Enhanced carrier injection efficiency from lateral current injection in multiple-quantum-well DFB lasers

1996 ◽  
Vol 8 (6) ◽  
pp. 749-751 ◽  
Author(s):  
A. Champagne ◽  
R. Maciejko ◽  
T. Makino
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Current Injection ◽  
Multiple Quantum ◽  
Carrier Injection ◽  
Injection Efficiency ◽  
Lateral Current

Carrier injection modulated by V-defects in InGaN/GaN multiple-quantum-well blue LEDs

2014 ◽  
Vol 53 (11) ◽  
pp. 112103 ◽  
Author(s):  
Yufeng Li ◽  
Feng Yun ◽  
Xilin Su ◽  
Shuo Liu ◽  
Wen Ding ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Carrier Injection

Efficient charge carrier injection into sub-250 nm AlGaN multiple quantum well light emitting diodes

2014 ◽  
Vol 105 (5) ◽  
pp. 051113 ◽  
Author(s):  
Frank Mehnke ◽  
Christian Kuhn ◽  
Martin Guttmann ◽  
Christoph Reich ◽  
Tim Kolbe ◽  
...  
Keyword(s):  
Charge Carrier ◽  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Carrier Injection ◽  
Light Emitting ◽  
Efficient Charge ◽  
Charge Carrier Injection

scholarly journals III-Nitride Multi-Quantum-Well Light Emitting Structures with Selective Carrier Injection

2019 ◽  
Vol 9 (18) ◽  
pp. 3872
Author(s):  
Hussein S. El-Ghoroury ◽  
Mikhail V. Kisin ◽  
Chih-Li Chuang
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Quantum Wells ◽  
Light Emitting Diode ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Carrier Injection ◽  
Light Emitting ◽  
Efficient Control ◽  
Multi Quantum Well

Incorporation into the multi-layered active region of a semiconductor light-emitting structure specially designed intermediate carrier blocking layers (IBLs) allows efficient control over the carrier injection distribution across the structure’s active region to match the application-driven device injection characteristics. This approach has been successfully applied to control the color characteristics of monolithic multi-color light-emitting diodes (LEDs). We further exemplify the method’s versatility by demonstrating the IBL design of III-nitride multiple-quantum-well (MQW) light-emitting diode with active quantum wells uniformly populated at LED operational current.

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