A monolithically integrated 1-Gb/s optical receiver in 1-μm CMOS technology

2001 ◽  
Vol 13 (7) ◽  
pp. 711-713 ◽  
Author(s):  
H. Zimmermann ◽  
T. Heide
Keyword(s):  
Cmos Technology ◽  
Optical Receiver ◽  
Monolithically Integrated

High-speed monolithically integrated silicon optical receiver fabricated in 130-nm CMOS technology

2002 ◽  
Vol 14 (4) ◽  
pp. 516-518 ◽  
Author(s):  
S.M. Csutak ◽  
J.D. Schaub ◽  
W.E. Wu ◽  
J.C. Campbell
Keyword(s):  
High Speed ◽  
Cmos Technology ◽  
Optical Receiver ◽  
Monolithically Integrated

scholarly journals A Tunable-Gain Transimpedance Amplifier for CMOS-MEMS Resonators Characterization

Micromachines ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 82
Author(s):  
Rafel Perelló-Roig ◽  
Jaume Verd ◽  
Sebastià Bota ◽  
Jaume Segura
Keyword(s):  
Cmos Technology ◽  
Open Loop ◽  
Transimpedance Amplifier ◽  
Mems Devices ◽  
Monolithically Integrated ◽  
Mems Resonators ◽  
Electromechanical Performance ◽  
Cmos Mems ◽  
Promising Solution ◽  
On Chip

CMOS-MEMS resonators have become a promising solution thanks to their miniaturization and on-chip integration capabilities. However, using a CMOS technology to fabricate microelectromechanical system (MEMS) devices limits the electromechanical performance otherwise achieved by specific technologies, requiring a challenging readout circuitry. This paper presents a transimpedance amplifier (TIA) fabricated using a commercial 0.35-µm CMOS technology specifically oriented to drive and sense monolithically integrated CMOS-MEMS resonators up to 50 MHz with a tunable transimpedance gain ranging from 112 dB to 121 dB. The output voltage noise is as low as 225 nV/Hz1/2—input-referred current noise of 192 fA/Hz1/2—at 10 MHz, and the power consumption is kept below 1-mW. In addition, the TIA amplifier exhibits an open-loop gain independent of the parasitic input capacitance—mostly associated with the MEMS layout—representing an advantage in MEMS testing compared to other alternatives such as Pierce oscillator schemes. The work presented includes the characterization of three types of MEMS resonators that have been fabricated and experimentally characterized both in open-loop and self-sustained configurations using the integrated TIA amplifier. The experimental characterization includes an accurate extraction of the electromechanical parameters for the three fabricated structures that enables an accurate MEMS-CMOS circuitry co-design.

Towards Monolithically Integrated SiGe Optical Receiver with an All-Silicon Photodetector

2021 ◽  
Author(s):  
Bahaa Radi ◽  
Mahadi Masnad ◽  
Jose Garcia Echeverria ◽  
Glenn Cowan ◽  
Odile Liboiron-Ladouceur
Keyword(s):  
Optical Receiver ◽  
Monolithically Integrated ◽  
Silicon Photodetector

scholarly journals Fabrication of a CMOS-based Imaging Chip with Monolithically Integrated RGB and NIR Filters

Proceedings ◽  
2019 ◽  
Vol 2 (13) ◽  
pp. 751
Author(s):  
Bart Vereecke ◽  
Els Van Besien ◽  
Deniz Sabuncuoglu Tezcan ◽  
Nick Spooren ◽  
Nicolaas Tack ◽  
...  
Keyword(s):  
Bandpass Filter ◽  
Imaging System ◽  
Low Cost ◽  
Cmos Technology ◽  
Image Sensors ◽  
Single Chip ◽  
Interference Filters ◽  
Monolithically Integrated ◽  
Recent Developments

Recent developments in multispectral cameras have demonstrated how compact and low-cost spectral sensors can be made by monolithically integrating filters on top of commercially available image sensors. In this paper, the fabrication of a RGB + NIR variation to such a single-chip imaging system is described, including the integration of a metallic shield to minimize crosstalk, and two interference filters: a NIR blocking filter, and a NIR bandpass filter. This is then combined with standard polymer based RGB colour filters. Fabrication of this chip is done in imec’s 200 mm cleanroom using standard CMOS technology, except for the addition of RGB colour filters and microlenses, which is outsourced.

scholarly journals Impact of Fluid Flow on CMOS-MEMS Resonators Oriented to Gas Sensing

Sensors ◽  
2020 ◽  
Vol 20 (17) ◽  
pp. 4663
Author(s):  
Rafel Perello-Roig ◽  
Jaume Verd ◽  
Sebastià Bota ◽  
Jaume Segura
Keyword(s):  
Fluid Flow ◽  
Gas Sensing ◽  
Low Cost ◽  
Cmos Technology ◽  
Monolithically Integrated ◽  
Impact Reduction ◽  
Mems Resonators ◽  
Cmos Mems ◽  
Outstanding Result ◽  
The Impact

Based on experimental data, this paper thoroughly investigates the impact of a gas fluid flow on the behavior of a MEMS resonator specifically oriented to gas sensing. It is demonstrated that the gas stream action itself modifies the device resonance frequency in a way that depends on the resonator clamp shape with a corresponding non-negligible impact on the gravimetric sensor resolution. Results indicate that such an effect must be accounted when designing MEMS resonators with potential applications in the detection of volatile organic compounds (VOCs). In addition, the impact of thermal perturbations was also investigated. Two types of four-anchored CMOS-MEMS plate resonators were designed and fabricated: one with straight anchors, while the other was sustained through folded flexure clamps. The mechanical structures were monolithically integrated together with an embedded readout amplifier to operate as a self-sustained fully integrated oscillator on a commercial CMOS technology, featuring low-cost batch production and easy integration. The folded flexure anchor resonator provided a flow impact reduction of 5× compared to the straight anchor resonator, while the temperature sensitivity was enhanced to −115 ppm/°C, an outstanding result compared to the −2403 ppm/°C measured for the straight anchored structure.

scholarly journals A 45 nm CMOS Avalanche Photodiode with 8.4-GHz Bandwidth

Micromachines ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 65
Author(s):  
Wenhao Zhi ◽  
Qingxiao Quan ◽  
Pingping Yu ◽  
Yanfeng Jiang
Keyword(s):  
Optical Communication ◽  
Integrated Circuit ◽  
Communication Systems ◽  
Complementary Metal Oxide Semiconductor ◽  
Avalanche Photodiode ◽  
Cmos Technology ◽  
Optical Signal ◽  
Oxide Semiconductor ◽  
Monolithically Integrated ◽  
Process Modification

Photodiode is one of the key components in optoelectronic technology, which is used to convert optical signal into electrical ones in modern communication systems. In this paper, an avalanche photodiode (APD) is designed and fulfilled, which is compatible with Taiwan Semiconductor Manufacturing Company (TSMC) 45-nm standard complementary metal–oxide–semiconductor (CMOS) technology without any process modification. The APD based on 45 nm process is beneficial to realize a smaller and more complex monolithically integrated optoelectronic chip. The fabricated CMOS APD operates at 850 nm wavelength optical communication. Its bandwidth can be as high as 8.4 GHz with 0.56 A/W responsivity at reverse bias of 20.8 V. Its active area is designed to be 20 × 20 μm2. The Simulation Program with Integrated Circuit Emphasis (SPICE) model of the APD is also proposed and verified. The key parameters are extracted based on its electrical, optical and frequency responses by parameter fitting. The device has wide potential application for optical communication systems.

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