Sheet resistance evaluation of conductive thin films using microstrip antenna

2017 ◽  
Author(s):  
Ming Ye ◽  
Lu Wang ◽  
Yongning He ◽  
Mojgan Daneshmand
Keyword(s):  
Thin Films ◽  
Sheet Resistance ◽  
Microstrip Antenna ◽  
Resistance Evaluation ◽  
Conductive Thin Films

scholarly journals Sheet Resistance Measurements of Conductive Thin Films: A Comparison of Techniques

Electronics ◽  
2021 ◽  
Vol 10 (8) ◽  
pp. 960
Author(s):  
Mira Naftaly ◽  
Satyajit Das ◽  
John Gallop ◽  
Kewen Pan ◽  
Feras Alkhalil ◽  
...  
Keyword(s):  
Thin Films ◽  
Sheet Resistance ◽  
Flexible Electronics ◽  
Electronic Devices ◽  
Conductivity Measurements ◽  
Terahertz Time Domain Spectroscopy ◽  
Comparison Of Techniques ◽  
Terahertz Frequencies ◽  
Conductive Thin Films ◽  
Multiple Samples

Conductive thin films are an essential component of many electronic devices. Measuring their conductivity accurately is necessary for quality control and process monitoring. We compare conductivity measurements on films for flexible electronics using three different techniques: four-point probe, microwave resonator and terahertz time-domain spectroscopy. Multiple samples were examined, facilitating the comparison of the three techniques. Sheet resistance values at DC, microwave and terahertz frequencies were obtained and were found to be in close agreement.

Electrical Anisotropy of Thin Metal Films Growing on Dielectric Substrates

2002 ◽  
Vol 7 (2) ◽  
pp. 45-52
Author(s):  
L. Jakučionis ◽  
V. Kleiza
Keyword(s):  
Magnetic Field ◽  
Thin Films ◽  
Uniaxial Anisotropy ◽  
Metal Films ◽  
Thin Layers ◽  
Electrical Anisotropy ◽  
Electrical Field ◽  
Dielectric Substrates ◽  
Unequal Probability ◽  
Conductive Thin Films

Electrical properties of conductive thin films, that are produced by vacuum evaporation on the dielectric substrates, and which properties depend on their thickness, usually are anisotropic i.e. they have uniaxial anisotropy. If the condensate grow on dielectric substrates on which plane electrical field E is created the transverse voltage U⊥ appears on the boundary of the film in the direction perpendicular to E. Transverse voltage U⊥ depends on the angle γ between the applied magnetic field H and axis of light magnetisation. When electric field E is applied to continuous or grid layers, U⊥ and resistance R of layers are changed by changing γ. It means that value of U⊥ is the measure of anisotropy magnitude. Increasing voltage U0 , which is created by E, U⊥ increases to certain magnitude and later decreases. The anisotropy of continuous thin layers is excited by inequality of conductivity tensor components σ0 ≠ σ⊥. The reason of anisotropy is explained by the model which shows that properties of grain boundaries are defined by unequal probability of transient of charge carrier.

Carbon Nanotube Based Transparent Conductive Thin Films

2006 ◽  
Vol 6 (7) ◽  
pp. 1939-1944 ◽  
Author(s):  
X. Yu ◽  
R. Rajamani ◽  
K. A. Stelson ◽  
T. Cui
Keyword(s):  
Thin Films ◽  
Carbon Nanotube ◽  
Conductive Thin Films

Depositing High-Performance Conductive Thin Films by Using Atomic Layer Deposition

2015 ◽  
Vol 764-765 ◽  
pp. 138-142 ◽  
Author(s):  
Fa Ta Tsai ◽  
Hsi Ting Hou ◽  
Ching Kong Chao ◽  
Rwei Ching Chang
Keyword(s):  
Thin Films ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Atomic Layer ◽  
Electric Properties ◽  
X Ray Diffraction ◽  
Layer Deposition ◽  
Azo Thin Film ◽  
Aluminum Doped Zinc Oxide ◽  
Conductive Thin Films

This work characterizes the mechanical and opto-electric properties of Aluminum-doped zinc oxide (AZO) thin films deposited by atomic layer deposition (ALD), where various depositing temperature, 100, 125, 150, 175, and 200 °C are considered. The transmittance, microstructure, electric resistivity, adhesion, hardness, and Young’s modulus of the deposited thin films are tested by using spectrophotometer, X-ray diffraction, Hall effect analyzer, micro scratch, and nanoindentation, respectively. The results show that the AZO thin film deposited at 200 °C behaves the best electric properties, where its resistance, Carrier Concentration and mobility reach 4.3×10-4 Ωcm, 2.4×1020 cm-3, and 60.4 cm2V-1s-1, respectively. Furthermore, microstructure of the AZO films deposited by ALD is much better than those deposited by sputtering.

Synthesis of silver nanowires with controlled diameter and their conductive thin films

2019 ◽  
Vol 30 (14) ◽  
pp. 12876-12887 ◽  
Author(s):  
Shah Fahad ◽  
Haojie Yu ◽  
Li Wang ◽  
Ahsan Nazir ◽  
Raja Summe Ullah ◽  
...  
Keyword(s):  
Thin Films ◽  
Silver Nanowires ◽  
Conductive Thin Films

Effect of the perfluoroalkyl groups on the preparation of carbon-based transparent and conductive thin films from silylated graphite oxides

2011 ◽  
Vol 132 (10) ◽  
pp. 669-672 ◽  
Author(s):  
Yoshiaki Matsuo ◽  
Kenshiro Iwasa ◽  
Yosohiro Sugie ◽  
Hisanao Usami ◽  
Masayuki Kawaguchi
Keyword(s):  
Thin Films ◽  
Conductive Thin Films ◽  
Graphite Oxides ◽  
Carbon Based

CONDUCTIVE COPPER SULFIDE THIN FILMS ON POLYIMIDE FOILS FOR OPTICAL AND OPTOELECTRONIC APPLICATIONS

2001 ◽  
Vol 15 (17n19) ◽  
pp. 774-777 ◽  
Author(s):  
J. CARDOSO ◽  
O. GOMEZ-DAZA ◽  
L. IXTLILCO ◽  
M. T. S. NAIR ◽  
P. K. NAIR
Keyword(s):  
Thin Films ◽  
Sheet Resistance ◽  
Copper Sulfide ◽  
Optoelectronic Device ◽  
Infrared Reflectance ◽  
Thermally Stable ◽  
Conductive Coatings ◽  
Device Structures ◽  
Conductive Substrates ◽  
Optoelectronic Applications

Copper sulfide thin films of 75 nm and 100 nm thickness were coated on Kapton foils (PI) of 25 nm thickness by floating them on a chemical bath. The foils were annealed at 150°C-400°C in N 2 converting the coating from CuS to Cu 1.8 S . The sheet resistance of the annealed coatings (100 nm) is 10-50 ohms/square which is almost unaltered after immersion in dilute HCl for 30-120 min. The infrared reflectance predicted for the coatings is 67%-77% at a wavelength 2.5 μm, which is nearly what is experimentally observed. The coated PI has a transmittance (25-35%) peak located around 550-600 nm. These thermally stable conductive coatings on PI foils might be used as conductive substrates for optoelectronic device structures.

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