scholarly journals Optimizing OSSB Generation Using Semiconductor Optical Amplifier (SOA) for 5G Millimeter Wave Switching

IEEE Access ◽  
2017 ◽  
pp. 1-1 ◽  
Author(s):  
Fadhel Saadaoui ◽  
Mohamed Fathallah ◽  
Amr Ragheb ◽  
Irfan Memon ◽  
Habib Fathallah ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Semiconductor Optical Amplifier ◽  
Optical Amplifier ◽  
Wave Switching

scholarly journals Performance optimization of RSOA based mm-wave radio-over-fibre access network

2021 ◽  
Vol 53 (10) ◽  
Author(s):  
Eszter Udvary
Keyword(s):  
Millimeter Wave ◽  
Semiconductor Optical Amplifier ◽  
Access Network ◽  
Optical Amplifier ◽  
Bias Current ◽  
Critical Element ◽  
Optical Carrier ◽  
Wave Radio ◽  
Radio Over Fibre ◽  
Reflective Semiconductor Optical Amplifier

AbstractIn this paper, a Reflective Semiconductor Optical Amplifier based, Radio-over-Fibre access network configuration has been proposed to feed future millimeter-wave radio systems. The system architecture combines several approaches to overcome the challenges of millimeter-wave signal transmission. Reflective semiconductor optical amplifier modulator realizes a colorless and relatively cost-effective Remote Antenna Unit. The same optical carrier is used for both downlink and uplink. Optical single-sideband modulation is used at the downlink, which is robust against chromatic dispersion, but the complex realization of this modulation format is not possible at the Remote Antenna Unit. Optical intermediate frequency transmission is applied at the uplink direction, and the required local oscillator signal originates from the central station. The critical element is the reflective optical amplifier, as it compensates for the optical loss and works as an external intensity modulator. The operation of the reflective optical amplifier is modeled by multisection rate and wave equation-based description. The amplification and modulation behaviors of an available reflective optical amplifier are also measured. The experimental work validated the colorless operation and the quality of the modulation versus bias current and input optical power. Finally, system simulation was realized. The uplink and downlink power budgets were balanced, and optimal values for the optical coupling rate and RSOA bias current have been selected.

Frequency Encoded All Optical Tri-state Logic Gates NOT and NAND Using Semiconductor Optical Amplifier Based Interferometric Switches

2020 ◽  
Vol 10 (4) ◽  
pp. 369-380
Author(s):  
K. Maji ◽  
K. Mukherjee ◽  
A. Raja
Keyword(s):  
Semiconductor Optical Amplifier ◽  
Extinction Ratio ◽  
Optical Power ◽  
Logic Gates ◽  
Optical Amplifier ◽  
All Optical ◽  
State Frequency ◽  
Spontaneous Noise ◽  
First Time ◽  
Practical Feasibility

All optical tri-state frequency encoded logic gates NOT and NAND are proposed and numerically investigated using TOAD based interferometric switch for the first time to the best of our knowledge. The optical power spectrum, extinction ratio, contrast ration, and amplified spontaneous noise are calculated to analyze and confirm practical feasibility of the gates. The proposed device works for low switching energy and has high contrast and extinction ratio as indicated in this work.

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