Improvement in dark current characteristics and long-term stability of mesa InGaAs/InP p-i-n photodiodes with two-step SiN/sub x/ surface passivation

1991 ◽  
Vol 3 (10) ◽  
pp. 934-936 ◽  
Author(s):  
R.-T. Huang ◽  
D. Renner
Keyword(s):  
Dark Current ◽  
Surface Passivation ◽  
Term Stability ◽  
Long Term Stability ◽  
Current Characteristics

Long-Term Stability of Aluminum Oxide Based Surface Passivation Schemes Under Illumination at Elevated Temperatures

2017 ◽  
Vol 7 (5) ◽  
pp. 1197-1202 ◽  
Author(s):  
Tim Niewelt ◽  
Wolfram Kwapil ◽  
Marisa Selinger ◽  
Armin Richter ◽  
Martin C. Schubert
Keyword(s):  
Aluminum Oxide ◽  
Elevated Temperatures ◽  
Surface Passivation ◽  
Term Stability ◽  
Long Term Stability

A Novel Surface Preparation and Post-Etch Removal Technique for InGaAs Sidewalls

1997 ◽  
Vol 477 ◽  
Author(s):  
S. A. Tabatabaei ◽  
G. A. Porkolab ◽  
S. Agarwala ◽  
F. G. Johnson ◽  
S. A. Merritt ◽  
...  
Keyword(s):  
Current Density ◽  
Dark Current ◽  
High Speed ◽  
Surface Preparation ◽  
Reverse Bias Voltage ◽  
Dark Current Density ◽  
Term Stability ◽  
Long Term Stability ◽  
Removal Technique

ABSTRACTThis paper describes in detail a surface preparation, and post-etch removal technique developed for InGaAs sidewalls. It illustrates the results demonstrating the effect of sidewall post-etch, surface preparation, and surface passivation on the performance of high speed InGaAs detectors. Dark current density for circular diodes with a diameter size varying between 10 and 100 μm was measured at a reverse bias voltage of −5 V. The effectiveness of various surface preparation techniques was studied by measuring the immediate improvement in dark current density, as well as its long-term stability. The benefits of this new technique compared to other techniques we have investigated include improved device characteristics, long-term stability, as well as a much less critical process to achieve optimum surface properties.

scholarly journals Long term stability of c-Si surface passivation using corona charged SiO 2

2017 ◽  
Vol 412 ◽  
pp. 657-667 ◽  
Author(s):  
Ruy S. Bonilla ◽  
Christian Reichel ◽  
Martin Hermle ◽  
Phillip Hamer ◽  
Peter R. Wilshaw
Keyword(s):  
Surface Passivation ◽  
Term Stability ◽  
Long Term Stability
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