The effect of lattice matching between buffer layer and YBa/sub 2/Cu/sub 3/O/sub 7-δ/ thin film on in-plane alignment of c-axis oriented thin films

2001 ◽  
Vol 11 (1) ◽  
pp. 2734-2737 ◽  
Author(s):  
K. Chiba ◽  
S. Makino ◽  
M. Mukaida ◽  
M. Kusunoki ◽  
S. Ohshima
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Buffer Layer ◽  
Lattice Matching

Cd-Free Zn(O,S) as Alternative Buffer Layer for Chalcogenide and Kesterite Based Thin Films Solar Cells: A Review

2020 ◽  
Vol 20 (6) ◽  
pp. 3622-3635 ◽  
Author(s):  
Kuldeep S. Gour ◽  
Rahul Parmar ◽  
Rahul Kumar ◽  
Vidya N. Singh
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Band Gap ◽  
Buffer Layer ◽  
Low Cost ◽  
Incident Light ◽  
High Resistivity ◽  
Short Wavelength Range ◽  
Absorber Material

Cd is categorized as a toxic material with restricted use in electronics as there are inherent problems of treating waste and convincing consumers that it is properly sealed inside without any threat of precarious leaks. Apart from toxicity, band-gap of CdS is about 2.40–2.50 eV, which results significant photon loss in short-wavelength range which restricts the overall performance of solar cells. Thin film of Zn(O,S) is a favorable contender to substitute CdS thin film as buffer layer for CuInGaSe2 (CIGS), CuInGa(S,Se)2 (CIGSSe), Cu2ZnSn(S,Se)4 (CZTSSe) Cu2ZnSnSe4 (CZTSe), Cu2ZnSnS4 (CZTS) thin film absorber material based photovoltaic due to it made from earth abundant, low cost, non-toxic materials and its ability to improve the efficiency of chalcogenide and kesterite based photovoltaic due to wider band-gap which results in reduction of absorption loss compared to CdS. In this review, apart from mentioning various deposition technique for Zn(O,S) thin films, changes in various properties i.e., optical, morphological, and opto-electrical properties of Zn(O,S) thin film deposited using various methods utilized for fabricating solar cell based on CIGS, CIGSSe, CZTS, CZTSe and CZTSSe thin films, the material has been evaluated for all the properties of buffer layer (high transparency for incident light, good conduction band lineup with absorber material, low interface recombination, high resistivity and good device stability).

Characteristics of TAA–ZnS Buffer Layer by Addition of Sodium Citrate for CIGS Thin Film Solar Cell

2020 ◽  
Vol 20 (11) ◽  
pp. 6659-6664
Author(s):  
Jeong Eun Park ◽  
So Mang Park ◽  
Eun Ji Bae ◽  
Donggun Lim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Buffer Layer ◽  
Deposition Rate ◽  
Sodium Citrate ◽  
Wide Bandgap ◽  
Buffer Layers ◽  
Thin Film Solar Cells ◽  
Citrate Concentration ◽  
Cigs Thin Film

Zinc Sulfide (ZnS) is an environmentally friendly material with a wide bandgap (Eg = 3.7 eV) comparable to that of cadmium sulfide (CdS) (2.4 eV), which is conventionally used as buffer layer in Cu(In,Ga)Se2 (CIGS) thin film solar cells. Conventional ZnS buffer layers are manufactured using thiourea, and, these layers possess a disadvantage in that their deposition rate is lower than that of CdS buffer layers. In this paper, thioacetamide (TAA) was used as a sulfur precursor instead of thiourea to increase the deposition rate. However, the ZnS thin films deposited with TAA exhibited a higher roughness than the ZnS thin films deposited with thiourea. Sodium citrate was therefore added to increase the uniformity and decrease the roughness of the former ZnS thin films. When sodium citrate was used, the thin films demonstrated a high transmittance via the controlled generation of particles. In the case of TAA–ZnS thin films doped with a sodium citrate concentration of 0.04 M, the granules on the surface disappeared and these thin films were denser than the TAA–ZnS thin films deposited with a lower sodium citrate concentration. It is considered that the rate of the ion-by-ion reaction increased due to the addition of sodium citrate, thereby resulting in a uniform thin film. Consequently, TAA–ZnS thin films with thicknesses of approximately 40 nm and high transmittances of 83% were obtained when a sodium citrate concentration of 0.04 M was used.

