scholarly journals MQW tuned semiconductor lasers with uniform frequency response

1994 ◽  
Vol 6 (4) ◽  
pp. 496-498 ◽  
Author(s):  
B. Cai ◽  
A.J. Seeds ◽  
J.S. Roberts
Keyword(s):  
Frequency Response ◽  
Semiconductor Lasers

Measurement of intrinsic frequency response of semiconductor lasers using optical modulation

1988 ◽  
Vol 24 (18) ◽  
pp. 1131 ◽  
Author(s):  
C.H. Lange ◽  
J. Eom ◽  
C.B. Su ◽  
J. Schlafer ◽  
R.B. Lauer
Keyword(s):  
Frequency Response ◽  
Semiconductor Lasers ◽  
Optical Modulation ◽  
Intrinsic Frequency

Frequency response of 1.3µm InGaAsP high speed semiconductor lasers

1987 ◽  
Vol 23 (9) ◽  
pp. 1410-1418 ◽  
Author(s):  
R. Olshansky ◽  
P. Hill ◽  
V. Lanzisera ◽  
W. Powazinik
Keyword(s):  
Frequency Response ◽  
Semiconductor Lasers ◽  
High Speed

Observation of multipeak frequency response of GaAs-AlGaAs DH semiconductor lasers

1977 ◽  
Vol 65 (9) ◽  
pp. 1413-1414
Author(s):  
H. Kuwahara ◽  
Y. Daido ◽  
H. Furuta ◽  
H. Nishi
Keyword(s):  
Frequency Response ◽  
Semiconductor Lasers

scholarly journals Modulation Performance Enhancement of Directly Modulated Injection-Locked Semiconductor Lasers Using an Equivalent Electrical Circuit

Electronics ◽  
2021 ◽  
Vol 10 (19) ◽  
pp. 2409
Author(s):  
Ho-Jun Bae ◽  
Jun-Hyung Cho ◽  
Hyuk-Kee Sung
Keyword(s):  
Frequency Response ◽  
Semiconductor Lasers ◽  
Integrated Circuit ◽  
Performance Enhancement ◽  
Damping Ratio ◽  
Relaxation Oscillation ◽  
Electrical Circuit ◽  
Equivalent Electrical Circuit ◽  
Direct Modulation ◽  
Locking Range

We propose an equivalent electrical circuit model to evaluate the direct modulation performance of optically injection-locked (OIL) semiconductor lasers. We modeled the equivalent circuit of the OIL laser based on alternating complex envelope representations, simulated it using the Simulation Program with Integrated Circuit Emphasis (SPICE), and analyzed the frequency response of the OIL laser. Although the frequency response of the OIL laser is better than that of a free-running laser, its 3-dB modulation performance is degraded by the relaxation oscillation that occurs during direct modulation of the semiconductor laser. To overcome this limitation and maintain the maximum modulation performance within the entire locking range, we also designed an electrical filter to preprocess the electrical modulation signal and compensate for the non-flat modulation output of the OIL laser. The damping ratio of the directly modulated OIL laser increased by 0.101 (280%) and its settling time decreased by >0.037 (44%) when the electrical compensation circuit was added, exhibiting a flat 3-dB modulation bandwidth of 28.79 GHz.

Theoretical model of frequency response of carrier and lattice temperatures with nonequilibrium optical phonons in semiconductor lasers

1998 ◽  
Vol 34 (24) ◽  
pp. 2337
Author(s):  
Chin-Yi Tsai ◽  
Chih-Hsiung Chen ◽  
Tien-Li Sung ◽  
Chin-Yao Tsai ◽  
J.M. Rorison
Keyword(s):  
Theoretical Model ◽  
Frequency Response ◽  
Semiconductor Lasers ◽  
Optical Phonons

Structural aspects of silicon diffusion in quaternary III-V thin-film semiconductors

1991 ◽  
Vol 49 ◽  
pp. 850-851
Author(s):  
F. A. Ponce ◽  
R. L. Thornton ◽  
G. B. Anderson
Keyword(s):  
Semiconductor Lasers ◽  
Wide Bandgap ◽  
Semiconductor Diode ◽  
Visible Range ◽  
P System ◽  
Misfit Dislocations ◽  
Lattice Match ◽  
Semiconductor Diode Laser ◽  
Thin Film Semiconductors ◽  
Silicon Diffusion

