Narrow-beam and power-penalty-free 1.3-/spl mu/m laser diodes with monolithically integrated waveguide lens formed by selective-area epitaxial growth

1996 ◽  
Vol 8 (3) ◽  
pp. 325-327 ◽  
Author(s):  
A. Takemoto ◽  
Y. Miyazaki ◽  
K. Shibata ◽  
K. Matsumoto ◽  
Y. Hisa ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Laser Diodes ◽  
Narrow Beam ◽  
Power Penalty ◽  
Monolithically Integrated ◽  
Selective Area

Selective-area MOCVD growth for 1.3 μm laser diodes with a monolithically integrated waveguide lens

1997 ◽  
Vol 170 (1-4) ◽  
pp. 705-709 ◽  
Author(s):  
T. Takiguchi ◽  
T. Itagaki ◽  
M. Takemi ◽  
A. Takemoto ◽  
Y. Miyazaki ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Monolithically Integrated ◽  
Mocvd Growth ◽  
Selective Area

scholarly journals Development of an Epitaxial Growth Technique Using III-V on a Si Platform for Heterogeneous Integration of Membrane Photonic Devices on Si

2021 ◽  
Vol 11 (4) ◽  
pp. 1801
Author(s):  
Takuro Fujii ◽  
Tatsurou Hiraki ◽  
Takuma Aihara ◽  
Hidetaka Nishi ◽  
Koji Takeda ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Epitaxial Growth ◽  
Heterogeneous Integration ◽  
Selective Area Growth ◽  
Si Substrate ◽  
Growth Technique ◽  
Si Photonics ◽  
Selective Area ◽  
Area Growth ◽  
Indium Gallium

The rapid increase in total transmission capacity within and between data centers requires the construction of low-cost, high-capacity optical transmitters. Since a tremendous number of transmitters are required, photonic integrated circuits (PICs) using Si photonics technology enabling the integration of various functional devices on a single chip is a promising solution. A limitation of a Si-based PIC is the lack of an efficient light source due to the indirect bandgap of Si; therefore, hybrid integration technology of III-V semiconductor lasers on Si is desirable. The major challenges are that heterogeneous integration of III-V materials on Si induces the formation of dislocation at high process temperature; thus, the epitaxial regrowth process is difficult to apply. This paper reviews the evaluations conducted on our epitaxial growth technique using a directly bonded III-V membrane layer on a Si substrate. This technique enables epitaxial growth without the fundamental difficulties associated with lattice mismatch or anti-phase boundaries. In addition, crystal degradation correlating with the difference in thermal expansion is eliminated by keeping the total III-V layer thickness thinner than ~350 nm. As a result, various III-V photonic-device-fabrication technologies, such as buried regrowth, butt-joint regrowth, and selective area growth, can be applicable on the Si-photonics platform. We demonstrated the growth of indium-gallium-aluminum arsenide (InGaAlAs) multi-quantum wells (MQWs) and fabrication of lasers that exhibit >25 Gbit/s direct modulation with low energy cost. In addition, selective-area growth that enables the full O-band bandgap control of the MQW layer over the 150-nm range was demonstrated. We also fabricated indium-gallium-arsenide phosphide (InGaAsP) based phase modulators integrated with a distributed feedback laser. Therefore, the directly bonded III-V-on-Si substrate platform paves the way to manufacturing hybrid PICs for future data-center networks.

Selective-Area Growth of III-Nitride Core-Shell Nanowalls for Light-Emitting and Laser Diodes

CLEO: 2014 ◽  
2014 ◽  
Author(s):  
Ashwin K. Rishinaramangalam ◽  
Michael N. Fairchild ◽  
Saadat M. Ul Masabih ◽  
Darryl M. Shima ◽  
Ganesh Balakrishnan ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Core Shell ◽  
Selective Area Growth ◽  
Light Emitting ◽  
Selective Area ◽  
Area Growth

MOMBE: superior epitaxial growth for InP-based monolithically integrated photonic circuits

2000 ◽  
Vol 209 (2-3) ◽  
pp. 463-470 ◽  
Author(s):  
R Gibis ◽  
H Kizuki ◽  
P Albrecht ◽  
P Harde ◽  
G Urmann ◽  
...  
Keyword(s):  
Epitaxial Growth ◽  
Photonic Circuits ◽  
Monolithically Integrated

Monolithically Integrated III-Sb-Based Laser Diodes Grown on Miscut Si Substrates

2009 ◽  
Vol 15 (3) ◽  
pp. 716-723 ◽  
Author(s):  
J. Tatebayashi ◽  
A. Jallipalli ◽  
M.N. Kutty ◽  
Shenghong Huang ◽  
K. Nunna ◽  
...  
Keyword(s):  
Laser Diodes ◽  
Monolithically Integrated ◽  
Si Substrates

Monolithically Integrated Dual-Wavelength Self-Sustained Pulsating Laser Diodes with Real Refractive Index Guided Self-Aligned Structure

2001 ◽  
Vol 40 (Part 1, No. 11) ◽  
pp. 6401-6405 ◽  
Author(s):  
Toshikazu Onishi ◽  
Osamu Imafuji ◽  
Toshiya Fukuhisa ◽  
Atsunori Mochida ◽  
Yasuhiro Kobayashi ◽  
...  
Keyword(s):  
Refractive Index ◽  
Laser Diodes ◽  
Dual Wavelength ◽  
Monolithically Integrated ◽  
Real Refractive Index
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