Extremely low back facet feedback by quantum-confined Stark effect absorption in an edge-emitting light-emitting diode

1993 ◽  
Vol 5 (5) ◽  
pp. 509-511 ◽  
Author(s):  
J.E. Fouquet ◽  
W.V. Sorin ◽  
G.R. Trott ◽  
M.J. Ludowise ◽  
D.M. Braun
Keyword(s):  
Stark Effect ◽  
Light Emitting Diode ◽  
Low Back ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined

OPTICAL PROPERTIES OF GaInN/GaN MULTI-QUANTUM WELL STRUCTURE AND LIGHT EMITTING DIODE GROWN BY METALORGANIC CHEMICAL VAPOR PHASE EPITAXY

2007 ◽  
Vol 17 (01) ◽  
pp. 81-84
Author(s):  
J. Senawiratne ◽  
M. Zhu ◽  
W. Zhao ◽  
Y. Xia ◽  
Y. Li ◽  
...  
Keyword(s):  
Optical Properties ◽  
Quantum Well ◽  
Stark Effect ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Green Emission ◽  
Luminescence Spectroscopy ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Multi Quantum Well

Optical properties of green emission Ga 0.80 In 0.20 N/GaN multi-quantum well and light emitting diode have been investigated by using photoluminescence, cathodoluminescence, electroluminescence, and photoconductivity. The temperature dependent photoluminescence and cathodoluminescence studies show three emission bands including GaInN/GaN quantum well emission centered at 2.38 eV (~ 520 nm). The activation energy of the non-radiative recombination centers was found to be ~ 60 meV. The comparison of photoconductivity with luminescence spectroscopy revealed that optical properties of quantum well layers are strongly affected by the quantum-confined Stark effect.

Quantum-confined stark effect in localized luminescent centers within InGaN/GaN quantum-well based light emitting diodes

2012 ◽  
Vol 101 (12) ◽  
pp. 121919 ◽  
Author(s):  
Suman De ◽  
Arunasish Layek ◽  
Sukanya Bhattacharya ◽  
Dibyendu Kumar Das ◽  
Abdul Kadir ◽  
...  
Keyword(s):  
Quantum Well ◽  
Stark Effect ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined ◽  
Luminescent Centers

scholarly journals Role of quantum-confined stark effect on bias dependent photoluminescence of N-polar GaN/InGaN multi-quantum disk amber light emitting diodes

2018 ◽  
Vol 123 (10) ◽  
pp. 105702 ◽  
Author(s):  
Malleswararao Tangi ◽  
Pawan Mishra ◽  
Bilal Janjua ◽  
Aditya Prabaswara ◽  
Chao Zhao ◽  
...  
Keyword(s):  
Stark Effect ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Amber Light ◽  
Quantum Disk ◽  
Quantum Confined

Quantum-confined Stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes

2008 ◽  
Vol 41 (16) ◽  
pp. 165105 ◽  
Author(s):  
Hisashi Masui ◽  
Junichi Sonoda ◽  
Nathan Pfaff ◽  
Ingrid Koslow ◽  
Shuji Nakamura ◽  
...  
Keyword(s):  
Stark Effect ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Quantum Confined Stark Effect ◽  
Quantum Confined
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