Design considerations for a multiple-quantum-well nonresonant surface-normal modulator

1992 ◽  
Vol 4 (12) ◽  
pp. 1357-1360
Author(s):  
M.K. Chin
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Design Considerations ◽  
Surface Normal

Observation of gain in an optically pumped surface-normal multiple-quantum-well optical amplifier

1996 ◽  
Vol 21 (4) ◽  
pp. 269 ◽  
Author(s):  
Osamu Hanaizumi ◽  
Ki Tae Jeong ◽  
Shin-ya Kashiwada ◽  
Ibrahim Syuaib ◽  
Kenji Kawase ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Optical Amplifier ◽  
Multiple Quantum ◽  
Optically Pumped ◽  
Surface Normal

High-speed large-area surface-normal multiple quantum well modulators

2004 ◽  
Author(s):  
Peter G. Goetz ◽  
Rita Mahon ◽  
Todd H. Stievater ◽  
William S. Rabinovich ◽  
Steven C. Binari
Keyword(s):  
Quantum Well ◽  
High Speed ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Large Area ◽  
Surface Normal

RESONANT TUNNELING STUDIES OF VARIABLY SPACED MULTIPLE QUANTUM WELL STRUCTURES IN THE AlGaAs SYSTEM

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

Low-Temperature Operation of Green, Blue and UV InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes

2003 ◽  
Vol 764 ◽  
Author(s):  
X. A. Cao ◽  
S. F. LeBoeuf ◽  
J. L. Garrett ◽  
A. Ebong ◽  
L. B. Rowland ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Light Output ◽  
Localized States ◽  
Multiple Quantum ◽  
Nonradiative Recombination ◽  
Light Emitting ◽  
Temperature Range ◽  
Green Leds

Absract:Temperature-dependent electroluminescence (EL) of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with peak emission energies ranging from 2.3 eV (green) to 3.3 eV (UV) has been studied over a wide temperature range (5-300 K). As the temperature is decreased from 300 K to 150 K, the EL intensity increases in all devices due to reduced nonradiative recombination and improved carrier confinement. However, LED operation at lower temperatures (150-5 K) is a strong function of In ratio in the active layer. For the green LEDs, emission intensity increases monotonically in the whole temperature range, while for the blue and UV LEDs, a remarkable decrease of the light output was observed, accompanied by a large redshift of the peak energy. The discrepancy can be attributed to various amounts of localization states caused by In composition fluctuation in the QW active regions. Based on a rate equation analysis, we find that the densities of the localized states in the green LEDs are more than two orders of magnitude higher than that in the UV LED. The large number of localized states in the green LEDs are crucial to maintain high-efficiency carrier capture at low temperatures.

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