Characterization of thin p-clad InGaAs single-quantum-well lasers

C.H. Wu; P.S. Zory; M.A. Emanuel

doi:10.1109/68.393184

Characterization of thin p-clad InGaAs single-quantum-well lasers

IEEE Photonics Technology Letters ◽

10.1109/68.393184 ◽

1995 ◽

Vol 7 (7) ◽

pp. 718-720 ◽

Cited By ~ 15

Author(s):

C.H. Wu ◽

P.S. Zory ◽

M.A. Emanuel

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well

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Growth and characterization of low threshold, continuous-wave-operated ridge waveguide strained layer InGaAs/GaAs single-quantum-well lasers

Materials Science and Engineering B ◽

10.1016/0921-5107(91)90200-f ◽

1991 ◽

Vol 9 (1-3) ◽

pp. 351-354 ◽

Cited By ~ 1

Author(s):

B. Saint-Cricq ◽

S. Bonnefont ◽

F. Lozes-Dupuy ◽

H. Martinot ◽

R. Azoulay ◽

...

Keyword(s):

Quantum Well ◽

Continuous Wave ◽

Ridge Waveguide ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Strained Layer ◽

Low Threshold

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Visible AlGaAs single quantum well lasers with low threshold current density grown by molecular beam epitaxy

Electronics Letters ◽

10.1049/el:19880364 ◽

1988 ◽

Vol 24 (9) ◽

pp. 537

Author(s):

B. Saint-Cricq ◽

F. Chatenoud ◽

F. Lozes-Dupuy ◽

S. Fourtine ◽

H. Martinot

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Current Density ◽

Molecular Beam ◽

Threshold Current ◽

Threshold Current Density ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Low Threshold

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Low-threshold 1.3-/spl mu/m InGaAsN:Sb-GaAs single-quantum-well lasers grown by molecular beam epitaxy

IEEE Photonics Technology Letters ◽

10.1109/68.823492 ◽

2000 ◽

Vol 12 (2) ◽

pp. 128-130 ◽

Cited By ~ 7

Author(s):

X. Yang ◽

J.B. Heroux ◽

M.J. Jurkovic ◽

W.I. Wang

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Low Threshold

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Narrow stripe graded barrier single quantum well lasers-threshold current considerations

IEEE Journal of Quantum Electronics ◽

10.1109/jqe.1987.1073457 ◽

1987 ◽

Vol 23 (6) ◽

pp. 988-992 ◽

Cited By ~ 11

Author(s):

N. Patel ◽

T. Mattos ◽

F. Prince ◽

A. Nunes

Keyword(s):

Quantum Well ◽

Threshold Current ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Narrow Stripe

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Surface photo-voltage characterization of GaAs/AlGaAs single quantum well laser structures grown by molecular beam epitaxy

Semiconductor Science and Technology ◽

10.1088/0268-1242/29/3/035002 ◽

2014 ◽

Vol 29 (3) ◽

pp. 035002 ◽

Cited By ~ 1

Author(s):

R Muralidharan ◽

V Ramesh ◽

Puspashree Mishra ◽

T Srinivasan

Keyword(s):

Molecular Beam Epitaxy ◽

Quantum Well ◽

Molecular Beam ◽

Single Quantum ◽

Single Quantum Well ◽

Quantum Well Laser

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Carrier Leakage Effects in GaAsP/AlGaAs Single-Quantum-Well Lasers Determined by Hydrostatic Pressure Measurements

physica status solidi (b) ◽

10.1002/(sici)1521-3951(199901)211:1<533::aid-pssb533>3.0.co;2-# ◽

1999 ◽

Vol 211 (1) ◽

pp. 533-538 ◽

Cited By ~ 7

Author(s):

H. Page ◽

A.T. Meney ◽

A.R. Adams ◽

C.J. van der Poel

Keyword(s):

Hydrostatic Pressure ◽

Quantum Well ◽

Quantum Well Lasers ◽

Pressure Measurements ◽

Single Quantum ◽

Single Quantum Well

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IVB-2 facet-coated graded-index separate-confinement-heterostructure single-quantum-well lasers having low degradation rates (<1%/kh) at 70°C

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1983.21382 ◽

1983 ◽

Vol 30 (11) ◽

pp. 1592-1593

Author(s):

R.D. Dupuis ◽

R.L. Hartman ◽

F.R. Nash

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Graded Index ◽

Degradation Rates

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High-speed operation of single-quantum-well lasers with large gain compression

IEEE Photonics Technology Letters ◽

10.1109/68.122334 ◽

1992 ◽

Vol 4 (2) ◽

pp. 118-120 ◽

Cited By ~ 8

Author(s):

K.Y. Lau ◽

N. Bar-Chaim

Keyword(s):

Quantum Well ◽

High Speed ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Gain Compression ◽

Large Gain

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Emission spectra of single quantum well lasers with inhomogeneous current injection

Journal of Applied Physics ◽

10.1063/1.341911 ◽

1988 ◽

Vol 64 (3) ◽

pp. 1022-1026 ◽

Cited By ~ 12

Author(s):

Yasunori Tokuda ◽

Yuji Abe ◽

Teruhito Matsui ◽

Kyozo Kanamoto ◽

Noriaki Tsukada ◽

...

Keyword(s):

Quantum Well ◽

Emission Spectra ◽

Current Injection ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well

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Nonparabolicity effects on carrier lifetimes in bulk Hg1-xCdxTe alloys and Mid-Infrared 2D Hg1-xCdxTe/CdTe Single Quantum Well Lasers

Superlattices and Microstructures ◽

10.1016/j.spmi.2020.106780 ◽

2021 ◽

Vol 150 ◽

pp. 106780

Author(s):

F.Z. Mami ◽

A. Kadri ◽

N. Mokdad ◽

K. Zitouni

Keyword(s):

Quantum Well ◽

Quantum Well Lasers ◽

Single Quantum ◽

Single Quantum Well ◽

Mid Infrared ◽

Carrier Lifetimes

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Characterization of thin p-clad InGaAs single-quantum-well lasers

Growth and characterization of low threshold, continuous-wave-operated ridge waveguide strained layer InGaAs/GaAs single-quantum-well lasers

Visible AlGaAs single quantum well lasers with low threshold current density grown by molecular beam epitaxy

Low-threshold 1.3-/spl mu/m InGaAsN:Sb-GaAs single-quantum-well lasers grown by molecular beam epitaxy

Narrow stripe graded barrier single quantum well lasers-threshold current considerations

Surface photo-voltage characterization of GaAs/AlGaAs single quantum well laser structures grown by molecular beam epitaxy

Carrier Leakage Effects in GaAsP/AlGaAs Single-Quantum-Well Lasers Determined by Hydrostatic Pressure Measurements

IVB-2 facet-coated graded-index separate-confinement-heterostructure single-quantum-well lasers having low degradation rates (&lt;1%/kh) at 70°C

High-speed operation of single-quantum-well lasers with large gain compression

Emission spectra of single quantum well lasers with inhomogeneous current injection

Nonparabolicity effects on carrier lifetimes in bulk Hg1-xCdxTe alloys and Mid-Infrared 2D Hg1-xCdxTe/CdTe Single Quantum Well Lasers

IVB-2 facet-coated graded-index separate-confinement-heterostructure single-quantum-well lasers having low degradation rates (<1%/kh) at 70°C