Frequency locking of 1.5 mu m DFB laser diode to a neon indicator lamp using the optogalvanic effect

1989 ◽  
Vol 1 (10) ◽  
pp. 285-287 ◽  
Author(s):  
S.G. Menocal ◽  
N. Andreadakis ◽  
J.S. Patel ◽  
J. Werner ◽  
C.E. Zah ◽  
...  
Keyword(s):  
Laser Diode ◽  
Frequency Locking ◽  
Optogalvanic Effect ◽  
Indicator Lamp ◽  
Dfb Laser

A new DFB-laser diode with reduced spatial hole burning

1990 ◽  
Vol 2 (6) ◽  
pp. 388-390 ◽  
Author(s):  
G. Morthier ◽  
K. David ◽  
P. Vankwikelberge ◽  
R. Baets
Keyword(s):  
Laser Diode ◽  
Hole Burning ◽  
Spatial Hole Burning ◽  
Dfb Laser

Generation of Microwave Signals by Optical Heterodyning Technique Using a Multimode Laser Diode and a Tunable DFB Laser

2021 ◽  
Author(s):  
Blaise Tshibangu-Mbuebue ◽  
Min Won Lee ◽  
Roberto Rojas-Laguna ◽  
Ignacio Enrique Zaldivar-Huerta
Keyword(s):  
Laser Diode ◽  
Multimode Laser ◽  
Microwave Signals ◽  
Dfb Laser ◽  
Multimode Laser Diode

A fiber bragg grating acceleration sensor interrogated by a DFB laser diode

Laser Physics ◽  
2009 ◽  
Vol 19 (1) ◽  
pp. 134-137 ◽  
Author(s):  
J. Chang ◽  
Q. Wang ◽  
X. Zhang ◽  
D. Huo ◽  
L. Ma ◽  
...  
Keyword(s):  
Fiber Bragg Grating ◽  
Laser Diode ◽  
Bragg Grating ◽  
Acceleration Sensor ◽  
Dfb Laser

The effect of grating structure on relative intensity noise in DFB laser diode

2004 ◽  
Author(s):  
Ebrahim Mortazy ◽  
Fatemeh Shahshahani ◽  
Vahid Ahmadi ◽  
Amirhossein Tehranchi ◽  
Mohammad K. Moravvej-Farshi
Keyword(s):  
Laser Diode ◽  
Relative Intensity ◽  
Relative Intensity Noise ◽  
Intensity Noise ◽  
Grating Structure ◽  
Dfb Laser

MONOLITHIC INTEGRATION OF DFB LASERS AND ELECTROABSORPTION MODULATORS USING IN-PLANE QUANTUM ENERGY CONTROL OF MQW STRUCTURES

1994 ◽  
Vol 05 (01) ◽  
pp. 67-90 ◽  
Author(s):  
MASAHIRO AOKI ◽  
MAKOTO SUZUKI ◽  
HIROHISA SANO ◽  
SHINYA SASAKI ◽  
TOSHIHIRO KAWANO ◽  
...  
Keyword(s):  
Quantum Well ◽  
Laser Diode ◽  
Crystal Quality ◽  
Optical Modulator ◽  
Optical Fiber Communications ◽  
Integration Scheme ◽  
Energy Control ◽  
Quantum Energy ◽  
Dfb Laser ◽  
Waveguide Coupling

This paper describes the fabrication and characteristics of a new multiple-quantum-well (MQW) integrated distributed feedback (DFB) laser diode-electroabsorption (EA) optical modulator for use as the transmitter light source in multigigabit, long-distance optical fiber communications. The device employed a novel integration scheme for active/passive waveguide coupling achieved by controlling the quantum energy of selectively grown MQW structures. This new fabrication technique for photonic integrated circuits (PICs) facilitates smooth, high-quality waveguide coupling between the interconnected guided-wave elements. It is based on the growth rate enhancement or compositional changes in the material of the quantum-well layer grown by selective-area metalorganic vapor phase epitaxy (MOVPE). Good local quantum energy control within a very wide range is shown for simultaneously grown MQW crystals. Moreover, the crystal quality, well/barrier heterointerface, and flatness and uniformity of these selectively grown MQW crystals are found to be as good as those of normally grown crystals. This technique is applied to an MQW integrated DFB laser diode-EA modulator. Superior device performance, including a low threshold and highly efficient lasing properties, as well as high-speed, low-drive-voltage, and low-chirp modulator characteristics are attained due to improved optical coupling, easy fabrication, and sufficient crystal quality of selectively grown MQW structures. 10 Gbit/s data transmission is demonstrated over a 500 km dispersion-shifted single-mode fiber. This combined with long-term device reliability, makes this integration technique more attractive for practical fabrication of semiconductor PICs.

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