scholarly journals A Precise Harmonic Control Technique for High Efficiency Concurrent Dual-Band Continuous Class-F Power Amplifier

IEEE Access ◽  
2018 ◽  
Vol 6 ◽  
pp. 51864-51874 ◽  
Author(s):  
Zhenxing Yang ◽  
Yao Yao ◽  
Mingyu Li ◽  
Yi Jin ◽  
Tian Li ◽  
...  
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Dual Band ◽  
Control Technique ◽  
Harmonic Control ◽  
Class F

Concurrent dual band class F power amplifier with novel harmonic control network

2012 ◽  
Vol 54 (3) ◽  
pp. 707-711 ◽  
Author(s):  
Yao Ding ◽  
Yong-Xin Guo ◽  
Fa-Lin Liu ◽  
Lan You
Keyword(s):  
Power Amplifier ◽  
Dual Band ◽  
Control Network ◽  
Harmonic Control ◽  
Band Class ◽  
Class F

High-efficiency concurrent dual-band class-F and inverse class-F power amplifier

2011 ◽  
Vol 47 (15) ◽  
pp. 847 ◽  
Author(s):  
Y. Ding ◽  
Y.X. Guo ◽  
F.L. Liu
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Dual Band ◽  
Band Class ◽  
Class F

A methodology for designing class-F−1/J(J−1) high efficiency concurrent dual-band power amplifier

2018 ◽  
Vol 81 ◽  
pp. 1-7 ◽  
Author(s):  
Milad Shariatifar ◽  
Mohsen Jalali ◽  
Abdolali Abdipour
Keyword(s):  
Power Amplifier ◽  
High Efficiency ◽  
Dual Band ◽  
Band Power ◽  
Class F

scholarly journals A 6 GHz Integrated High-Efficiency Class-F−1 Power Amplifier in 65 nm CMOS Achieving 47.8% Peak PAE

Electronics ◽  
2021 ◽  
Vol 10 (20) ◽  
pp. 2450
Author(s):  
Syed Muhammad Ammar Ali ◽  
S. M. Rezaul Hasan
Keyword(s):  
Power Amplifier ◽  
Peak Power ◽  
High Efficiency ◽  
Impedance Matching ◽  
Center Frequency ◽  
Dual Purpose ◽  
Power Added Efficiency ◽  
Harmonic Control ◽  
Saturated Output Power ◽  
Class F

This paper reports a “single-transistor” Class-F−1 power amplifier (PA) in 65 nm CMOS, which operates at the microwave center frequency of 6 GHz. The PA is loaded with a Class-F−1 harmonic control network, employing a new “parasitic-aware” topology deduced using a novel iterative algorithm. A dual-purpose output matching network is designed, which not only serves the purpose of output impedance matching, but also reinforces the harmonic control of the Class-F−1 harmonic network. This proposed PA yields a peak power-added efficiency (PAE) of 47.8%, which is one of the highest when compared to previously reported integrated microwave/millimeter-wave PAs in CMOS and SiGe technologies. The amplifier shows a saturated output power of 14.4 dBm along with an overall gain of 13.8 dB.

High-efficiency inverse class-F power amplifier using 3/4 spiral symmetric defected ground structure

2011 ◽  
Vol 3 (6) ◽  
pp. 621-625
Author(s):  
Shilei Jin ◽  
Jianyi Zhou ◽  
Lei Zhang
Keyword(s):  
Power Amplifier ◽  
High Performance ◽  
High Efficiency ◽  
Control Circuit ◽  
Defected Ground Structure ◽  
Ground Structure ◽  
Power Added Efficiency ◽  
Harmonic Control ◽  
Resonance Frequencies ◽  
Class F

In this article, the development of a high-efficiency power amplifier (PA) with the inverse class-F configuration and a novel 3/4 spiral defected ground structure (DGS) is presented. The proposed DGS structure has improved rejection characteristic and its resonance frequencies are more convenient to adjust than conventional symmetric and asymmetric spiral structure. The electromagnetic-simulated result shows that the proposed circuit has improved harmonic control performance with simplified structure and less return loss than the conventional microstrip harmonic control circuit. The 3/4 spiral harmonics control circuit (HCC) can be modeled by three parallel RLC resonators. Using the proposed structure a high-performance harmonic control circuit is designed for implementing an inverse class-F PA. For comparison, two inverse class-F PAs operating at 2.4 GHz have been implemented by the microstrip HCC and the proposed HCC, respectively. According to the experiment results, the size of the proposed inverse class-F PA is reduced by 20%, the power-added efficiency and the gain are increased by 4.8% and 1.5 dB, respectively.

scholarly journals S-Band Class-C-F Power Amplifier with 2nd Harmonic Control at the Input

2019 ◽  
Vol 10 (1) ◽  
pp. 259
Author(s):  
Xiaoxiao Li ◽  
Paolo Colantonio ◽  
Franco Giannini ◽  
Hongxi Yu ◽  
Chenchen Lin
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
High Efficiency ◽  
Input Shaping ◽  
Voltage Waveform ◽  
Harmonic Control ◽  
Band Class ◽  
Class C ◽  
Stage Class ◽  
Class F

Power amplifiers (PAs) are the most power-consuming devices in a transmitter. Their performance in efficiency is crucial to the efficiency of the whole system. Therefore, the issue of high efficiency PA has remained hot over the years. This paper presents an approach to design an S-band single stage class-F PA biased in class-C condition. Through the manipulation of the 2nd harmonic at the input, shaping the voltage waveform at the gate node, a class-F PA with proper output matching network (OMN) is realized. The proposed class-C-F PA achieved 60% drain efficiency (DE) and 36.3 dBm of output power around the 3 dB compression point. The methodology of taking the input non-linearity into consideration is also presented. Its feasibility has been verified through both the design and measurements.

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