A 980 nm pseudomorphic single quantum well laser for pumping erbium-doped optical fiber amplifiers

1990 ◽  
Vol 2 (8) ◽  
pp. 540-542 ◽  
Author(s):  
A. Larsson ◽  
S. Forouhar ◽  
J. Cody ◽  
R.J. Lang ◽  
P.A. Andrekson
Keyword(s):  
Quantum Well ◽  
Optical Fiber ◽  
Fiber Amplifiers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Laser ◽  
Erbium Doped ◽  
Optical Fiber Amplifiers

(InAs)1/(GaAs)n Superlattice Quantum Well Lasers

1992 ◽  
Vol 281 ◽  
Author(s):  
J. Lopata ◽  
N. K. Dutta ◽  
Naresh chand
Keyword(s):  
Low Temperature ◽  
Active Region ◽  
Quantum Well ◽  
Fiber Amplifiers ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Short Period ◽  
Erbium Doped ◽  
Random Alloy

Strained layer In0.2Ga0.8As/GaAs quantum-well (QW) lasers have been used to pump Erbium Doped Fiber Amplifiers for use in opto-electronic communication systems. These InGaAs/GaAs Q-W lasers grown as graded index separate confinement heterostructures (GRINSCH) emit at 980 nm and have exhibited low threshold current densities, high electrical to optical power conversion efficiencies, low noise, and low temperature sensitivities [1–3]. Recently there has been much attention toward the growth and fabrication of devices containing short period superlattices of (InAs)m/(GaAs)m or (GaAs)m/(AlAs)n compositions [4–9]. Indeed the growth of inverted MODFET structures using a (GaAs)/(AlAs) superlattice barrier in place of an AlGaAs random alloy exhibited an increase in low temperature mobility due to reductions in the number of impurities and interface roughness [7]]. Can the optical properties of strained layer InGaAs/GaAs Q-W lasers also be improved by growing an (InAs)/(GaAs)4 short period superlattice as the active layer in place of the In0.2Ga0.8 As random alloy?This paper reports the fabrication of ridge waveguide lasers using a 6 period (InAs)1/(GaAs)4 superlattice active region in a GRINSCH laser structure. One period of the superlattice consists of 1 monolayer (ML) of InAs and 4 ML of GaAs. Thus the average In composition in the superlattice is 20%. This superlattice laser is an alternative to the In0.2Ga0.8As/GaAs random alloy quantum-well laser used as a pump source for Erbium Doped Fiber Amplifiers. In a single quantum well In0.2Ga0.8As/GaAs laser the active region is a thin layer (-70Å thick) sandwiched between GaAs barrier layers. The superlattice active laser reported here has 6 periods of (InAs)1/(GaAs)4 as the light emitting region of a total width comparable to a single quantum well of random alloy composition.

(InAs)1/(GaAs)2short period superlattice strained single quantum well laser on GaAs substrate

1993 ◽  
Vol 29 (1) ◽  
pp. 98-99 ◽  
Author(s):  
H. Kurakake ◽  
T. Uchida ◽  
H. Soda ◽  
S. Yamazaki
Keyword(s):  
Quantum Well ◽  
Gaas Substrate ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Laser

Single-quantum-well laser with 11.2 degree transverse beam divergence

1990 ◽  
Vol 26 (17) ◽  
pp. 1348 ◽  
Author(s):  
Y.C. Chen ◽  
R.G. Waters ◽  
R.J. Dalby
Keyword(s):  
Quantum Well ◽  
Beam Divergence ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Transverse Beam ◽  
Quantum Well Laser

AlGaInP single quantum well laser diodes

1995 ◽  
Author(s):  
David P. Bour ◽  
David W. Treat ◽  
K. J. Beernink ◽  
Ross D. Bringans
Keyword(s):  
Quantum Well ◽  
Laser Diodes ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Laser

Picosecond pulse generation in a GaAs/GaAlAs single-quantum-well laser at the first and second subband transition

1992 ◽  
Vol 4 (9) ◽  
pp. 966-969 ◽  
Author(s):  
W. Elsasser ◽  
J. Sacher ◽  
F. Hackenbuchner ◽  
M. Hofmann ◽  
E.O. Gobel ◽  
...  
Keyword(s):  
Quantum Well ◽  
Picosecond Pulse ◽  
Pulse Generation ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Laser
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