Effects of Buffer Layer on the Fabrication and Characteristics of Ferroelectric Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
Han Wook Song ◽  
Joon Sung Lee ◽  
Dae-Weon Kim ◽  
Kwang Ho Kim ◽  
Tae-Hyun Sung ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Buffer Layer ◽  
Sol Gel ◽  
Optimum Thickness ◽  
Si Substrate ◽  
Barrier Effects ◽  
Pzt Thin Film ◽  
Different Temperatures ◽  
Gel Technique

ABSTRACTMgO thin films were deposited on Si(100) substrate with different temperatures from 500 °C to 800 °C and different e-beam powers from 25W to 100W using e-beam evaporation method. Pb(Zr0.53Ti0.47)O3(PZT) thin films were deposited on MgO/Si(100) substrates with different drying temperatures from 190 °C to 310 °C using sol-gel technique. If there were no buffer layer between the PZT thin film and Si substrate, the peaks corresponding to perovskite PZT phase were not observed. However the buffer layer were inserted between the PZT thin film and Si substrate, it was possible to fabricate perovskite PZT phase. The barrier effects of MgO thin film to the interdiffusion of Pb were investigated by AES study. Optimum thickness of MgO at which PZT/MgO/Si structure shows P-E hysteresis was calculated, and the hysteresis was tested for PZT/MgO/Si structures with different MgO thicknesses.

Morphology of Epitaxially Grown BaRuO3 and CaRuO3 Thin Films by Laser Ablation

2007 ◽  
Vol 352 ◽  
pp. 315-318 ◽  
Author(s):  
Akihiko Ito ◽  
Hiroshi Masumoto ◽  
Takashi Goto
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Laser Ablation ◽  
Flat Surface ◽  
High Electrical Conductivity ◽  
Island Growth ◽  
Lattice Matching ◽  
Metallic Conduction ◽  
Good Lattice

Epitaxial BaRuO3 (BRO) and CaRuO3 (CRO) thin films were prepared on (001), (110) and (111) SrTiO3 (STO) single-crystal substrates by laser ablation, and their microstructures and anisotropy of electrical conductivity were investigated. The (205) (104), (110) and (009) oriented BRO thin films, and (001), (110) and (110) oriented CRO thin films were grown epitaxially on (001), (110) and (111) STO substrates with in-plain orientation, respectively. The (009) BRO thin film and (001) CRO thin film has a flat surface result from a good lattice matching to STO substrates. The (205) (104) BRO thin film and (111) CRO thin film exhibited orthogonal- and hexagonal-shaped texture, respectively. The (110) BRO thin film and (110) CRO thin film showed an island growth due to (110) surface feature of cubic perovskite structure. Epitaxial BRO and CRO thin films have a high electrical conductivity with a metallic conduction, the (111) CRO thin films exhibited the highest conductivity of 1.4×105 S·m-1.

Growth of epitaxial ZnO thin films on lattice-matched buffer layer: Application of InGaO3(ZnO)6 single-crystalline thin film

2005 ◽  
Vol 486 (1-2) ◽  
pp. 28-32 ◽  
Author(s):  
Yujiro Takeda ◽  
Kenji Nomura ◽  
Hiromichi Ohta ◽  
Hiroshi Yanagi ◽  
Toshio Kamiya ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Buffer Layer ◽  
Zno Thin Films ◽  
Single Crystalline ◽  
Lattice Matched

Hetero-Epitaxial Structures of Litao3 Thin Films

1995 ◽  
Vol 401 ◽  
Author(s):  
L.-S. Hung
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Optical Waveguide ◽  
Conducting Layer ◽  
Epitaxial Thin Films ◽  
Surface Polarity ◽  
Lattice Matching ◽  
Ion Channeling ◽  
Crystal Imperfection ◽  
Good Lattice

AbstractWe have grown epitaxial thin films of LiTaO3 on various substrates. LiTaO3 grows epitaxially on (111) GaAs and forms a waveguide with its underlying buffer layer of MgO, providing a desirable structure for monolithic integration. LiTaO3 grows on LiNbO3 with a buffer layer of magnesium niobate or magnesium tantalate to form an optical waveguide structure having good lattice matching and pronounced differences in refractive index. This heterostructure has the potential for reducing crystal imperfection of waveguides and improving optical confinement. We also describe a multilayer structure using an epitaxial conducting layer as a bottom electrode to grow a nonlinear optical waveguide on LiNbO3 for waveguide switching and modulation. Both light-absorbing metals and transparent metallic oxides are employed. Ion channeling and x-ray diffraction reveal high crystalline quality of the hetero-epitaxial structures. The influence of surface polarity, thermal expansion, and lattice matching on waveguiding LiTaO3 thin films is addressed.

