Survey of atomic transitions for absolute frequency locking of lasers for lightwave systems

1991 ◽  
Vol 3 (5) ◽  
pp. 484-486 ◽  
Author(s):  
A.J. Lucero ◽  
Y.C. Chung ◽  
R.W. Tkach
Keyword(s):  
Absolute Frequency ◽  
Frequency Locking ◽  
Atomic Transitions

Dither-free absolute frequency locking of a 1.3 mu m DFB laser on /sup 87/Rb

1992 ◽  
Vol 4 (4) ◽  
pp. 327-329 ◽  
Author(s):  
R. Boucher ◽  
M. Breton ◽  
N. Cyr ◽  
M. Tetu
Keyword(s):  
Absolute Frequency ◽  
Frequency Locking ◽  
Dfb Laser

WDM coherent star network with absolute frequency reference

1988 ◽  
Vol 24 (21) ◽  
pp. 1313 ◽  
Author(s):  
Y.C. Chung ◽  
K.J. Pollock ◽  
P.J. Fitzgerald ◽  
B. Glance ◽  
R.W. Tkach ◽  
...  
Keyword(s):  
Absolute Frequency ◽  
Star Network ◽  
Frequency Reference

Frequency locking using cascaded fibre Bragg gratings in OFDM systems

1996 ◽  
Vol 32 (12) ◽  
pp. 1120 ◽  
Author(s):  
C.S. Park ◽  
G.Y. Lyu ◽  
D.H. Lee
Keyword(s):  
Bragg Gratings ◽  
Ofdm Systems ◽  
Frequency Locking ◽  
Fibre Bragg Gratings

scholarly journals An 18.8–33.9 GHz, 2.26 mW Current-Reuse Injection-Locked Frequency Divider for Radar Sensor Applications

Sensors ◽  
2021 ◽  
Vol 21 (7) ◽  
pp. 2551
Author(s):  
Kwang-Il Oh ◽  
Goo-Han Ko ◽  
Jeong-Geun Kim ◽  
Donghyun Baek
Keyword(s):  
Supply Voltage ◽  
Cmos Technology ◽  
Frequency Divider ◽  
Oxide Semiconductor ◽  
Center Frequency ◽  
Radar Sensor ◽  
Frequency Locking ◽  
Current Reuse ◽  
Sensor Applications ◽  
Locking Range

An 18.8–33.9 GHz, 2.26 mW current-reuse (CR) injection-locked frequency divider (ILFD) for radar sensor applications is presented in this paper. A fourth-order resonator is designed using a transformer with a distributed inductor for wideband operating of the ILFD. The CR core is employed to reduce the power consumption compared to conventional cross-coupled pair ILFDs. The targeted input center frequency is 24 GHz for radar application. The self-oscillated frequency of the proposed CR-ILFD is 14.08 GHz. The input frequency locking range is from 18.8 to 33.8 GHz (57%) at an injection power of 0 dBm without a capacitor bank or varactors. The proposed CR-ILFD consumes 2.26 mW of power from a 1 V supply voltage. The entire die size is 0.75 mm × 0.45 mm. This CR-ILFD is implemented in a 65 nm complementary metal-oxide semiconductor (CMOS) technology.

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