Investigation of hydrogen evolution and dangling bonds creation mechanism in amorphous silicon nitride thin films

2002 ◽  
Author(s):  
T. Li ◽  
J. Kanicki ◽  
M. Fitzner ◽  
W.L. Warren
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Hydrogen Evolution ◽  
Dangling Bonds ◽  
Amorphous Silicon Nitride

Diffusion in Isotope Heterostructures Investigated by Neutron Reflectometry

2009 ◽  
Vol 289-292 ◽  
pp. 697-703 ◽  
Author(s):  
Erwin Hüger ◽  
Jochen Stahn ◽  
Udo Geckle ◽  
Michael Bruns ◽  
Harald Schmidt
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Model System ◽  
Neutron Reflectometry ◽  
Diffusion In Solids ◽  
Amorphous Silicon Nitride ◽  
Self Diffusion

Studies of self-diffusion in solids are presented, which are based on neutron reflectometry. For the application of this technique the samples under investigation are prepared in form of isotope heterostructures. These are nanometer sized thin films, which are chemically completely homogenous, but isotope modulated. Using this method, diffusion lengths in the order of 1 nm and below can be detected which allows to determine ultra low diffusivities in the order of 10-25 m2/s. For the model system amorphous silicon nitride we demonstrate how the structure of the isotope hetrostructures (triple layers or multilayers) influences the efficiency of diffusivity determination.

Photoluminescence analyses of hydrogenated amorphous silicon nitride thin films

2011 ◽  
Vol 131 (7) ◽  
pp. 1305-1311 ◽  
Author(s):  
Mustafa Anutgan ◽  
Tamila (Aliyeva) Anutgan ◽  
Ismail Atilgan ◽  
Bayram Katircioglu
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Amorphous Silicon Nitride ◽  
Hydrogenated Amorphous

Electronic Structure of Defects in Amorphous Silicon Nitride

1992 ◽  
Vol 284 ◽  
Author(s):  
John Robertson
Keyword(s):  
Electronic Structure ◽  
Silicon Nitride ◽  
Percolation Threshold ◽  
Amorphous Silicon ◽  
Electronic Properties ◽  
Valence Band ◽  
Band Edge ◽  
Valence Band Edge ◽  
Dangling Bonds ◽  
Amorphous Silicon Nitride

ABSTRACTThe paper reviews the electronic properties of defects in amorphous silicon nitride (a-Si3N4) and the hydrogenated alloys a-SiNx:H. The main defects in a-Si3N4 are the Si and N dangling bonds (DBs). The Si DB forms a sp3 state near midgap, while the N DB forms a highly localized pπ level just above the valence band edge. The behaviour of the alloys changes near x ≈ 1.1, the percolation threshold of Si-Si bonds. In the Si-rich alloys, both band edges are Si-like, only Si DBs are seen and their density is controlled by equilibration with weak Si-Si bonds. The x>1.1 alloys behave like silicon nitride; the valence band changes towards N pπ-like, both Si and N DBs can arise, the Si DB can have a high density and prefers to be in its charged diamagnetic configurations.

Amorphous silicon nitride thin films deposited using d. c. discharge and post-discharge devices

1990 ◽  
Vol 189 (1) ◽  
pp. 111-123 ◽  
Author(s):  
J.L. Jauberteau ◽  
D. Conte ◽  
M.I. Baraton ◽  
P. Quintard ◽  
J. Aubreton ◽  
...  
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Post Discharge ◽  
Amorphous Silicon Nitride
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