Surface Cleaning and Passivation of Chalcogenide Thin Films Using S(NH4)2 Chemical Treatment

2014 ◽  
Vol 219 ◽  
pp. 320-323
Author(s):  
Marie Buffiere ◽  
Abdel Aziz El Mel ◽  
Nick Lenaers ◽  
Guy Brammertz ◽  
Armin E. Zaghi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cells ◽  
Buffer Layer ◽  
Surface Cleaning ◽  
Absorber Layer ◽  
Synthesis Process ◽  
Impurity Phases ◽  
Type Semiconductor ◽  
Conversion Efficiencies

Chalcopyrite ternary and kesterite quaternary thin films, such as Cu (In,Ga)(S,Se)2and Cu2ZnSn (S,Se)4generically referred to as CIGSSe and CZTSSe, respectively, have become the subject of considerable interest and study for semiconductor devices in recent years [1,2]. These materials are of particular interest for use as an absorber layer in photovoltaic devices. In thin film solar cells, the p-type CIGSSe or CZTSSe layer is combined with an n-type semiconductor thin film such as CdS buffer layer to form the p-n heterojunction of the device. The synthesis process of the CIGSSe or CZTSSe absorber layer requires temperatures ranging between 400 and 600 °C to form the photoactive chalcopyrite or kesterite phases [3,4]. During the synthesis process, the formation of trace amounts of binary/ternary compositions (i.e., undesirable secondary or impurity phases consisting of selenides, oxides, carbonates, etc.) may occur. These trace amounts of impurity phases may form at the nascent absorber surfaces, which could negatively affects the photovoltaic conversion efficiencies of solar cells [5-7]. Therefore, prior to the deposition of the CdS buffer layer, there is a need to clean the CIGSSe or CZTSSe surfaces to remove any possible traces of such impurities.

Preparation and Physical Properties of BI2TI2O7 Single Crystal Thin Film on SI (100) Substrate by Mocvd

1996 ◽  
Vol 446 ◽  
Author(s):  
Hong Wang ◽  
S. X. Shang ◽  
X. J. Su ◽  
Z. Wang ◽  
M. Wang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Physical Properties ◽  
Single Crystal ◽  
Frequency Dependence ◽  
Buffer Layer ◽  
Loss Tangent ◽  
Constant E ◽  
Mocvd Technique

AbstractInsulating thin films of Bi2Ti2O7 with (111) orientation have been prepared on silicon (100)–substrates at a temperature range of 480–550 °C by a MOCVD technique. The dielectric and C‐V properties were studied. The dielectric constant (ɛ) and loss tangent (tanδ) were found to be 180 and 0.01, respectively. The temperature and frequency dependence of dielectric constant were also measured. The Bi2Ti2O7 films are suitable to be used as a novel buffer layer and new insulating gate material in FET devices.

High Quality AlN Thin Films Deposited by Middle-Frequency Magnetron Sputtering at Room Temperature

2014 ◽  
Vol 787 ◽  
pp. 227-231 ◽  
Author(s):  
Chuan Li ◽  
Lin Shu ◽  
Li Jun He ◽  
Xing Zhao Liu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Residual Stress ◽  
Aluminum Nitride ◽  
Buffer Layer ◽  
Room Temperature ◽  
Residual Tensile Stress ◽  
High Quality ◽  
Polycrystalline Aluminum ◽  
Aln Buffer

A study of depositing high quality c-axis oriented polycrystalline aluminum nitride thin film at room temperature was presented. Aluminum nitride films were grown by mid-frequency (MF) reactive sputtering. Metallic aluminum target was used to deposit AlN films in Ar/N2 gas mixture. A 50nm thick of N-rich AlN buffer layer was deposited at the initial stage of sputtering process to improve the film quality. The composition, preferred orientation and residual stress of the films were analyzed by EDS, XRD and Raman microscope, respectively. The results showed that the N-rich AlN buffer layer improved the textured degree and reduced the residual stress significantly of the AlN thin films. The near stoichiometric AlN thin film with highly textured degree was obtained. The FWHM value of the rocking curve for (0002) diffraction peak was about 1.6°, and the residual tensile stress was about 500MPa. The piezoelectric d33 coefficient increased with the decreasing of FWHM value, and the highest d33 coefficient of 3.6 pF/C was obtained.

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