noise Amplifier (LNA) using 0.18µm CMOS technology for ultra wide band (UWB) applications. gm boosting common gate (CG) LNA is designed to improve the noise performance.  For the reduction of on chip area, active inductor is employed at the input side of the designed LNA for input impedance matching. The proposed UWB LNA is designed using Advanced Design System (ADS) at UWB frequency of 3.1-10.6 GHz. Simulation results show that the gain of 10.74+ 0.01 dB, noise figure is 4.855 dB, input return loss <-13 dB and 12.5 mW power consumption.  

g-boosted flat gain UWB low noise amplifier with active inductor-based input matching network

Integration ◽  
2016 ◽  
Vol 52 ◽  
pp. 323-333 ◽  
Author(s):  
A. Saberkari ◽  
Sh Kazemi ◽  
V. Shirmohammadli ◽  
M.C.E. Yagoub
Keyword(s):  
Low Noise ◽  
Low Noise Amplifier ◽  
Active Inductor ◽  
Matching Network ◽  
Input Matching ◽  
Flat Gain ◽  
Noise Amplifier

scholarly journals Design of Active Inductor Based Tunable Low Noise Amplifier (LNA)

IJARCCE ◽  
2019 ◽  
Vol 8 (5) ◽  
pp. 166-172
Author(s):  
Subhashini V. ◽  
Maheswari Dr.M. ◽  
Abinaya A.
Keyword(s):  
Low Noise ◽  
Low Noise Amplifier ◽  
Active Inductor ◽  
Noise Amplifier
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