Low-voltage-tunable distributed Bragg reflector using InGaAs/GaAs quantum wells

1993 ◽  
Vol 5 (6) ◽  
pp. 695-697 ◽  
Author(s):  
O. Blum ◽  
J.E. Zucker ◽  
X. Wu ◽  
K.H. Gulden ◽  
H. Sohn ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Low Voltage ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector

scholarly journals Вертикально-излучающие лазеры спектрального диапазона 1.55 mum, сформированные методом спекания

2018 ◽  
Vol 44 (1) ◽  
pp. 59
Author(s):  
А.В. Бабичев ◽  
Л.Я. Карачинский ◽  
И.И. Новиков ◽  
А.Г. Гладышев ◽  
С.А. Блохин ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Modulation Frequency ◽  
Cutoff Frequency ◽  
Optical Power ◽  
Single Mode ◽  
Threshold Current ◽  
Bragg Reflector ◽  
Cavity Surface ◽  
Distributed Bragg Reflector ◽  
Aperture Diameter

AbstractThe results of studies on fabrication of vertical-cavity surface-emitting 1.55-μm lasers by fusing AlGaAs/GaAs distributed-Bragg-reflector wafers and an active region based on thin In_0.74Ga_0.26 As quantum wells grown by molecular-beam epitaxy are presented. Lasers with a current aperture diameter of 8 μm exhibit continuous lasing with a threshold current below 1.5 mA, an output optical power of 6 mW, and an efficiency of approximately 22%. Single-mode lasing with a side-mode suppression ratio of 40–45 dB is observed in the entire operating current range. The effective modulation frequency of these lasers is as high as 9 GHz and is limited by the low parasitic cutoff frequency and self-heating.

Low Voltage Operation of Polymer Light-Emitting Device with Conducting Polymer Distributed Bragg Reflector

1999 ◽  
Vol 598 ◽  
Author(s):  
Takeo Kawase ◽  
Peter K. H. Ho ◽  
Richard H. Friend ◽  
Tatsuya Shimoda
Keyword(s):  
Conducting Polymer ◽  
Low Voltage ◽  
Green Light ◽  
Space Charge Density ◽  
Bragg Reflector ◽  
Field Region ◽  
Distributed Bragg Reflector ◽  
Light Emitting ◽  
Emissive Layer ◽  
Low Field

ABSTRACTPolymer light-emitting devices with a conducting polymer distributed Bragg reflector (DBR) are reported. Polymer DBRs were formed from alternate spin-coating of poly (3,4-ethylenedioxythiophene) (PEDOT) doped with poly(styrenesulphonate) (PSS) as the low-index layer and a hole-transporting polyfluorene derivative as the high-index layer onto ITO deposited glass substrates. The polymer DBR with 5 periods showed reflectivity of 40% at the wavelength of 560nm. Onto this polymer DBR, a green-light-emitting polyfluorene was spin-coated to give the emissive layer and Ca/Al was deposited to form the cathode served another reflector. These LEDs operated successfully at low voltages and emitted light having a narrower spectrum (FWHM=47nm) than structures without the DBR (FWHM=102nm). The peak wavelengths varied corresponding to the thickness of the emissive layer, that is, the cavity length as expected from calculations. The luminance turn-on voltage of the LED with the polymer DBR is 2V, which is the same as LEDs without a DBR. The current was found to be limited by injection in the low field region and limited by space charge density at high fields. The current does not depend on the number of layers in the DBR in the low field region, and this implies that there are no effective energy barriers in the polymer DBR.

Electrically tunable group delays using quantum wells in a distributed Bragg reflector

1999 ◽  
Author(s):  
Thomas R. Nelson, Jr. ◽  
John P. Loehr ◽  
Qianghua Xie ◽  
James E. Ehret ◽  
Joseph E. Van Nostrand ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Group Delays

A 1.6-μm widely tunable distributed Bragg reflector laser diode based on InGaAs/InGaAsP quantum-wells material

2021 ◽  
pp. 127201
Author(s):  
Hongyan Yu ◽  
Mengqi Wang ◽  
Daibing Zhou ◽  
Xuliang Zhou ◽  
Pengfei Wang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Laser Diode ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector

scholarly journals A Widely Tunable Three-Section DBR Lasers for Multi-Species Gas Detection

