Monolithic integration of AlGaAs/GaAs HBT and GaAs junction-gate floated electron channel field effect transistor using selective MOCVD growth

Hyunchol Shin;  Jeong-Hwan Son;  Young-Se Kwon

doi:10.1109/75.535831

Monolithic integration of AlGaAs/GaAs HBT and GaAs junction-gate floated electron channel field effect transistor using selective MOCVD growth

IEEE Microwave and Guided Wave Letters ◽

10.1109/75.535831 ◽

1996 ◽

Vol 6 (9) ◽

pp. 317-319 ◽

Cited By ~ 2

Author(s):

Hyunchol Shin ◽

Jeong-Hwan Son ◽

Young-Se Kwon

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Monolithic Integration ◽

Electron Channel ◽

Mocvd Growth ◽

Effect Transistor

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Monolithic integration of GaAs photoconductors with a field-effect transistor

Electronics Letters ◽

10.1049/el:19860518 ◽

1986 ◽

Vol 22 (14) ◽

pp. 753 ◽

Cited By ~ 7

Author(s):

D.K.W. Lam ◽

B.A. Syrett ◽

M.G. Stubbs

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Monolithic Integration ◽

Effect Transistor

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Monolithic integration of a very low threshold GaInAsP laser and metal‐insulator‐semiconductor field‐effect transistor on semi‐insulating InP

Applied Physics Letters ◽

10.1063/1.93226 ◽

1982 ◽

Vol 40 (8) ◽

pp. 643-645 ◽

Cited By ~ 29

Author(s):

U. Koren ◽

K. L. Yu ◽

T. R. Chen ◽

N. Bar‐Chaim ◽

S. Margalit ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Monolithic Integration ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Low Threshold ◽

Effect Transistor

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Numerical Simulation on the Device Structure of GaAs Floated Electron Channel Field-Effect Transistor

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.1228 ◽

1995 ◽

Vol 34 (Part 1, No. 2B) ◽

pp. 1228-1231

Author(s):

Yoon-Jong Lee ◽

Chang-Tae Kim ◽

Song-Cheol Hong ◽

Young-Se Kwon ◽

Hee-Koo Yoon ◽

...

Keyword(s):

Numerical Simulation ◽

Field Effect ◽

Field Effect Transistor ◽

Device Structure ◽

Electron Channel ◽

Effect Transistor

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Planar monolithic integration of a GaAs photoconductor and a GaAs field-effect transistor

Electronics Letters ◽

10.1049/el:19860135 ◽

1986 ◽

Vol 22 (4) ◽

pp. 193 ◽

Cited By ~ 9

Author(s):

D. Decoster ◽

J.P. Vilcot ◽

M. Constant ◽

J. Ramdani ◽

H. Verriele ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Monolithic Integration ◽

Effect Transistor

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Monolithic integration of a photodiode and a field‐effect transistor on a GaAs substrate by molecular beam epitaxy

Applied Physics Letters ◽

10.1063/1.93946 ◽

1983 ◽

Vol 42 (4) ◽

pp. 380-382 ◽

Cited By ~ 22

Author(s):

O. Wada ◽

S. Miura ◽

M. Ito ◽

T. Fujii ◽

T. Sakurai ◽

...

Keyword(s):

Molecular Beam Epitaxy ◽

Gaas Substrate ◽

Field Effect ◽

Molecular Beam ◽

Field Effect Transistor ◽

Monolithic Integration ◽

Effect Transistor

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Terahertz plasmon photoresponse in a density modulated two-dimensional electron channel of a GaAs∕AlGaAs field-effect transistor

Applied Physics Letters ◽

10.1063/1.2800369 ◽

2007 ◽

Vol 91 (16) ◽

pp. 163507 ◽

Cited By ~ 33

Author(s):

G. R. Aizin ◽

D. V. Fateev ◽

G. M. Tsymbalov ◽

V. V. Popov

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Two Dimensional ◽

Dimensional Electron ◽

Electron Channel ◽

Effect Transistor

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Monolithic Integration of GaN Nanowire Light-Emitting Diode With Field Effect Transistor

IEEE Electron Device Letters ◽

10.1109/led.2019.2895846 ◽

2019 ◽

Vol 40 (3) ◽

pp. 427-430 ◽

Cited By ~ 12

Author(s):

Matthew Hartensveld ◽

Jing Zhang

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Light Emitting Diode ◽

Monolithic Integration ◽

Light Emitting ◽

Gan Nanowire ◽

Effect Transistor

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Planar monolithic integration of a Schottky photodiode and a GaAs field-effect transistor for 0.8 μm-wavelength applications

Electronics Letters ◽

10.1049/el:19850620 ◽

1985 ◽

Vol 21 (19) ◽

pp. 878 ◽

Cited By ~ 4

Author(s):

H. Verriele ◽

S. Maricot ◽

M. Constant ◽

J. Ramdani ◽

D. Decoster

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Monolithic Integration ◽

Effect Transistor ◽

Schottky Photodiode

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Plasmon Enhanced Electron Drag and Terahertz Photoconductance in a Grating-Gated Field-Effect Transistor with Two-Dimensional Electron Channel

10.21236/ada447174 ◽

2006 ◽

Author(s):

Gregory Aizin

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Two Dimensional ◽

Dimensional Electron ◽

Electron Channel ◽

Electron Drag ◽

Effect Transistor

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Plasmon enhanced electron drag and terahertz photoconductance in a grating-gated field-effect transistor with two-dimensional electron channel

Applied Physics Letters ◽

10.1063/1.2358836 ◽

2006 ◽

Vol 89 (14) ◽

pp. 143512 ◽

Cited By ~ 33

Author(s):

G. R. Aizin ◽

V. V. Popov ◽

O. V. Polischuk

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Two Dimensional ◽

Dimensional Electron ◽

Electron Channel ◽

Electron Drag ◽

Effect Transistor

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