24GHz Substrate Integrated Waveguide power splitter for six-port short range radar based sensor

2016 ◽  
Author(s):  
G. S. Tan ◽  
S. Z. Ibrahim ◽  
M. S. Razalli
Keyword(s):  
Short Range ◽  
Substrate Integrated Waveguide ◽  
Power Splitter

scholarly journals 79GHz Substrate Integrated Waveguide antenna for short-range radar applications

2021 ◽  
Vol 1916 (1) ◽  
pp. 012025
Author(s):  
G Santhakumar ◽  
R Vadivelu ◽  
M Revathy Lakshmi ◽  
G J Saranya ◽  
R Subasini
Keyword(s):  
Short Range ◽  
Substrate Integrated Waveguide ◽  
Radar Applications

scholarly journals RETRACTED: A Semi-Hexagonal Array (1×2) Antenna Using Half Mode Substrate Integrated Waveguide for Short Range Communication Devices

2018 ◽  
Vol 8 (3) ◽  
pp. 3004-3008
Author(s):  
M. E. Munir ◽  
S. S. Qurashie
Keyword(s):  
Short Range ◽  
Review Process ◽  
Substrate Integrated Waveguide ◽  
Hexagonal Array ◽  
Unpublished Paper ◽  
Communication Devices

This article has been retracted at the request of the Editor-in-Chief due to extended similarites with an unpublished paper, written by other authors, that was submitted (but not yet published) to several other journals and was probably leaked during the review process.  The authors of the unpublished paper contacted the Editor-In-Chief with the above claim after the publication of this issue and ETASR has contacted several of the journals mentioned and the investigation resulted in the confirmation of the report. The authors of this paper failed to provide any reasoning regarding the case.

scholarly journals Substrate integrated waveguide bandpass filter for short range device application using rectangular open loop resonator

2021 ◽  
Vol 11 (5) ◽  
pp. 3747
Author(s):  
Dian Widi Astuti ◽  
Rizki Ramadhan Putra ◽  
Muslim Muslim ◽  
Mudrik Alaydrus
Keyword(s):  
Short Range ◽  
Return Loss ◽  
Bandpass Filter ◽  
Open Loop ◽  
Frequency Region ◽  
Substrate Integrated Waveguide ◽  
Network Analyzer ◽  
Measurement Results ◽  
Simulation Results ◽  
Good Agreement

The substrate integrated waveguide (SIW) structure is the candidate for many application in microwave, terahertz and millimeter wave application. It because of SIW structure can integrate with any component in one substrate than others structure. A kind components using SIW structure is a filter component, especialy bandpass filter. This research recommended SIW bandpass filter using rectangular open loop resonator for giving more selectivity of filter. It can be implemented for short range device (SRD) application in frequency region 2.4 - 2.483 GHz. Two types of SIW bandpass filter are proposed. First, SIW bandpass filter is proposed using six rectangular open loop resonators while the second SIW bandpass filter used eight rectangular open loop resonators. The simulation results for two kinds of the recommended rectangular open loop resonators have insertion loss (S<sub>21</sub> parameter) below 2 dB and return loss (S<sub>11</sub> parameter) more than 10 dB. Fabrication of the recommended two kind filters was validated by Vector Network Analyzer. The measurement results for six rectangular open loop resonators have 1.32 dB for S<sub>21</sub> parameter at 2.29 GHz while the S<sub>11</sub> parameter more than 18 dB at 2.26 GHz – 2.32 GHz. While the measurement results has good agreement for eight rectangular open loop resonators. Its have S<sub>21</sub> below 2.2 dB at 2.41 – 2.47 GHz and S<sub>11</sub> 16.27 dB at 2.38 GHz and 11.5 dB at 2.47 GHz.

Domain coarsening by grain boundary migration in ordered Ni4Mo

1986 ◽  
Vol 44 ◽  
pp. 560-561
Author(s):  
K. Vasudevan ◽  
H. P. Kao ◽  
C. R. Brooks ◽  
E. E. Stansbury
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Short Range ◽  
Boundary Migration ◽  
Grain Boundary Migration ◽  
Rapid Cooling ◽  
Temperature Range ◽  
Fee Structure ◽  
Domain Coarsening ◽  
Boundary Reaction

The Ni4Mo alloy has a short-range ordered fee structure (α) above 868°C, but transforms below this temperature to an ordered bet structure (β) by rearrangement of atoms on the fee lattice. The disordered α, retained by rapid cooling, can be ordered by appropriate aging below 868°C. Initially, very fine β domains in six different but crystallographically related variants form and grow in size on further aging. However, in the temperature range 600-775°C, a coarsening reaction begins at the former α grain boundaries and the alloy also coarsens by this mechanism. The purpose of this paper is to report on TEM observations showing the characteristics of this grain boundary reaction.

Ordering in Ni4Mo by TEM and APFIM

1987 ◽  
Vol 45 ◽  
pp. 214-215
Author(s):  
E.A. Kenik ◽  
T.A. Zagula ◽  
M.K. Miller ◽  
J. Bentley
Keyword(s):  
Electron Irradiation ◽  
Low Temperatures ◽  
Short Range ◽  
Atom Probe ◽  
Range Order ◽  
Considerable Time ◽  
Probe Field ◽  
Disordered Phase ◽  
Transmission Electron ◽  
Diffraction Patterns

The state of long-range order (LRO) and short-range order (SRO) in Ni4Mo has been a topic of interest for a considerable time (see Brooks et al.). The SRO is often referred to as 1½0 order from the apparent position of the diffuse maxima in diffraction patterns, which differs from the positions of the LRO (D1a) structure. Various studies have shown that a fully disordered state cannot be retained by quenching, as the atomic arrangements responsible for the 1½0 maxima are present at temperatures above the critical ordering temperature for LRO. Over 20 studies have attempted to identify the atomic arrangements associated with this state of order. A variety of models have been proposed, but no consensus has been reached. It has also been shown that 1 MeV electron irradiation at low temperatures (∼100 K) can produce the disordered phase in Ni4Mo. Transmission electron microscopy (TEM), atom probe field ion microscopy (APFIM), and electron irradiation disordering have been applied in the current study to further the understanding of the ordering processes in Ni4Mo.

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