Direct extraction of the series equivalent circuit parameters for the small-signal model of SOI MOSFETs

1997 ◽  
Vol 7 (12) ◽  
pp. 408-410 ◽  
Author(s):  
J.P. Raskin ◽  
G. Dambrine ◽  
R. Gillon
Keyword(s):  
Equivalent Circuit ◽  
Small Signal ◽  
Direct Extraction ◽  
Signal Model ◽  
Small Signal Model ◽  
Equivalent Circuit Parameters

Small- and large-signal modeling of InP HBTs in transferred-substrate technology

2014 ◽  
Vol 6 (3-4) ◽  
pp. 243-251 ◽  
Author(s):  
Tom K. Johansen ◽  
Matthias Rudolph ◽  
Thomas Jensen ◽  
Tomas Kraemer ◽  
Nils Weimann ◽  
...  
Keyword(s):  
Millimeter Wave ◽  
Parameter Extraction ◽  
Small Signal ◽  
Current Crowding ◽  
Signal Modeling ◽  
Large Signal ◽  
Signal Model ◽  
Small Signal Model ◽  
Starting Point ◽  
Equivalent Circuit Parameters

In this paper, the small- and large-signal modeling of InP heterojunction bipolar transistors (HBTs) in transferred substrate (TS) technology is investigated. The small-signal equivalent circuit parameters for TS-HBTs in two-terminal and three-terminal configurations are determined by employing a direct parameter extraction methodology dedicated to III–V based HBTs. It is shown that the modeling of measured S-parameters can be improved in the millimeter-wave frequency range by augmenting the small-signal model with a description of AC current crowding. The extracted elements of the small-signal model structure are employed as a starting point for the extraction of a large-signal model. The developed large-signal model for the TS-HBTs accurately predicts the DC over temperature and small-signal performance over bias as well as the large-signal performance at millimeter-wave frequencies.

Direct Extraction of the Nonquasi-Static Small-Signal Model of MOSFET's

1998 ◽  
Author(s):  
J.P. Raskin ◽  
R. Gillon ◽  
G. Dambrine ◽  
D. Vanhoenacker
Keyword(s):  
Small Signal ◽  
Direct Extraction ◽  
Signal Model ◽  
Small Signal Model

scholarly journals A New GaN HEMT Small-Signal Model Considering Source via Effects for 5G Millimeter-Wave Power Amplifier Design

2021 ◽  
Vol 11 (19) ◽  
pp. 9120
Author(s):  
Jihoon Kim
Keyword(s):  
Equivalent Circuit ◽  
Millimeter Wave ◽  
Power Amplifier ◽  
High Electron ◽  
Small Signal ◽  
Signal Model ◽  
Gan Hemt ◽  
Small Signal Model ◽  
Gan Hemts ◽  
Amplifier Design

A new gallium nitride (GaN) high electron mobile transistor (HEMT) small-signal model is proposed considering source via effects. In general, GaN HEMTs adopt a source via structure to reduce device degradation due to self-heating. In this paper, the modified drain-source capacitance (Cds) circuit considering the source via structure is proposed. GaN HEMTs fabricated using a commercial 0.15 μm GaN HEMT process are measured with a 67 GHz vector network analyzer (VNA). The fabricated device is an individual source via (ISV) type. As a result, it is difficult to predict the measured S12 in the conventional small-signal model equivalent circuit. This causes errors in maximum stable gain/maximum available gain (MSG/MAG) and stability factor (K), which are important for circuit design. This paper proposes a small-signal equivalent circuit that adds the drain-source inductance to the drain-source capacitance considering the source via structure. The proposed equivalent circuit better reproduces the measured S12 without compromising the accuracy of other S-parameters up to 67 GHz and improves the accuracy of MSG/MAG and K. It is expected that the proposed model can be utilized in a large-signal model for 5G millimeter-wave GaN HEMT power amplifier design in the future.

Direct Extraction Method of InP HBT Small-Signal Model

2013 ◽  
Vol 347-350 ◽  
pp. 1621-1624
Author(s):  
Hai Yan Lu ◽  
Wei Cheng ◽  
Gang Chen ◽  
Tang Sheng Chen ◽  
Chen Chen
Keyword(s):  
Experimental Validation ◽  
Extraction Procedure ◽  
Accurate Method ◽  
Model Parameters ◽  
Small Signal ◽  
Direct Extraction ◽  
Signal Model ◽  
Small Signal Model ◽  
Internal Parameters ◽  
Parasitic Parameters

An accurate method for extracting the elements of InP HBT small-signal model parameters is proposed in this paper. The method can accurately resolve the most important internal parameters from the measured S-parameters, and is not sensitive to the values of parasitic parameters. The initial values of the parasitic are extracted by using a set of test structure, and the intrinsic elements determined by using the analytical method are described as functions of the parasitic elements. The extraction procedure uses a set of closed-form expressions derived without any approximation. An experimental validation is carried out on three HBT devices and satisfactory results are obtained up to 20 GHz.

scholarly journals Design of carbon nanotube field effect transistor (CNTFET) small signal model

2020 ◽  
Vol 10 (1) ◽  
pp. 180
Author(s):  
Soheli Farhana
Keyword(s):  
Carbon Nanotube ◽  
Equivalent Circuit ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Equivalent Circuit Model ◽  
Small Signal ◽  
Signal Model ◽  
Small Signal Model ◽  
S Parameters ◽  
Effect Transistor

<span lang="EN-US">The progress of Carbon Nanotube Field Effect Transistor (CNTFET) devices has facilitated the trimness of mobile phones, computers and all other electronic devices. CNTFET devices contribute to model these electronics instruments that require designing the devices. This research consists of the design and verification of the CNTFET device's small signal model. Scattering parameters (S-parameters) is extracted from the CNTFET model to construct equivalent small model circuit. Current sources, capacitors and resistors are involved to evaluate this equivalent circuit. S-parameters and small signal models are elaborated to analyze using a technique to form the small signal equivalent circuit model. In this design modeling process, at first intrinsic device's Y-parameters are determined. After that series of impedances are calculated. At last, Y-parameters model are transformed to add parasitic capacitances. The analysis result shows the acquiring high frequency performances are obtained from this equivalent circuit.</span>

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