Buffer layers for high-quality epitaxial YBCO films on Si

1991 ◽  
Vol 1 (1) ◽  
pp. 67-73 ◽  
Author(s):  
D.K. Fork ◽  
D.B. Fenner ◽  
A. Barrera ◽  
J.M. Phillips ◽  
T.H. Geballe ◽  
...  
Keyword(s):  
Buffer Layers ◽  
High Quality ◽  
Ybco Films

Experimental Design and Investigation of Novel Pulsed Laser Deposited Structures for YBCO Based Coated Conductors

2013 ◽  
Vol 1579 ◽  
Author(s):  
Francesco Rizzo ◽  
Antonella Mancini ◽  
Angelo Vannozzi ◽  
Andrea Augieri ◽  
Achille Angrisani Armenio ◽  
...  
Keyword(s):  
Single Crystal ◽  
Ybco Film ◽  
Pulsed Laser ◽  
Temperature Stability ◽  
Coated Conductors ◽  
Buffer Layers ◽  
High Quality ◽  
Ybco Films ◽  
Metallic Substrates ◽  
Large Current

ABSTRACTThe study of high quality YBa2Cu3O7-x (YBCO) based superconducting films is a fundamental issue to be addressed when dealing with the realization of efficient coated conductors with large current carrying capacity. In this perspective the investigation of innovative buffer layers structures able to allow epitaxial YBCO film grow on metallic substrates and to prevent contamination and degradation issues holds a central role.In this work we thoroughly study the properties of YBCO films grown by means of pulsed lasers deposition on CeO2 template on both bare MgO single crystal and MgO-homoepitaxial/MgO single crystal substrates. Due to its high chemical and temperature stability the MgO reduces the oxygen diffusion effects. On the other hand, the CeO2 layer, pulsed laser deposited, prevents the YBCO film from metallic contamination and facilitates its epitaxial growth. Morphology and crystalline structure of buffer layers and superconductors film are investigated by using scanning electron microscopy (SEM), X-ray and electrons back-scattered diffraction techniques (XRD and EBSD).YBCO films show good critical temperature values (Tc > 87K) with sharp transitions. These encouraging results make our structures promising candidates in the realization of high quality YBCO based coated conductors.

Chemical Solution Deposition of Lanthanum Zirconate Buffer Layers on Biaxially Textured Ni–1.7% Fe–3% W Alloy Substrates for Coated-conductor Fabrication

2002 ◽  
Vol 17 (6) ◽  
pp. 1543-1549 ◽  
Author(s):  
S. Sathyamurthy ◽  
M. Paranthaman ◽  
T. Aytug ◽  
B. W. Kang ◽  
P. M. Martin ◽  
...  
Keyword(s):  
Sol Gel ◽  
Rf Sputtering ◽  
Cube Texture ◽  
Dip Coating ◽  
Buffer Layers ◽  
Lanthanum Zirconate ◽  
Solution Deposition ◽  
Ybco Films ◽  
Current Densities ◽  
Gel Processing

Sol-gel processing of La2Zr2O7 (LZO) buffer layers on biaxially textured Ni–1.7% Fe–3% W alloy substrates using a continuous reel-to-reel dip-coating unit has been studied. The epitaxial LZO films obtained have a strong cube texture and uniform microstructure. The effects of increasing the annealing speed on the texture, microstructure, and carbon content retained in the film were studied. On top of the LZO films, epitaxial layers of yttria-stabilized zirconia and Ceria (CeO2) were deposited using rf sputtering, and YBa2Cu3Ox (YBCO) films were then deposited using pulsed laser deposition. Critical current densities (Jc) of 1.9 MA/cm2 at 77 K and self-field and 0.34 MA/cm2at 77 K and 0.5 T have been obtained on these films. These values are comparable to those obtained on YBCO films deposited on all-vacuum deposited buffer layers and the highest ever obtained using solution seed layers.

Precisely determined temperature window size for the growth of high quality c-axis oriented YBCO films by photo-assisted MOCVD

2008 ◽  
Vol 468 (21) ◽  
pp. 2213-2218 ◽  
Author(s):  
Guoxing Li ◽  
Xiujun Fang ◽  
Lei Zhao ◽  
Shanwen Li ◽  
Zhongmin Gao ◽  
...  
Keyword(s):  
Window Size ◽  
High Quality ◽  
Ybco Films ◽  
Temperature Window

YBa2Cu3O7 Thin Films on Polycrystalline Diamond Films with Buffer Layers

1992 ◽  
Vol 275 ◽  
Author(s):  
G. Cui ◽  
C. P. Beetz ◽  
B. A. Lincoln ◽  
P. S. Kirlin
Keyword(s):  
Thin Films ◽  
Diamond Films ◽  
Rf Sputtering ◽  
Polycrystalline Diamond ◽  
Fast Response ◽  
Buffer Layers ◽  
Multichip Modules ◽  
Ir Detectors ◽  
Ybco Films ◽  
First Time

