BRAM implementation of a single-event upset sensor for adaptive single-event effect mitigation in reconfigurable FPGAs

2017 ◽  
Author(s):  
Robert Glein ◽  
Philipp Mengs ◽  
Florian Rittner ◽  
Rainer Wansch ◽  
Albert Heuberger
Keyword(s):  
Single Event Upset ◽  
Single Event ◽  
Single Event Effect

A SEE Hardened Read-Out Circuit of EEPROM for Space Application

2012 ◽  
Vol 198-199 ◽  
pp. 1105-1109
Author(s):  
Xin Jie Zhou ◽  
Jing He Wei ◽  
Lei Lei Li
Keyword(s):  
Circuit Design ◽  
Space Application ◽  
Single Event Upset ◽  
Single Event ◽  
Single Event Transient ◽  
Single Event Effect ◽  
Radiation Hardened

As wide application of EEPROM devices in space and military field, more and more researches focus on its radiation hardened characteristics in international. To improve the single-event effect (SEE) tolerant ability of read-out circuits in the memory, a radiation hardened circuit is designed. The design kernels of radiation hardened latch-flip are given and designed to resist the single-event upset (SEU) effect. A correction circuit is proposed to resist the single-event transient (SET) effect. The performances of this design are: SEU (LET)th ≥ 27 MeV•cm2/mg, SEL(LET)th ≥ 75 MeV•cm2/mg , read out time ≤200 ns. The new design not only satisfied the needs of present work, but supplies a worthful reference for radiation hardened circuit design in future.

VLSI for Space Applications—Single Event Effect Investigation and Optical Analysis on an Integrated Laser Platform

2017 ◽  
Author(s):  
Samuel Chef ◽  
Chung Tah Chua ◽  
Yu Wen Siah ◽  
Philippe Perdu ◽  
Chee Lip Gan ◽  
...  
Keyword(s):  
Pulsed Laser ◽  
Single Event ◽  
Optical Analysis ◽  
Space Applications ◽  
Laser Probing ◽  
Single Event Effect ◽  
Evaluation Time ◽  
Black Boxes ◽  
System Use ◽  
First Time

Abstract Today’s VLSI devices are neither designed nor manufactured for space applications in which single event effects (SEE) issues are common. In addition, very little information about the internal schematic and usually nothing about the layout or netlist is available. Thus, they are practically black boxes for satellite manufacturers. On the other hand, such devices are crucial in driving the performance of spacecraft, especially smaller satellites. The only way to efficiently manage SEE in VLSI devices is to localize sensitive areas of the die, analyze the regions of interest, study potential mitigation techniques, and evaluate their efficiency. For the first time, all these activities can be performed using the same tool with a single test setup that enables a very efficient iterative process that reduce the evaluation time from months to days. In this paper, we will present the integration of a pulsed laser for SEE study into a laser probing, laser stimulation, and emission microscope system. Use of this system will be demonstrated on a commercial 8 bit microcontroller.

SEU (Single Event Upset) Vulnerability of the Zilog Z-80 and NSC-800 Microprocessors,

1986 ◽  
Author(s):  
R. Koga ◽  
W. A. Kolasinski ◽  
C. King ◽  
J. Cusick
Keyword(s):  
Single Event Upset ◽  
Single Event

Single Event Upset Evaluation for a 28-nm FDSOI SRAM Type Buffer in an ARM Processor

2021 ◽  
Author(s):  
Shuting Shi ◽  
Rui Chen ◽  
Rui Liu ◽  
Mo Chen ◽  
Chen Shen ◽  
...  
Keyword(s):  
Single Event Upset ◽  
Single Event ◽  
Arm Processor ◽  
28 Nm

Impact of heavy ion energy and species on single-event upset in commercial floating gate cells

2021 ◽  
Vol 120 ◽  
pp. 114128
Author(s):  
Bing Ye ◽  
Li-Hua Mo ◽  
Peng-Fei Zhai ◽  
Li Cai ◽  
Tao Liu ◽  
...  
Keyword(s):  
Heavy Ion ◽  
Floating Gate ◽  
Single Event Upset ◽  
Single Event ◽  
Ion Energy
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