Gain-coupled distributed-feedback GaInAs-GaAs laser structures defined by maskless patterning with focused ion beams

1995 ◽  
Vol 7 (8) ◽  
pp. 845-847 ◽  
Author(s):  
A. Orth ◽  
J.P. Reithmaier ◽  
F. Faller ◽  
A. Forchel
Keyword(s):  
Ion Beams ◽  
Distributed Feedback ◽  
Focused Ion Beams ◽  
Gaas Laser ◽  
Maskless Patterning

Recent Advances in The Application of Focused Ion Beams

1985 ◽  
Vol 45 ◽  
Author(s):  
Kenji Gamo ◽  
Susumu Namba
Keyword(s):  
Ion Implantation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Ion Beam Modification ◽  
Chemical Effects ◽  
Recent Advances ◽  
Maskless Patterning

Recent advances of focused ion beam systems and their applications are presented. The applications include maskless ion implantation and various maskless patterning techniques which make use of ion induced chemical effects. These are ion beam assisted etching, deposition and ion beam modification techniques and are promising to improve patterning speed and extend applications of focused ion beams.

Maskless Patterning of Cr Films Using Focused Ion Beams

1983 ◽  
Vol 27 ◽  
Author(s):  
K. Gamo ◽  
K. Moriizumi ◽  
T. Matsui ◽  
S. Namba
Keyword(s):  
Ion Implantation ◽  
Plasma Etching ◽  
Etching Rate ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Latent Image ◽  
Sharp Threshold ◽  
Patterning Technique ◽  
Resistant Layer ◽  
Maskless Patterning

ABSTRACTCharacteristics of maskless patterning of Cr films using focused Sb+ ion implantation have been investigated. Dose and depth dependence of the etching rate of Sb-implanted layers during plasma etching using CCl4 were measured. Sb profiles were also measured by Rutherford backscattering techniques. It was found that a sharp threshold dose exists to form an etch-resistant layer by Sb implantation. It was also found that a latent image of an Sb implanted pattern at a dose ≥3.8×1015/cm2 was developed by the plasma etching, and that Cr patterns with a thickness of a few hundred nanometers were formed by the present maskless patterning technique.

Characteristics of Al maskless patterning using focused ion beams

1985 ◽  
Vol 7-8 ◽  
pp. 864-868 ◽  
Author(s):  
Kenji Gamo ◽  
Ge Huang ◽  
Kouichi Moriizumi ◽  
Norihiko Samoto ◽  
Ryuichi Shimizu ◽  
...  
Keyword(s):  
Ion Beams ◽  
Focused Ion Beams ◽  
Maskless Patterning

Preparation of TEM samples by focused ion beams

1995 ◽  
Vol 53 ◽  
pp. 518-519
Author(s):  
John F. Walker ◽  
J C Reiner ◽  
C Solenthaler
Keyword(s):  
Integrated Circuit ◽  
Polycrystalline Silicon ◽  
Field Effect Transistor ◽  
High Spatial Resolution ◽  
Ion Beam ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
Precise Location ◽  
Effect Transistor ◽  
Circuit Technology

The high spatial resolution available from TEM can be used with great advantage in the field of microelectronics to identify problems associated with the continually shrinking geometries of integrated circuit technology. In many cases the location of the problem can be the most problematic element of sample preparation. Focused ion beams (FIB) have previously been used to prepare TEM specimens, but not including using the ion beam imaging capabilities to locate a buried feature of interest. Here we describe how a defect has been located using the ability of a FIB to both mill a section and to search for a defect whose precise location is unknown. The defect is known from electrical leakage measurements to be a break in the gate oxide of a field effect transistor. The gate is a square of polycrystalline silicon, approximately 1μm×1μm, on a silicon dioxide barrier which is about 17nm thick. The break in the oxide can occur anywhere within that square and is expected to be less than 100nm in diameter.

scholarly journals Low-temperature charge transport in Ga-acceptor nanowires implanted by focused-ion beams

2007 ◽  
Vol 91 (12) ◽  
pp. 122105 ◽  
Author(s):  
S. J. Robinson ◽  
C. L. Perkins ◽  
T.-C. Shen ◽  
J. R. Tucker ◽  
T. Schenkel ◽  
...  
Keyword(s):  
Low Temperature ◽  
Charge Transport ◽  
Ion Beams ◽  
Focused Ion Beams

Direct‐Writing of 2D Diodes by Focused Ion Beams

2021 ◽  
pp. 2102708
Author(s):  
Yanran Liu ◽  
Yuanyuan Qu ◽  
Yue Liu ◽  
Hang Yin ◽  
Jinglun Liu ◽  
...  
Keyword(s):  
Ion Beams ◽  
Focused Ion Beams ◽  
Direct Writing

scholarly journals Grazing-incidence X-ray diffraction of single GaAs nanowires at locations defined by focused ion beams

2013 ◽  
Vol 46 (4) ◽  
pp. 887-892 ◽  
Author(s):  
Genziana Bussone ◽  
Rüdiger Schott ◽  
Andreas Biermanns ◽  
Anton Davydok ◽  
Dirk Reuter ◽  
...  
Keyword(s):  
Gaas Substrate ◽  
Lattice Spacing ◽  
Molecular Beam ◽  
Grazing Incidence ◽  
Lattice Parameter ◽  
Ion Beams ◽  
Focused Ion Beams ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gaas Nanowires

Grazing-incidence X-ray diffraction measurements on single GaAs nanowires (NWs) grown on a (111)-oriented GaAs substrate by molecular beam epitaxy are reported. The positions of the NWs are intentionally determined by a direct implantation of Au with focused ion beams. This controlled arrangement in combination with a nanofocused X-ray beam allows the in-plane lattice parameter of single NWs to be probed, which is not possible for randomly grown NWs. Reciprocal space maps were collected at different heights along the NW to investigate the crystal structure. Simultaneously, substrate areas with different distances from the Au-implantation spots below the NWs were probed. Around the NWs, the data revealed a 0.4% decrease in the lattice spacing in the substrate compared with the expected unstrained value. This suggests the presence of a compressed region due to Au implantation.

Nano-fabrication with focused ion beams

2001 ◽  
Vol 57-58 ◽  
pp. 865-875 ◽  
Author(s):  
J Gierak ◽  
D Mailly ◽  
G Faini ◽  
J.L Pelouard ◽  
P Denk ◽  
...  
Keyword(s):  
Ion Beams ◽  
Focused Ion Beams ◽  
Nano Fabrication
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