InGaAs-InP P-I (MQW)-N surface-normal electroabsorption modulators exhibiting better than 8:1 contrast ratio for 1.55-/spl mu/m applications grown by gas-source MBE

1994 ◽  
Vol 6 (12) ◽  
pp. 1439-1441 ◽  
Author(s):  
R.N. Pathak ◽  
K.W. Goossen ◽  
J.E. Cunningham ◽  
W.Y. Jan
Keyword(s):  
Contrast Ratio ◽  
Electroabsorption Modulators ◽  
Gas Source ◽  
Surface Normal ◽  
Gas Source Mbe ◽  
Better Than

CBED study of low-temperature InP grown by gas source MBE

1993 ◽  
Vol 51 ◽  
pp. 810-811
Author(s):  
R. Rajesh ◽  
M.J. Kim ◽  
J.S. Bow ◽  
R.W. Carpenter ◽  
G.N. Maracas
Keyword(s):  
Low Temperature ◽  
Second Phase ◽  
Material System ◽  
Ion Milling ◽  
Electrical Measurements ◽  
Gas Source ◽  
Structural And Electrical Properties ◽  
The One ◽  
Lt Inp ◽  
Gas Source Mbe

In our previous work on MBE grown low temperature (LT) InP, attempts had been made to understand the relationships between the structural and electrical properties of this material system. Electrical measurements had established an enhancement of the resistivity of the phosphorus-rich LT InP layers with annealing under a P2 flux, which was directly correlated with the presence of second-phase particles. Further investigations, however, have revealed the presence of two fundamentally different types of precipitates. The first type are the surface particles, essentially an artefact of argon ion milling and containing mostly pure indium. The second type and the one more important to the study are the dense precipitates in the bulk of the annealed layers. These are phosphorus-rich and are believed to contribute to the improvement in the resistivity of the material.The observation of metallic indium islands solely in the annealed LT layers warranted further study in order to better understand the exact reasons for their formation.

Highly strained photovoltaic dual-channel intersubband photodetectors grown by gas-source MBE

2013 ◽  
Vol 378 ◽  
pp. 607-610 ◽  
Author(s):  
Mikaela Elagin ◽  
P. Schulz ◽  
Mstislav Elagin ◽  
M.P. Semtsiv ◽  
H. Kirmse ◽  
...  
Keyword(s):  
Dual Channel ◽  
Gas Source ◽  
Highly Strained ◽  
Gas Source Mbe

AlxGa1−xAs‐AlAs quantum well surface‐normal electroabsorption modulators operating at visible wavelengths

1991 ◽  
Vol 59 (15) ◽  
pp. 1829-1831 ◽  
Author(s):  
K. W. Goossen ◽  
R. H. Yan ◽  
J. E. Cunningham ◽  
W. Y. Jan
Keyword(s):  
Quantum Well ◽  
Electroabsorption Modulators ◽  
Surface Normal ◽  
Visible Wavelengths

Gas source MBE growth of GaN rich side of GaN1 − xPx using ion-removed ECR radical cell

1997 ◽  
Vol 175-176 ◽  
pp. 150-155 ◽  
Author(s):  
K. Iwata ◽  
H. Asahi ◽  
K. Asami ◽  
S. Gonda
Keyword(s):  
Mbe Growth ◽  
Gas Source ◽  
Gas Source Mbe ◽  
Rich Side

Structural Defects in GaN Epilayers Grown by Gas Source Molecular Beam Epitaxy

1989 ◽  
Vol 162 ◽  
Author(s):  
Z. Sitar ◽  
M. J. Paisley ◽  
B. Yan ◽  
R. F. Davis
Keyword(s):  
Electron Cyclotron Resonance ◽  
Plasma Source ◽  
Structural Defects ◽  
Effusion Cell ◽  
Gas Source ◽  
Inversion Domain ◽  
Transmission Electron ◽  
Gas Source Mbe ◽  
Inversion Domain Boundaries ◽  
Resonance Plasma

ABSTRACTSingle crystal cubic or hexagonal GaN thin films have been grown on various substrates, using a modified gas source MBE technique. A standard effusion cell was employed for the evaporation of gallium. A compact electron cyclotron resonance plasma source was used to activate the nitrogen prior to deposition. The films were examined by transmission electron microscopy. The major defects in the wurtzite GaN were double positioning boundaries, inversion domain boundaries, and dislocations. The zinc-blende GaN showed microtwins, stacking faults, and dislocations. The connection between the observed structural defects and the poor electrical properties of GaN is noted.

Electrical characteristics of Si/ × B/Si(111) structures by gas-source MBE

1996 ◽  
pp. 105-108
Author(s):  
Hiroshi Uji ◽  
Satoshi Tatsukawa ◽  
Satoru Matsumoto ◽  
Hirofumi Higuchi
Keyword(s):  
Electrical Characteristics ◽  
Gas Source ◽  
Gas Source Mbe
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