Effect of the loaded quality factor on power efficiency for CMOS class-E RF tuned power amplifiers

1999 ◽  
Vol 46 (5) ◽  
pp. 628-634 ◽  
Author(s):  
S. Hung-Lung Tu ◽  
C. Toumazou
Keyword(s):  
Quality Factor ◽  
Power Amplifiers ◽  
Power Efficiency ◽  
Class E

Comparative Analysis of the Effect of Loaded Quality Factor, Technology Node and Operating Frequency on Various Class E Power Amplifier Topologies

2020 ◽  
pp. 2150083
Author(s):  
Mir Mohsina Rahman ◽  
G. M. Rather
Keyword(s):  
Comparative Analysis ◽  
Quality Factor ◽  
Power Amplifier ◽  
Power Amplifiers ◽  
Operating Frequency ◽  
Resonant Circuit ◽  
Circuit Parameter ◽  
Power Added Efficiency ◽  
Technology Node ◽  
Class E

This paper aims to explore and compare the dependence of power amplifier performance parameters on the loaded quality factor of the resonant circuit, the technology node used and the operating frequency for different variants of the class E power amplifier. In spite of the fact that the circuit parameter variations of the basic class E amplifier are present in the literature, there is a lack of comparative analysis with respect to other class E power amplifiers based on diverse tuned load networks. Moreover, the effects of these three parameters are rarely discussed. The comparative analysis helps the designers to narrow down the selection of a power amplifier to be used for a particular application. This study is focused on the use of class E power amplifiers in biomedical implants at the Medical Implant Communication Service band and Industrial Scientific and Medical band. It is observed that the power added efficiency and the power gain have an inverse dependence on the loaded quality factor, frequency and the technology node while the output power depends directly on these parameters.

scholarly journals High- efficiency class E power amplifier using SI-GE HBT technology

2004 ◽  
Vol 2 (02) ◽  
Author(s):  
J.A. Tirado-Méndez ◽  
H. Jardón-Aguilar
Keyword(s):  
Power Amplifier ◽  
High Power ◽  
Power Amplifiers ◽  
Power Efficiency ◽  
High Efficiency ◽  
Noise Figure ◽  
Current Source ◽  
Power Gain ◽  
Low Level ◽  
Class E

One of the most important goals of RF circuit designers is improving efficiency and autonomy in handsets for personal communications. Currently, low-level voltage supplies are used to avoid big weight and volume. Besides, autonomy and efficiency are closely linked to the energy consumed by the circuits. Power Amplifier (PA) is one of the circuits, which spends more energy from the battery. Improving the PA efficiency, handset performance is also improved. Previous publications have mentioned the difference of power amplifiers where the circuit output works as I) a current source or II) as a switch. The class E power amplifiers are devices whose output works as a switch achieving great performance and high power efficiency, reaching, in an ideal case, 100 % of efficiency. In this paper, a low-level voltage class E power amplifier is analyzed, designed, simulated, built and characterized, using a silicio-Germains HBT transistor as an active element. The circuit was optimized using a harmonic balanced simulator (Microwave Office ® [1]). 70% power efficiency was measured after an optimizing procedure, although better performance can be expected with an improved switching transistor and more precisely lumped elements. The prototype was designed to operate at 900 MHz and fed with 2.4 V, but it is well known that low-level polarization voltages affect efficiency, linearity, power gain, bandwidth, noise figure, as well as cost in RF circuits. However the class E PA reported in this paper reaches high efficiency, high power gain as well as a good bandwidth, with lowlevel polarization voltage.

scholarly journals Design of the Class-E Power Amplifier with Finite DC Feed Inductance under Maximum-Rating Constraints

2021 ◽  
Vol 11 (9) ◽  
pp. 3727
Author(s):  
Ingrid Casallas ◽  
Carlos-Ivan Paez-Rueda ◽  
Gabriel Perilla ◽  
Manuel Pérez ◽  
Arturo Fajardo
Keyword(s):  
Quality Factor ◽  
Power Amplifier ◽  
Wide Spectrum ◽  
Circuit Simulation ◽  
Percentage Error ◽  
Resonant Circuit ◽  
Mean Square ◽  
Peak Voltage ◽  
Supply Current ◽  
Class E

This paper proposes an analytical expression set to determine the maximum values of currents and voltages in the Class-E Power Amplifier (PA) with Finite DC-Feed Inductance (FDI) under the following assumptions—ideal components (e.g., inductors and capacitors with infinite quality factor), a switch with zero rise and fall commutation times, zero on-resistance, and infinite off-resistance, and an infinite loaded quality factor of the output resonant circuit. The developed expressions are the average supply current, the RMS (Root Mean Square) current through the DC-feed inductance, the peak voltage and current in the switch, the RMS current through the switch, the peak voltages of the output resonant circuit, and the peak voltage and current in the PA load. These equations were obtained from the circuit analysis of this ideal amplifier and curve-fitting tools. Furthermore, the proposed expressions are a useful tool to estimate the maximum ratings of the amplifier components. The accuracy of the expressions was analyzed by the circuit simulation of twelve ideal amplifiers, which were designed to meet a wide spectrum of application scenarios. The resulting Mean Absolute Percentage Error (MAPE) of the maximum-rating constraints estimation was 2.64%.

scholarly journals Analysis and Design of Outphasing Transmitter Using Class-E Power Amplifiers With Shunt Capacitances and Shunt Filters

IEEE Access ◽  
2020 ◽  
Vol 8 ◽  
pp. 208879-208891
Author(s):  
Pavel Afanasyev ◽  
Andrei Grebennikov ◽  
Ronan Farrell ◽  
John Dooley
Keyword(s):  
Power Amplifiers ◽  
Analysis And Design ◽  
Class E
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