1.55-μm polarization-insensitive optical amplifier with strain-balanced superlattice active layer

1995 ◽  
Vol 7 (5) ◽  
pp. 473-475 ◽  
Author(s):  
A. Godefroy ◽  
A. Le Corre ◽  
F. Clerot ◽  
S. Salaun ◽  
S. Loualiche ◽  
...  
Keyword(s):  
Active Layer ◽  
Optical Amplifier ◽  
Polarization Insensitive

Polarization-insensitive four-wave mixing in a semiconductor optical amplifier

1998 ◽  
Vol 72 (21) ◽  
pp. 2651-2653 ◽  
Author(s):  
A. Mecozzi ◽  
G. Contestabile ◽  
L. Graziani ◽  
F. Martelli ◽  
A. D’Ottavi ◽  
...  
Keyword(s):  
Semiconductor Optical Amplifier ◽  
Optical Amplifier ◽  
Four Wave Mixing ◽  
Wave Mixing ◽  
Polarization Insensitive

1.3 μm AlGaInAs-InP POLARIZATION-INSENSITIVE SEMICONDUCTOR OPTICAL AMPLIFIER WITH TENSILE STRAINED WELLS GROWN BY MOVPE

2003 ◽  
Vol 02 (03) ◽  
pp. 119-123
Author(s):  
HONG MA ◽  
XINJIAN YI ◽  
SIHAI CHEN
Keyword(s):  
Semiconductor Optical Amplifier ◽  
Entire Range ◽  
Multiple Quantum Well ◽  
Optical Amplifier ◽  
Ridge Waveguide ◽  
Bias Current ◽  
Waveguide Structure ◽  
Multiple Quantum ◽  
Material System ◽  
Polarization Insensitive

We demonstrate a polarization-insensitive multiple-quantum-well optical amplifer for 1.3 μm wavelength in AlGaInAs-InP material system, using three tensile strained wells with strain of 0.36% in the active region. The amplifiers were fabricated forming ridge waveguide structure, which showed excellent polarization insensitivity (less than 0.6 dB) over the entire range of wavelength (1.28 μm ~ 1.34 μm) and a gain of 22.5 dB at the bias current of 200 mA and 1304 nm wavelength.

Novel polarization-insensitive semiconductor optical amplifier structure with large 3dB bandwidth

2001 ◽  
Author(s):  
Ruiying Zhang ◽  
Jie Dong ◽  
Fan Zhou ◽  
Hongliang Zhu ◽  
H. Y. Shu ◽  
...  
Keyword(s):  
Semiconductor Optical Amplifier ◽  
Optical Amplifier ◽  
Polarization Insensitive
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