1.57 mu m strained-layer quantum-well GaInAlAs ridge-waveguide laser diodes with high temperature (130 degrees C) and ultrahigh-speed (17 GHz) performance

1993 ◽  
Vol 5 (6) ◽  
pp. 597-599 ◽  
Author(s):  
B. Stegmuller ◽  
B. Borchert ◽  
R. Gessner
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
Laser Diodes ◽  
Ridge Waveguide ◽  
Waveguide Laser ◽  
Strained Layer ◽  
Ridge Waveguide Laser

Multiple-quantum-well GaInNAs-GaNAs ridge-waveguide laser diodes operating out to 1.4 /spl mu/m

2002 ◽  
Vol 14 (5) ◽  
pp. 591-593 ◽  
Author(s):  
W. Ha ◽  
V. Gambin ◽  
M. Wistey ◽  
S. Bank ◽  
Seongsin Kim ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Ridge Waveguide ◽  
Multiple Quantum ◽  
Waveguide Laser ◽  
Ridge Waveguide Laser

Optimization of active region for 1.3-µm GalnAsP compressive-strain multiple-quantum-well ridge waveguide laser diodes

2006 ◽  
Vol 35 (2) ◽  
pp. 243-249 ◽  
Author(s):  
Po-Hsun Lei ◽  
Chyi-Dar Yang ◽  
Ming-Yuan Wu ◽  
Chih-Wei Hu ◽  
Meng-Chyi Wu ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Compressive Strain ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Ridge Waveguide ◽  
Multiple Quantum ◽  
Waveguide Laser ◽  
Ridge Waveguide Laser

High temperature operation of II-VI ridge-waveguide laser diodes

1998 ◽  
Vol 34 (21) ◽  
pp. 2032 ◽  
Author(s):  
M. Legge ◽  
S. Bader ◽  
G. Bacher ◽  
H.-J. Lugauer ◽  
A. Waag ◽  
...  
Keyword(s):  
High Temperature ◽  
Laser Diodes ◽  
Ridge Waveguide ◽  
Waveguide Laser ◽  
High Temperature Operation ◽  
Ridge Waveguide Laser
Sign in / Sign up

Export Citation Format

Share Document