Monolithic fabrication of 2 /spl times/ 2 crosspoint switches in InGaAs-InAlGaAs multiple quantum wells using quantum-well intermixing

2001 ◽  
Vol 13 (12) ◽  
pp. 1292-1294 ◽  
Author(s):  
B.C. Qiu ◽  
X.F. Liu ◽  
M.L. Ke ◽  
H.K. Lee ◽  
A.C. Bryce ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Quantum Well Intermixing

Optimized In composition and quantum well thickness for yellow-emitting (Ga,In)N/GaN multiple quantum wells

2016 ◽  
Vol 434 ◽  
pp. 25-29 ◽  
Author(s):  
Kaddour Lekhal ◽  
Sakhawat Hussain ◽  
Philippe De Mierry ◽  
Philippe Vennéguès ◽  
Maud Nemoz ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum

Ultraviolet emission efficiency enhancement of a-plane AlGaN/GaN multiple-quantum-wells with increasing quantum well thickness

2012 ◽  
Vol 100 (26) ◽  
pp. 261901 ◽  
Author(s):  
Huei-Min Huang ◽  
Chiao-Yun Chang ◽  
Yu-Pin Lan ◽  
Tien-Chang Lu ◽  
Hao-Chung Kuo ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Efficiency Enhancement ◽  
Ultraviolet Emission ◽  
Emission Efficiency

Photoluminescence and Raman Scattering from (CdSe)m,(ZnSe)n-ZnSe Multiple Quantum Wells Under Hydrostatic Pressure

1995 ◽  
Vol 406 ◽  
Author(s):  
J. Q. Zhang ◽  
Z. X. Liu ◽  
Z. P. Wang ◽  
H. X. Han ◽  
G. H. Li ◽  
...  
Keyword(s):  
High Pressure ◽  
Hydrostatic Pressure ◽  
Quantum Well ◽  
Raman Scattering ◽  
Quantum Wells ◽  
Multiple Quantum Well ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Phonon Modes ◽  
Quantum Well Structure

AbstractThe photoluminescence and Raman scattering of {|(CdSe)1 (ZnSe)3|14-(ZnSe)130} × 5 multiple quantum well structure have been investigated at 77 K and under hydrostatic pressure up to 7 GPa. Resonant excitations have been accomplished by turning the electronic levels under hydrostatic high pressure. Two kind of excitons and ZnSe-like LO phonon modes as well as their pressure behavior are presented.

High-temperature crystallinity restoring layers and their optimal positions for ultra-thick InGaN/GaN multiple-quantum-well structures

CrystEngComm ◽  
2021 ◽  
Author(s):  
Yu Guo ◽  
Huanqing Chen ◽  
Rui Lang ◽  
Menglai Lei ◽  
Hua Zong ◽  
...  
Keyword(s):  
High Temperature ◽  
Low Temperature ◽  
Quantum Well ◽  
Quantum Wells ◽  
Multiple Quantum Well ◽  
Crystal Quality ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Progressive Deterioration

Maintaining crystal quality during the growth of very thick multiple-quantum-wells is challenging due to the progressive deterioration in thick low-temperature barriers. The insertion of several high-temperature crystallinity restoring (CR) layers...

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