The InGaAlP quaternary system allows the production of semiconductor lasers emitting light in the visible range of the spectrum. Recent advances in the visible semiconductor diode laser art have established the viability of diode structures with emission wavelengths comparable to the He-Ne gas laser. There has been much interest in the growth of wide bandgap quaternary thin films on GaAs, a substrate most commonly used in optoelectronic applications. There is particular interest in compositions which are lattice matched to GaAs, thus avoiding misfit dislocations which can be detrimental to the lifetime of these materials. As observed in Figure 1, the (AlxGa1-x)0.5In0.5P system has a very close lattice match to GaAs and is favored for these applications.In this work, we have studied the effect of silicon diffusion in GaAs/InGaAlP structures. Silicon diffusion in III-V semiconductor alloys has been found to have an disordering effect which is associated with removal of fine structures introduced during growth. Due to the variety of species available for interdiffusion, the disordering effect of silicon can have severe consequences on the lattice match at GaAs/InGaAlP interfaces.

Strain measurement in In0.2Ga0.8As/GaAs quantum wires by convergent beam electron diffraction

1995 ◽  
Vol 53 ◽  
pp. 444-445
Author(s):  
S. Hillyard ◽  
Y.-P. Chen ◽  
J.D. Reed ◽  
W.J. Schaff ◽  
L.F. Eastman ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Semiconductor Lasers ◽  
Quantum Wire ◽  
Quantum Wires ◽  
Convergent Beam Electron Diffraction ◽  
Zero Order ◽  
Beam Electron ◽  
Local Lattice ◽  
Device Applications ◽  
Convergent Beam

The positions of high-order Laue zone (HOLZ) lines in the zero order disc of convergent beam electron diffraction (CBED) patterns are extremely sensitive to local lattice parameters. With proper care, these can be measured to a level of one part in 104 in nanometer sized areas. Recent upgrades to the Cornell UHV STEM have made energy filtered CBED possible with a slow scan CCD, and this technique has been applied to the measurement of strain in In0.2Ga0.8 As wires.Semiconductor quantum wire structures have attracted much interest for potential device applications. For example, semiconductor lasers with quantum wires should exhibit an improvement in performance over quantum well counterparts. Strained quantum wires are expected to have even better performance. However, not much is known about the true behavior of strain in actual structures, a parameter critical to their performance.

{10} edge dislocations in YSZ films grown on (100)MgO by PLD

1994 ◽  
Vol 52 ◽  
pp. 530-531
Author(s):  
Jason R. Heffelfinger ◽  
C. Barry Carter
Keyword(s):  
Thin Films ◽  
Semiconductor Lasers ◽  
Vapor Deposition ◽  
Substrate Surface ◽  
Laser System ◽  
Average Energy ◽  
Target Material ◽  
Chemical Vapor ◽  
Buffer Layers ◽  
Organic Chemical

Yttria-stabilized zirconia (YSZ) is currently used in a variety of applications including oxygen sensors, fuel cells, coatings for semiconductor lasers, and buffer layers for high-temperature superconducting films. Thin films of YSZ have been grown by metal-organic chemical vapor deposition, electrochemical vapor deposition, pulse-laser deposition (PLD), electron-beam evaporation, and sputtering. In this investigation, PLD was used to grow thin films of YSZ on (100) MgO substrates. This system proves to be an interesting example of relationships between interfaces and extrinsic dislocations in thin films of YSZ.In this experiment, a freshly cleaved (100) MgO substrate surface was prepared for deposition by cleaving a lmm-thick slice from a single-crystal MgO cube. The YSZ target material which contained 10mol% yttria was prepared from powders and sintered to 85% of theoretical density. The laser system used for the depositions was a Lambda Physik 210i excimer laser operating with KrF (λ=248nm, 1Hz repetition rate, average energy per pulse of 100mJ).

A Unified Approach to Study the Thermal Dynamics in Multilongitudinal Mode Semiconductor Lasers

2001 ◽  
Vol 20 (2) ◽  
pp. 159-169 ◽  
Author(s):  
M. Ganesh Madhan ◽  
P. R. Vaya ◽  
N. Gunasekaran
Keyword(s):  
Semiconductor Lasers ◽  
Unified Approach ◽  
Thermal Dynamics
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