scholarly journals The Line Scan Camera Calibration Based on Space Rings Group

IEEE Access ◽  
2018 ◽  
Vol 6 ◽  
pp. 23711-23721 ◽  
Author(s):  
Menghui Niu ◽  
Kechen Song ◽  
Xin Wen ◽  
Defu Zhang ◽  
Yunhui Yan
Keyword(s):  
Camera Calibration ◽  
Line Scan

Line-scan CCD camera calibration in 2D coordinate measurement

Optik ◽  
2014 ◽  
Vol 125 (17) ◽  
pp. 4795-4798 ◽  
Author(s):  
Weihong Ma ◽  
Tao Dong ◽  
Hui Tian ◽  
Jinping Ni
Keyword(s):  
Camera Calibration ◽  
Ccd Camera ◽  
Coordinate Measurement ◽  
Line Scan

Cross-ratio–based line scan camera calibration using a planar pattern

2016 ◽  
Vol 55 (1) ◽  
pp. 014104 ◽  
Author(s):  
Dongdong Li ◽  
Gongjian Wen ◽  
Shaohua Qiu
Keyword(s):  
Camera Calibration ◽  
Cross Ratio ◽  
Line Scan ◽  
Planar Pattern

Line-scan camera calibration: a robust linear approach

2020 ◽  
Vol 59 (30) ◽  
pp. 9443
Author(s):  
R. Usamentiaga ◽  
D. F. Garcia ◽  
F. J. de la Calle
Keyword(s):  
Camera Calibration ◽  
Line Scan ◽  
Linear Approach

A Novel Line Scan Camera Calibration Technique With an Auxiliary Frame Camera

2013 ◽  
Vol 62 (9) ◽  
pp. 2567-2575 ◽  
Author(s):  
Bingwei Hui ◽  
Gongjian Wen ◽  
Peng Zhang ◽  
Deren Li
Keyword(s):  
Camera Calibration ◽  
Calibration Technique ◽  
Line Scan

Review on Line-Scan Camera Calibration Methods

2020 ◽  
Vol 40 (1) ◽  
pp. 0111011
Author(s):  
王国珲 Wang Guohui ◽  
钱克矛 Qian Kemao
Keyword(s):  
Camera Calibration ◽  
Line Scan ◽  
Calibration Methods ◽  
On Line

Flexible line-scan camera calibration method using a coded eight trigrams pattern

2018 ◽  
Vol 110 ◽  
pp. 296-307 ◽  
Author(s):  
Kechen Song ◽  
Bin Hou ◽  
Menghui Niu ◽  
Xin Wen ◽  
Yunhui Yan
Keyword(s):  
Camera Calibration ◽  
Calibration Method ◽  
Line Scan

Arsenic segregation in polysilicon

1983 ◽  
Vol 41 ◽  
pp. 154-155 ◽  
Author(s):  
P.E. Batson ◽  
C.R.M. Grovenor ◽  
D.A. Smith ◽  
C. Wong
Keyword(s):  
Incident Beam ◽  
Silicon Wafers ◽  
Chemical Polishing ◽  
Bright Field Image ◽  
Beam Size ◽  
Stem Analysis ◽  
Bright Field ◽  
Twin Boundaries ◽  
X Ray ◽  
Line Scan

In this work As doped polysilicon was deposited onto (100) silicon wafers by APCVD at 660°C from a silane-arsine mixture, followed by a ten minute anneal at 1000°C, and in one case a further ten minute anneal at 700°C. Specimens for TEM and STEM analysis were prepared by chemical polishing. The microstructure, which is unchanged by the final 700°C anneal,is shown in Figure 1. It consists of numerous randomly oriented grains many of which contain twins.X-ray analysis was carried out in a VG HB5 STEM. As K α x-ray counts were collected from STEM scans across grain and twin boundaries, Figures 2-4. The incident beam size was about 1.5nm in diameter, and each of the 20 channels in the plots was sampled from a 1.6nm length of the approximately 30nm line scan across the boundary. The bright field image profile along the scanned line was monitored during the analysis to allow correlation between the image and the x-ray signal.

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