A two-dimensional hot-spot mixer model for phonon-cooled hot electron bolometers

2001 ◽  
Vol 11 (1) ◽  
pp. 179-182 ◽  
Author(s):  
H.F. Merkel ◽  
P. Khosropanah ◽  
S. Cherednichenko ◽  
K.S. Yngvesson ◽  
A. Adam ◽  
...  
2000 ◽  
Vol 85 (8) ◽  
pp. 1718-1721 ◽  
Author(s):  
M. E. Gershenson ◽  
Yu. B. Khavin ◽  
D. Reuter ◽  
P. Schafmeister ◽  
A. D. Wieck

Author(s):  
Zhongxin Wang ◽  
Guodong Wang ◽  
Xintong Liu ◽  
Shouzhi Wang ◽  
Tailin Wang ◽  
...  

Gallium nitride (GaN) and aluminium nitride (AlN), as the representatives of new generation of wide band gap semiconductor materials, have become a hot spot in the semiconductor field due to...


2019 ◽  
Vol 7 (33) ◽  
pp. 19258-19268 ◽  
Author(s):  
Indranil Mondal ◽  
Song Yi Moon ◽  
Hyunhwa Lee ◽  
Heeyoung Kim ◽  
Jeong Young Park

Optimization of structural organization between metal and semiconductor electrocatalyst reveals the hot role of quasi-epitaxial heterojunction in hot electron transfer for synergistic photocatalysis.


2011 ◽  
Vol 470 ◽  
pp. 14-19
Author(s):  
Yoshinari Kamakura ◽  
Tomofumi Zushi ◽  
Takanobu Watanabe ◽  
Nobuya Mori ◽  
Kenji Taniguchi

Hot phonon generation and its impact on the current conduction in a nanoscale Si-device are investigated using a Monte Carlo simulation technique. In the quasi-ballistic transport regime, electrons injected from the source lose their energies mainly by emitting optical phonons in the drain. Due to the slow group velocity of the optical phonons, the efficiency of the heat dissipation is so poor that a region with a nonequilibrium phonon distribution, i.e., a hot spot, is created. In this study, we have implemented the hot phonon effect in an ensemble Monte Carlo simulator for the electron transport, and carried out the steady state simulations. Although it is confirmed that the optical phonon temperature in the hot spot is larger than that of acoustic phonons by > 100 K, the electron current density is not significantly affected. The local heating would degrade the hot electron cooling efficiency and the parasitic resistance in the drain, but they have a minor impact on the quasi-ballistic electron transport from the source to the drain.


2003 ◽  
Vol 82 (5) ◽  
pp. 748-750 ◽  
Author(s):  
S. A. Vitusevich ◽  
S. V. Danylyuk ◽  
N. Klein ◽  
M. V. Petrychuk ◽  
A. Yu. Avksentyev ◽  
...  

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