Modeling and design of FETs in the temperature range from -50°C to +120°C oriented to low-power GaAs ICs CAD applying low-frequency design techniques
HEMTs for low-power and low-frequency noise 4.2 K cryoelectronics : fabrication and characterization
1998 ◽
Vol 08
(PR3)
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pp. Pr3-131-Pr3-134
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Keyword(s):
2016 ◽
Vol 2
(09)
◽
pp. 625-630
2019 ◽
Vol E102.C
(4)
◽
pp. 269-275
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2013 ◽
Vol 475-476
◽
pp. 1624-1628
2021 ◽
2018 ◽
Vol 14
(2)
◽
pp. 266-274
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Keyword(s):
Keyword(s):
Keyword(s):