Field effect transistor based on a bi-crystal grain boundary Josephson junction

1993 ◽  
Vol 3 (1) ◽  
pp. 2925-2928 ◽  
Author(s):  
Z.G. Ivanov ◽  
E.A. Stepantsov ◽  
A.Ya. Tzalenchuk ◽  
R.I. Shekhter ◽  
T. Claeson
Keyword(s):  
Grain Boundary ◽  
Josephson Junction ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Epitaxial Al-InAs Heterostructures as Platform for Josephson Junction Field-Effect Transistor Logic Devices

2021 ◽  
pp. 1-6
Author(s):  
Feng Wen ◽  
Joseph Yuan ◽  
Kaushini S. Wickramasinghe ◽  
William Mayer ◽  
Javad Shabani ◽  
...  
Keyword(s):  
Josephson Junction ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Logic Devices ◽  
Effect Transistor

scholarly journals Influence of charge accumulation at the grain boundary on the electrical behavior of a ferroelectric field-effect transistor

AIP Advances ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 105027
Author(s):  
W. X. Guo ◽  
P. F. Tan ◽  
X. P. Ouyang ◽  
B. Li ◽  
H. X. Guo ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Charge Accumulation ◽  
Electrical Behavior ◽  
Effect Transistor

scholarly journals Optimization of electrical conductivity of SnS thin film of 0.2 < t ≤ 0.4 μm thicknes for field effect transistor application

2021 ◽  
Vol 67 (2 Mar-Apr) ◽  
pp. 263
Author(s):  
T. O. Daniel ◽  
U. E. Uno ◽  
K. U. Isah ◽  
U. Ahmadu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Conductivity ◽  
Grain Size ◽  
Grain Boundary ◽  
Film Thickness ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

This study is focused on the investigation of SnS thin film for transistor application. Electron trap which is associated with grain boundary effect affects the electrical conductivity of SnS semiconductor thin film thereby militating the attainment of the threshold voltage required for transistor operation. Grain size and grain boundary is a function of a semiconductor’s thickness. SnS semiconductor thin films of 0.20, 0.25, 0.30, 0.35, 0.40 μm were deposited using aerosol assisted chemical vapour deposition on glass substrates. Profilometry, Scanning electron microscope, Energy dispersive X-ray spectroscopy and hall measurement were used to characterise the composition, microstructure and electrical properties of the SnS thin film.  SnS thin films were found to consist of Sn and S elements whose composition varied with increase in thickness. The film conductivity was found to vary with grain size and grain boundary which is a function of the film thickness. The SnS film of 0.4 μm thickness shows optimal grain growth with a grain size of 130.31 nm signifying an optimum for the as deposited SnS films as the larger grains reduces the number of grain boundaries and charge trap density which allows charge carriers to move freely in the lattice thereby causing a reduction in resistivity and increase in conductivity of the films which is essential in obtaining the threshold voltage for a transistor semiconductor channel layer operation. The carrier concentration of due to low resistivity of 3.612 ×105 Ωcm of 0.4 μm SnS thin film thickness is optimum and favours the attainment of the threshold voltage for a field effect transistor operation hence the application of SnS thin film as a semiconductor channel layer in a field effect transistor.

Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer

2010 ◽  
Vol E93-C (5) ◽  
pp. 540-545 ◽  
Author(s):  
Dong Seup LEE ◽  
Hong-Seon YANG ◽  
Kwon-Chil KANG ◽  
Joung-Eob LEE ◽  
Jung Han LEE ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate

2014 ◽  
Vol E97.C (7) ◽  
pp. 677-682
Author(s):  
Sung YUN WOO ◽  
Young JUN YOON ◽  
Jae HWA SEO ◽  
Gwan MIN YOO ◽  
Seongjae CHO ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Biosensor Based on Ion-Sensitive Field-Effect Transistor Using Minimum Contact to Float-ing Gate

2019 ◽  
Vol 24 (4) ◽  
pp. 407-414
Author(s):  
Oksana V. Gubanova ◽  
◽  
Evgeniy V. Kuznetsov ◽  
Elena N. Rybachek ◽  
Alexander N. Saurov ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor
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