2021 ◽  
Vol 11 (6) ◽  
pp. 2618
Author(s):  
Hongyan Yu ◽  
Jiaoqing Pan ◽  
Xuliang Zhou ◽  
Hui Wang ◽  
Liang Xie ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Gas Sensing ◽  
Butt Joint ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Mode Suppression ◽  
Potential Capacity ◽  
Temperature Tuning ◽  
Side Mode ◽  
Methane Detection

We demonstrate a widely tunable distributed Bragg reflector (DBR) laser operating at 1.8-µm, in which the DBR section was butt-jointed InGaAsP (λ = 1.45 μm) material. Through current and temperature tuning, a widely tuning range of over 11 nm with a side mode suppression ratio (SMSR) higher than 30 dB is obtained. Utilizing this DBR laser, the water and methane detection experiment has been successfully implemented, which illustrates the potential capacity of such DBR laser as the light source used for multispecies gas sensing. The work also illustrates that the butt-joint active-passive integration technology developed for the InGaAsP quantum-wells (QWs) can be successfully applied in the InGaAs QWs.

Nonlinear Optical Response in Coupled Quantum Wells Optomechanical microcavity

2021 ◽  
Author(s):  
Surabhi Yadav ◽  
Aranya Bhuti Bhattacherjee
Keyword(s):  
Quantum Wells ◽  
Cavity Mode ◽  
Optical Switch ◽  
Mean Field ◽  
Kerr Nonlinearity ◽  
Bragg Reflector ◽  
Field Analysis ◽  
Distributed Bragg Reflector ◽  
Coupled Quantum Wells ◽  
Induced Transparency

Abstract We investigate the optical properties of a hybrid solid-state optomechanical microcavity containing two coupled quantum wells interacting with the cavity mode in the presence of a third-order nonlinear medium and a mechanically compliant distributed Bragg reflector (MC-DBR). The MC-DBR interacts with the cavity mode via the nonlinear radiation pressure effect. The steady-state mean-field analysis shows the existence of optical bistability, which can be utilized to design all-optical tunable switches. The coupling between the two quantum wells, the interaction between the excitons and the optical mode, the Kerr nonlinearity, and the optomechanical interaction can be tuned to operate the optical switch at lower input laser power. The fluctuation dynamics demonstrate the presence of optomechanically induced transparency (OMIT) and optomechanically induced absorption (OMIA). We find that both OMIT and OMIA can be manipulated efficiently by optomechanical coupling strength and the quantum well tunneling rate.

Electro-optic low-voltage InGaAs/GaAs multiple quantum well modulator with organic–inorganic distributed Bragg reflector

1999 ◽  
Vol 25 (1-2) ◽  
pp. 313-317 ◽  
Author(s):  
M. De Vittorio ◽  
M. Lomascolo ◽  
A. Passaseo ◽  
R. Cingolani ◽  
A Convertino ◽  
...  
Keyword(s):  
Quantum Well ◽  
Low Voltage ◽  
Multiple Quantum Well ◽  
Bragg Reflector ◽  
Multiple Quantum ◽  
Distributed Bragg Reflector ◽  
Electro Optic

scholarly journals Asymmetric Ge/SiGe coupled quantum well modulators

Nanophotonics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 1765-1773
Author(s):  
Yi Zhang ◽  
Jianfeng Gao ◽  
Senbiao Qin ◽  
Ming Cheng ◽  
Kang Wang ◽  
...  
Keyword(s):  
Energy Consumption ◽  
Quantum Well ◽  
Quantum Wells ◽  
High Speed ◽  
Low Voltage ◽  
Extinction Ratio ◽  
High Frequency Response ◽  
Modulation Format ◽  
Silicon Photonic ◽  
Coupled Quantum Well

Abstract We design and demonstrate an asymmetric Ge/SiGe coupled quantum well (CQW) waveguide modulator for both intensity and phase modulation with a low bias voltage in silicon photonic integration. The asymmetric CQWs consisting of two quantum wells with different widths are employed as the active region to enhance the electro-optical characteristics of the device by controlling the coupling of the wave functions. The fabricated device can realize 5 dB extinction ratio at 1446 nm and 1.4 × 10−3 electrorefractive index variation at 1530 nm with the associated modulation efficiency V π L π of 0.055 V cm under 1 V reverse bias. The 3 dB bandwidth for high frequency response is 27 GHz under 1 V bias and the energy consumption per bit is less than 100 fJ/bit. The proposed device offers a pathway towards a low voltage, low energy consumption, high speed and compact modulator for silicon photonic integrated devices, as well as opens possibilities for achieving advanced modulation format in a more compact and simple frame.

Sign in / Sign up

Export Citation Format

Share Document