scholarly journals A Wireless System for Monitoring Leakage Current in Electrical Substation Equipment

IEEE Access ◽  
2016 ◽  
Vol 4 ◽  
pp. 2965-2975 ◽  
Author(s):  
N. Harid ◽  
A. C. Bogias ◽  
H. Griffiths ◽  
S. Robson ◽  
A. Haddad
2016 ◽  
Vol 32 (1) ◽  
pp. 567-589 ◽  
Author(s):  
Mohamed A. Moustafa ◽  
Khalid M. Mosalam

The paper demonstrates the substructuring concept in seismic qualification testing of 550 kV electrical substation disconnect switches. In this study, the full and substructured (i.e., without support structure) switches are tested on a six degrees of freedom (DOFs) shaking table. Different combinations of translational and rotational excitations are obtained from full switch tests and used in the substructured ones. The behavior of the post insulators of the switches are compared to demonstrate validity and identify limitations of the substructuring concept applied to electrical substation equipment. From this comparison, critical DOFs for the response of post insulators in switches supported on flexible structures are identified. It is concluded that the in-plane and out-of-plane behavior of the investigated post insulators are uncoupled. The substructured tests driven by combined translational and rotational signals showed the best match with the full switch tests because the out-of-plane rotations contribute significantly to the response of the post insulators.


2004 ◽  
Vol 20 (1) ◽  
pp. 205-223 ◽  
Author(s):  
Andrew S. Whittaker ◽  
Gregory L. Fenves ◽  
Amir S. J. Gilani

The earthquake performance of 196-kV, 230-kV, and 550-kV porcelain transformer bushings was studied by earthquake-simulator experimentation and analysis. The fundamental frequencies of the 196-kV, 230-kV, and 550-kV bushings were identified to be approximately 15 Hz, 18 Hz, and 8 Hz, respectively, using resonance-search testing on the simulator. The corresponding damping ratios were between 2 and 4 percent of critical. The 196-kV and 230-kV bushings survived severe earthquake shaking and were qualified to the High Level per the IEEE 693-1997 standard. The discrepancy between excellent behavior in the laboratory and poor behavior in the field of these types of bushings calls into question the procedures used for qualification of substation equipment. The 550-kV bushing survived shaking at the moderate performance level with limited damage and minor oil leakage. Current procedures for fragility testing of transformer bushings were evaluated and found to be neither appropriate nor conservative.


10.1002/eqe.9 ◽  
2001 ◽  
Vol 30 (3) ◽  
pp. 327-347 ◽  
Author(s):  
A. Der Kiureghian ◽  
J. L. Sackman ◽  
K-J. Hong

2014 ◽  
Vol 51 (3) ◽  
pp. 15-23 ◽  
Author(s):  
V. Nepomnyaschiy ◽  
J. Gerhards ◽  
A. Mahnitko ◽  
T. Lomane

Abstract Substation reliability is always a topical problem. The authors consider the techniques for reliability calculation based on logical-probabilistic approach to the evaluation of electrical substation switchgear schemes and equipment at emergency situations with disconnections of individual elements of the substation equipment or false operation of relay protection and automation devices. Based on the reliability analysis made for the 330kV substations of Latvian Electric Power System, recommendations are given concerning the reconstruction of switchgear schemes for some substations


Author(s):  
DEEKSHA BAJPAI ◽  
AVNISH KUMAR UPADHYAY

In this paper, the effect of temperature variation and doping variation of p-body on various parameters like Breakdown voltage, on resistance, drain leakage current, threshold voltage etc of SOI laterally diffused MOSFET has been analyzed. Since power mosfet is designed for radio frequency power amplifiers which is used in wireless system-on-a-chip applications. The device is fabricated on a thin-film SOI wafer in order to reduce the leakage current and also prohibit the formation of parasitic diode with substrate. On the basis of analysis we are able to prove that this SOI LDMOSFET has +ve temperature coefficient for breakdown voltage, negative temp coefficient for threshold voltage, positive temperature coefficient for on resistance and +ve temperature coefficient for drain leakage current.


Sign in / Sign up

Export Citation Format

Share Document