scholarly journals The Level-Set Method for Multi-Material Wet Etching and Non-Planar Selective Epitaxy

IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 115406-115422
Author(s):  
Alexander Toifl ◽  
Michael Quell ◽  
Xaver Klemenschits ◽  
Paul Manstetten ◽  
Andreas Hossinger ◽  
...  
Keyword(s):  
Level Set Method ◽  
Level Set ◽  
Wet Etching ◽  
Selective Epitaxy

scholarly journals Implementation and evaluation of the Level Set method: Towards efficient and accurate simulation of wet etching for microengineering applications

2013 ◽  
Vol 184 (10) ◽  
pp. 2299-2309 ◽  
Author(s):  
C. Montoliu ◽  
N. Ferrando ◽  
M.A. Gosálvez ◽  
J. Cerdá ◽  
R.J. Colom
Keyword(s):  
Level Set Method ◽  
Level Set ◽  
Wet Etching

scholarly journals Application of the level set method on the non-convex Hamiltonians

2009 ◽  
Vol 7 (1) ◽  
pp. 33-44
Author(s):  
B. Radjenovic ◽  
M. Radmilovic-Radjenovic ◽  
M. Mitric
Keyword(s):  
Level Set Method ◽  
Level Set ◽  
Etching Rate ◽  
Three Dimensional ◽  
Field Method ◽  
Rate Function ◽  
Wet Etching ◽  
Silicon Etching ◽  
Symmetry Properties ◽  
Interpolation Technique

Application of the level set method extended for the case of non-convex Hamiltonians is illustrated by the three dimensional (3D) simulation results of the profile evolution during anisotropic wet etching of silicon. Etching rate function is modeled on the basis of the silicon symmetry properties, by means of the interpolation technique using experimentally obtained values of the principal [100], [110], [111], and high index [311] directions in KOH solutions. The resulting level set equations are solved using an open source implementation of the sparse field method.

scholarly journals Etching of Uncompensated Convex Corners with Sides along and in 25 wt% TMAH at 80 °C

Micromachines ◽  
2020 ◽  
Vol 11 (3) ◽  
pp. 253 ◽  
Author(s):  
Milče M. Smiljanić ◽  
Žarko Lazić ◽  
Vesna Jović ◽  
Branislav Radjenović ◽  
Marija Radmilović-Radjenović
Keyword(s):  
Level Set Method ◽  
Level Set ◽  
Water Solution ◽  
Wet Etching ◽  
Tetramethylammonium Hydroxide ◽  
Convex Corner ◽  
Crystallographic Planes ◽  
Good Agreement

This paper presents etching of convex corners with sides along <n10> and <100> crystallographic directions in a 25 wt% tetramethylammonium hydroxide (TMAH) water solution at 80 °C. We analyzed parallelograms as the mask patterns for anisotropic wet etching of Si (100). The sides of the parallelograms were designed along <n10> and <100> crystallographic directions (1 < n < 8). The acute corners of islands in the masking layer formed by <n10> and <100> crystallographic directions were smaller than 45°. All the crystallographic planes that appeared during etching in the experiment were determined. We found that the obtained types of 3D silicon shape sustain when n > 2. The convex corners were not distorted during etching. Therefore, no convex corner compensation is necessary. We fabricated three matrices of parallelograms with sides along crystallographic directions <310> and <100> as examples for possible applications. Additionally, the etching of matrices was simulated by the level set method. We obtained a good agreement between experiments and simulations.

Level Set Method Optimized with the Euclidean Distance Transform

2019 ◽  
Author(s):  
Luis Fernando Segalla ◽  
Alexandre Zabot ◽  
Diogo Nardelli Siebert ◽  
Fabiano Wolf
Keyword(s):  
Level Set Method ◽  
Level Set ◽  
Euclidean Distance ◽  
Distance Transform ◽  
Euclidean Distance Transform
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