scholarly journals Electrical Nonlinearity Emulation Technique for Current-Controlled Memristive Devices

IEEE Access ◽  
2017 ◽  
Vol 5 ◽  
pp. 5399-5409 ◽  
Author(s):  
Abdullah G. Alharbi ◽  
Mohammed E. Fouda ◽  
Zainulabideen J. Khalifa ◽  
Masud H. Chowdhury
Keyword(s):  
Electrical Nonlinearity

Investigation of electrical nonlinearity of HTS thin films as applied to realization of a microwave IC mixer

1995 ◽  
Vol 8 (6) ◽  
pp. 705-714
Author(s):  
M. Jeck ◽  
S. Kolesov ◽  
A. Kozyrev ◽  
T. Samoilova ◽  
O. Vendik
Keyword(s):  
Thin Films ◽  
Electrical Nonlinearity

The Effects of Bi2O3 Doping on the Electrical Characteristics of SnO2 Based Varistors

2011 ◽  
Vol 287-290 ◽  
pp. 486-489 ◽  
Author(s):  
Ji Wei Fan ◽  
Zhen Guo Zhang ◽  
Xiao Peng Li ◽  
Xiang Yang Liu ◽  
Tian Li
Keyword(s):  
Barrier Height ◽  
Doping Level ◽  
Sintering Temperature ◽  
Electrical Characteristics ◽  
Zno Varistors ◽  
Electrical Nonlinearity

Bi2O3 is an important additive in the composition of ZnO varistors. However, the effect of Bi2O3 on novel SnO2 based varistors is still unclear. This paper reports the nonlinear electrical characteristics of (98.95-x)mol%SnO2-0.5mol%CoO-0.05mol%Nb2O5- xmol% Bi2O3 (x = 0, 0.05, 0.1, 0.5 mol%) system, and the influence of sintering temperature is also investigated. The addition of Bi2O3 can improve the electrical nonlinearity of SnO2-CoO-Ta2O5 based varistors, this may be due to the higher barrier height and barrier voltage. The optimum Bi2O3 doping level is between 0.1-0.5mol% and the optimum sintering temperature is 1350°C.

Electrical nonlinearity of (Ni, Ta) doped SnO2 varistors

2003 ◽  
Vol 99 (1-3) ◽  
pp. 465-469 ◽  
Author(s):  
Jin-Feng Wang ◽  
Hong-Cun Chen ◽  
Wen-Xin Wang ◽  
Wen-Bin Su ◽  
Guo-Zhong Zang
Keyword(s):  
Electrical Nonlinearity

Extension of a piezoelectric semiconductor fiber with consideration of electrical nonlinearity

2018 ◽  
Vol 229 (11) ◽  
pp. 4663-4676 ◽  
Author(s):  
Guangying Yang ◽  
Jianke Du ◽  
Ji Wang ◽  
Jiashi Yang
Keyword(s):  
Piezoelectric Semiconductor ◽  
Electrical Nonlinearity

Electrical nonlinearity of (Cu, Ni, Nb)-doped SnO2 varistors system

2003 ◽  
Vol 99 (1-3) ◽  
pp. 457-460 ◽  
Author(s):  
Wen-Xin Wang ◽  
Jin-Feng Wang ◽  
Hong-Cun Chen ◽  
Wen-Bin Su ◽  
Guo-Zhong Zang
Keyword(s):  
Electrical Nonlinearity

Electrical nonlinearity pre-compensation for CO-OFDM system

Optik ◽  
2014 ◽  
Vol 125 (2) ◽  
pp. 616-619
Author(s):  
Xuejun Liu ◽  
Haiying Luan ◽  
Wenbai Chen ◽  
Yue Dai ◽  
Jiandong Liu ◽  
...  
Keyword(s):  
Ofdm System ◽  
Electrical Nonlinearity

Effect of MnCO3 on ZnO-Pr6O11-Co2O3-Cr2O3 Varistor Ceramics

2012 ◽  
Vol 217-219 ◽  
pp. 1135-1140
Author(s):  
Ming Zhao ◽  
Meng Zhang ◽  
Yu Shi ◽  
Zhi Long Wang
Keyword(s):  
Grain Boundary ◽  
Electric Field ◽  
Breakdown Voltage ◽  
Current Density ◽  
Leak Current ◽  
Doped Zno ◽  
Electrical Nonlinearity ◽  
Leak Current Density

0~1.5mol% MnCO3doped ZnO-Pr6O11-Co2O3-Cr2O3varistor ceramics were synthesized by conventional oxides mixing procedure. The effect of MnCO3variations on the microstructure, phase constituents and electric field–current density (E-J) characteristics of the ceramics were studied by SEM, XRD examinations and standard E-J test. The result showed the electrical nonlinearity exponents and breakdown voltage of the ceramics increased from 38 and 1296V/mm of the un-doped one to 52 and 1420V/mm respectively with the addition of 0.5mol% MnCO3; meanwhile, the leak current density was reduced from 4.35μA/cm2 to 2.05 μA/cm2. Further doping MnCO3deteriorated the overall varistor properties of the ceramics by remarkably decreasing the density of the ceramic, and the main reason causing the density drop was ascribed to the hindering effect of the well dispersed perovskite-like Pr0.95Mn0.9393O3particles formed mainly within the ZnO grain boundary areas.

Electrical Nonlinearity in Fracture of Piezoelectric Ceramics

1997 ◽  
Vol 50 (11S) ◽  
pp. S56-S63 ◽  
Author(s):  
Chandler C. Fulton ◽  
Huajian Gao
Keyword(s):  
Energy Release Rate ◽  
Energy Release ◽  
Release Rate ◽  
Fracture Criterion ◽  
Piezoelectric Ceramics ◽  
Remarkable Feature ◽  
Cracking Behavior ◽  
Poling Direction ◽  
Dugdale’S Model ◽  
Electrical Nonlinearity

The structural reliability of piezoelectric ceramics in smart sensors and actuators is hindered by the lack of an appropriate fracture mechanics model. Recent experimental observations of their cracking behavior under combined electrical and mechanical loads contradict predictions made by the linear theory. Evidently, a fracture criterion suitable for piezoelectrics must account for material nonlinearity. Because these materials are typically mechanically brittle, we expect electrical ductility to be the dominant effect. By adopting a multiscale viewpoint, we identify a region of electrical nonlinearity near the crack tip in which the mechanical response of the material remains linear. The equilibrium equations for a fully anisotropic solid have closed-form solutions if the material’s behavior is assumed to be entirely linear outside of the plane of the crack. This approximation is equivalent to Dugdale’s model of the plastic zone in cracked metal sheets. The energy release rate derived using this load for specimens with cracks perpendicular to the poling direction. A remarkable feature of our model is that the energy release rate is strictly independent of the form of the nonlinear electrical constitutive relation. In fact, the material may even experience domain switching in the Dugdale zone without affecting the fracture criterion determined by our formulation.

scholarly journals Electrical nonlinearity in colossal magnetoresistance manganite films: Relevance of correlated polarons

2009 ◽  
Vol 79 (13) ◽  
Author(s):  
V. Moshnyaga ◽  
K. Gehrke ◽  
O. I. Lebedev ◽  
L. Sudheendra ◽  
A. Belenchuk ◽  
...  
Keyword(s):  
Colossal Magnetoresistance ◽  
Electrical Nonlinearity
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