ABSTRACTThe deposition of in-situ YBa2CU3O7-δ Superconducting films on polycrystalline diamond thin films has been demonstrated for the first time. Three different composite buffer layer systems have been explored for this purpose: (1) Diamond/Zr/YSZ/YBCO, (2) Diamond/Si3N4/YSZ/YBCO, and (3) Diamond/SiO2/YSZ/YBCO. The Zr was deposited by dc sputtering on the diamond films at 450 to 820 °C. The YSZ was deposited by reactive on-axis rf sputtering at 680 to 750 °C. The Si3N4 and SiO2 were also deposited by on-axis rf sputtering at 400 to 700 °C. YBCO films were grown on the buffer layers by off-axis rf sputtering at substrate temperatures between 690 °C and 750 °C. In all cases, the as-deposited YBCO films were superconducting above 77 K. This demonstration enables the fabrication of low heat capacity, fast response time bolometric IR detectors and paves the way for the use of HTSC on diamond for interconnect layers in multichip modules.

Laser ablated YBCO films on buffer layers of YSZ and SrTiO3deposited on sapphire and MgO substrates

1991 ◽  
Vol 4 (1S) ◽  
pp. S268-S270 ◽  
Author(s):  
M Schieber ◽  
Y Ariel ◽  
M Schwartz ◽  
M Levinsky ◽  
Sh Shukrun ◽  
...  
Keyword(s):  
Buffer Layers ◽  
Ybco Films

In-situ deposition of superconducting YBCO films on Si with ceramic buffer layers

1993 ◽  
Vol 1 (3-6) ◽  
pp. 815-826 ◽  
Author(s):  
J.Y. Juang ◽  
K.H. Wu ◽  
T.C. Lai ◽  
M.H. Lee ◽  
M.C. Hseih ◽  
...  
Keyword(s):  
Buffer Layers ◽  
Ybco Films ◽  
In Situ Deposition

Low Pressure MOCVD Growth and Characterization of GaAs and InP on Silicon Substrates

1988 ◽  
Vol 126 ◽  
Author(s):  
M. Razeghi ◽  
M. Defour ◽  
F. Omnes ◽  
J. Nagle ◽  
P. Maurel ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Low Pressure ◽  
Buffer Layers ◽  
Silicon Substrates ◽  
Misfit Dislocations ◽  
X Ray Diffraction ◽  
High Quality ◽  
Mocvd Growth ◽  
Vapor Deposition Technique ◽  
Low Pressure Mocvd

ABSTRACTHigh quality GaAs and InP have been grown on silicon substrates, using low pressure metalorganic chemical vapor deposition technique. The growth temperature is 550°C and the growth rate 100 A/min.Photoluminescence, X-ray diffraction and electrochemical profiling verified the high quality of these layers. The use of superlattices as buffer layers, (GaAs/GaInP) in the case of GaAs/Si and (GaInAsP/InP) in the case of InP/Si, decreased the amount of misfit dislocations in the epitaxial layer. Carrier concentrations as low as 5.1015 cm−3 have been measured by electrochemical profiling.

scholarly journals Cubic InGaN Grown by MOCVD

1999 ◽  
Vol 4 (S1) ◽  
pp. 239-243
Author(s):  
J.B. Li ◽  
Hui Yang ◽  
L.X. Zheng ◽  
D.P. Xu ◽  
Y.T. Wang
Keyword(s):  
Room Temperature ◽  
Emission Peak ◽  
Buffer Layers ◽  
Cubic Phase ◽  
Yellow Luminescence ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Cubic Gan ◽  
Pl Emission

We report on the growth of high-quality cubic phase InGaN on GaAs by MOCVD. The cubic InGaN layers are grown on cubic GaN buffer layers on GaAs (001) substrates. The surface morphology of the films are mirror-like. The cubic nature of the InGaN films is obtained by X-ray diffraction (XRD) measurements. The InGaN layers show strong photoluminescence (PL) at room temperature. Neither emission peak from wurtzite GaN nor yellow luminescence is observed in our films. The highest In content as determined by XRD is about 17% with an PL emission wavelength of 450 nm. The FWHM of the cubic InGaN PL peak are 153 meV and 216 meV for 427 nm and 450 nm emissions, respectively. It is found that the In compositions determined from XRD are not in agreement with those estimated from PL measurements. The reasons for this disagreement are discussed.

High quality InAsSb grown on InP substrates using AlSb∕AlAsSb buffer layers

2008 ◽  
Vol 92 (6) ◽  
pp. 062111 ◽  
Author(s):  
Bing-Ruey Wu ◽  
Chichih Liao ◽  
K. Y. Cheng
Keyword(s):  
Buffer Layers ◽  
High Quality ◽  
Inp Substrates
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