Low-threshold current low-voltage vertical-cavity surface-emitting lasers with low-Al-content p-type mirrors grown by MOCVD

1992 ◽  
Vol 4 (12) ◽  
pp. 1325-1327 ◽  
Author(s):  
T. Kawakami ◽  
Y. Kadota ◽  
Y. Kohama ◽  
T. Tadokoro
Keyword(s):  
Low Voltage ◽  
Threshold Current ◽  
Cavity Surface ◽  
Al Content ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Low Threshold ◽  
Emitting Lasers ◽  
P Type ◽  
Vertical Cavity

Single-mode low threshold current multi-hole vertical-cavity surface-emitting lasers

2012 ◽  
Vol 21 (3) ◽  
pp. 034206 ◽  
Author(s):  
Zhen-Bo Zhao ◽  
Chen Xu ◽  
Yi-Yang Xie ◽  
Kang Zhou ◽  
Fa Liu ◽  
...  
Keyword(s):  
Single Mode ◽  
Threshold Current ◽  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Low Threshold ◽  
Emitting Lasers ◽  
Vertical Cavity

Design Consideration of GaN-Based Surface Emitting Lasers

1996 ◽  
Vol 449 ◽  
Author(s):  
T. Honda ◽  
F. Koyama ◽  
K. Iga
Keyword(s):  
Threshold Current ◽  
Threshold Current Density ◽  
Cavity Surface ◽  
Design Consideration ◽  
Micro Fabrication ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Low Threshold ◽  
Emitting Lasers ◽  
Vertical Cavity

ABSTRACTThe threshold current density of GaN-based vertical cavity surface emitting lasers (VCSELs) has been estimated. It is clarified that the introduction of a quantum well structure as an active layer is very effective for a low threshold operation and that high reflective mirrors are required for low threshold GaN-based VCSELs. Also, attempts on micro-fabrication process of GaN is presented.

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