New Parallel Simulation Techniques of DEVS and Cell-DEVS in CD++

2006 ◽  
Author(s):  
E. Glinsky ◽  
G. Wainer
Keyword(s):  
Parallel Simulation ◽  
Simulation Techniques

A Study on Parallel and Pipelining Simulation Techniques for Edge Detection and Their Performance Analysis

2019 ◽  
Vol 16 (2) ◽  
pp. 568-572
Author(s):  
Merlin L. M. Livingston ◽  
Senthil C. Singh ◽  
K. Manojkumar ◽  
Sathish S. Kumar
Keyword(s):  
Edge Detection ◽  
Prime Number ◽  
Parallel Simulation ◽  
Canny Edge Detection ◽  
Simulation Techniques ◽  
Image Edge Detection ◽  
Multi Stage ◽  
Canny Edge ◽  
Image Edge ◽  
Sobel Edge Detection

Real processing components along with component simulators are combined together to construct a new virtual prototyping system. The increase in component simulators result in degraded performance of the simulation in distributed systems. The speed of simulation can be increased by doing parallel simulation techniques. Prime number test and Image edge detection are chosen to implement the parallel simulation techniques and achieved the expected results while implementing in real time applications. The prime number test calculates the number of processors in a system and the image edge detection can be done in two stages by Canny Edge detection and Sobel Edge detection. The Canny Edge detection is used to detect the edges in the images by using a multi-stage algorithm. The smaller, separable and integer valued filter in images are combined in horizontal and vertical directions by using the Sobel edge detection resulting in reduction of implementation cost. The tool named OpenMP is used for implementing the parallel simulation techniques by combining both the canny edge and Sobel edge detection. An add-on named MPI is used along with the OpenMP to reduce the implementation time in parallel processing.

Parallel simulation techniques for large-scale networks

1998 ◽  
Vol 36 (8) ◽  
pp. 42-47 ◽  
Author(s):  
S. Bhatt ◽  
R. Fujimoto ◽  
A. Ogielski ◽  
K. Perumalla
Keyword(s):  
Large Scale ◽  
Parallel Simulation ◽  
Simulation Techniques ◽  
Large Scale Networks

Image Analysis of Intramembrane Particles in Freeze-Fractured Biomembranes Using Computer Simulation Techniques

1975 ◽  
Vol 33 ◽  
pp. 214-215
Author(s):  
D.J. Benefiel ◽  
R.S. Weinstein
Keyword(s):  
Membrane Proteins ◽  
Freeze Fracture ◽  
Integral Membrane Proteins ◽  
Systematic Evaluation ◽  
Intramembrane Particles ◽  
Modeling Methods ◽  
Simulation Techniques ◽  
Freeze Fracture Electron Microscopy ◽  
Fracture Electron ◽  
Computer Simulation Techniques

Intramembrane particles (IMP or MAP) are components of most biomembranes. They are visualized by freeze-fracture electron microscopy, and they probably represent replicas of integral membrane proteins. The presence of MAP in biomembranes has been extensively investigated but their detailed ultrastructure has been largely ignored. In this study, we have attempted to lay groundwork for a systematic evaluation of MAP ultrastructure. Using mathematical modeling methods, we have simulated the electron optical appearances of idealized globular proteins as they might be expected to appear in replicas under defined conditions. By comparing these images with the apearances of MAPs in replicas, we have attempted to evaluate dimensional and shape distortions that may be introduced by the freeze-fracture technique and further to deduce the actual shapes of integral membrane proteins from their freezefracture images.

Σ =13 tilt grain boundary in silicon bicrystal

1990 ◽  
Vol 48 (4) ◽  
pp. 562-563
Author(s):  
M.J. Kim ◽  
Y.L. Chen ◽  
R.W. Carpenter ◽  
J.C. Barry ◽  
G.H. Schwuttke
Keyword(s):  
Grain Boundary ◽  
Grain Boundaries ◽  
Rotation Axis ◽  
Czochralski Method ◽  
High Resolution Electron Microscopy ◽  
Image Simulation ◽  
Simulation Techniques ◽  
Resolution Electron ◽  
The Common ◽  
Tilt Grain Boundary

The structure of grain boundaries (GBs) in metals, semiconductors and ceramics is of considerable interest because of their influence on physical properties. Progress in understanding the structure of grain boundaries at the atomic level has been made by high resolution electron microscopy (HREM) . In the present study, a Σ=13, (510) <001>-tilt grain boundary in silicon was characterized by HREM in conjunction with digital image processing and computer image simulation techniques.The bicrystals were grown from the melt by the Czochralski method, using preoriented seeds. Specimens for TEM observations were cut from the bicrystals perpendicular to the common rotation axis of pure tilt grain boundary, and were mechanically dimpled and then ion-milled to electron transparency. The degree of misorientation between the common <001> axis of the bicrystal was measured by CBED in a Philips EM 400ST/FEG: it was found to be less than 1 mrad. HREM was performed at 200 kV in an ISI-002B and at 400 kv in a JEM-4000EX.

Sign in / Sign up

Export Citation Format

Share Document