High-temperature characteristic in 1.3-/spl mu/m-range highly strained GaInNAs ridge stripe lasers grown by metal-organic chemical vapor deposition

1999 ◽  
Vol 11 (12) ◽  
pp. 1560-1562 ◽  
Author(s):  
S. Sato ◽  
S. Satoh
Keyword(s):  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Temperature Characteristic ◽  
Organic Chemical ◽  
Metal Organic ◽  
Highly Strained ◽  
Organic Chemical Vapor Deposition

Growth optimization for high quality GaN films grown by metal-organic chemical vapor deposition

2008 ◽  
Vol 1068 ◽  
Author(s):  
Jung Hun Jang ◽  
A M Herrero ◽  
Seungyoung Son ◽  
B Gila ◽  
C Abernathy ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
High Temperature ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Crystalline Quality ◽  
Organic Chemical ◽  
Nucleation Layer ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTGaN layers were grown on c-plane sapphire substrates by using a conventional two step growth method via metal organic chemical vapor deposition (MOCVD). The effect of different growth conditions used in the deposition of the low temperature nucleation layer and high temperature islands on the crystalline quality of the GaN layers was investigated by high resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM). The polar (tilt) and azimuthal (twist) spread were estimated from the full width at half maximum (FWHM) values of the omega rocking curves (¥ø-RCs) recorded from the planes parallel and perpendicular to the sample surface. It was found from the XRD and TEM study that the edge and mixed type threading dislocations are dominant defects so that the relevant figure of merit (FOM) for the crystalline quality should be considered only by the FWHM value of ¥ø-RC of the surface perpendicular plane. The result showed that the mixed- and edge-types dislocations were strongly associated with the growth conditions used in the deposition of the nucleation layer and high temperature islands.

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