Cross-correlation measurement of the turn-on delay and pulsewidth of a Q-switched two-section semiconductor laser

1993 ◽  
Vol 5 (12) ◽  
pp. 1365-1368 ◽  
Author(s):  
Sheng-Hui Yang ◽  
B.J. Thedrez ◽  
S.E. Saddow ◽  
C. Wood ◽  
R. Wilson ◽  
...  
Keyword(s):  
Semiconductor Laser ◽  
Cross Correlation ◽  
Correlation Measurement ◽  
Turn On

Experimental observation of time jitter in semiconductor laser turn‐on

1988 ◽  
Vol 52 (26) ◽  
pp. 2203-2204 ◽  
Author(s):  
P. Spano ◽  
A. D’Ottavi ◽  
A. Mecozzi ◽  
B. Daino
Keyword(s):  
Semiconductor Laser ◽  
Experimental Observation ◽  
Time Jitter ◽  
Turn On

Cross-correlation measurement of quantum shot noise using homemade transimpedance amplifiers

2014 ◽  
Vol 85 (5) ◽  
pp. 054704 ◽  
Author(s):  
Masayuki Hashisaka ◽  
Tomoaki Ota ◽  
Masakazu Yamagishi ◽  
Toshimasa Fujisawa ◽  
Koji Muraki
Keyword(s):  
Shot Noise ◽  
Cross Correlation ◽  
Correlation Measurement ◽  
Transimpedance Amplifiers

Passage time statistics in semiconductor laser turn on

1988 ◽  
Vol 38 (6) ◽  
pp. 3136-3138 ◽  
Author(s):  
A. Mecozzi ◽  
S. Piazzolla ◽  
A. D'Ottavi ◽  
P. Spano
Keyword(s):  
Semiconductor Laser ◽  
Passage Time ◽  
Turn On

Temperature dependence of turn-on time delay of semiconductor laser diode: Theoretical analysis

2010 ◽  
Vol 18 (4) ◽  
Author(s):  
M.S. Ab Rahman ◽  
M.R. Hassan
Keyword(s):  
Time Delay ◽  
Temperature Dependence ◽  
Semiconductor Laser ◽  
Laser Diode ◽  
Communication Systems ◽  
Recombination Coefficient ◽  
Turn On ◽  
Proposed Model ◽  
Wide Range ◽  
Dc Bias

AbstractTemperature dependence of the turn-on time delay (ton) of uncooled semiconductor laser diodes biased below and above threshold is analyzed in presence of data pattern effect. We show that even when the laser is biased at or slightly above threshold, the increase in temperature of operation will lead to increase in the threshold carrier (Nth) and consequently the laser diode will be biased below the threshold again and a significant value of ton will be produced. Thus, knowledge about a value of dc-bias current required to achieve zero ton within wide range of temperature degrees is important when considering uncooled laser diode in high-speed optical communication systems. The temperature dependence of ton is calculated according to the temperature dependence of Nth and Auger recombination coefficient (C) and not by the well-know exponentional relationship of threshold current with temperature. The temperature dependence of Nth is calculated according to the temperature dependence of laser cavity parameters. Advanced analytical model is derived in term of carrier density, recombination coefficients and the injection current (Iinj). The validity of proposed model is confirmed by a numerical method. In addition, approximated models are included where under specified assumptions the proposed model reduces to the well-known approximate models of ton. According to our typical values and at a specified value of modulation current, the dc-bias one (Iib) should be increased from Iib = Ith to Iib ≈ 1.25 and 1.5Ith in order to achieve approximately zero ton when the temperature increases from 25°C to 55°C and 85°C, respectively.

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